公开(公告)号：US07884950B2

公开(公告)日：2011-02-08

申请号：US12300135

申请日：2007-05-11

申请人： Heiko Weichert ,  Kunie Ogata ,  Tsuyoshi Shibata

发明人： Heiko Weichert ,  Kunie Ogata ,  Tsuyoshi Shibata

IPC分类号： G01B11/14 ,  G01B11/28

CPC分类号： G03F7/162 ,  G01B11/06 ,  G03F7/70533 ,  H01L22/12 ,  H01L22/20

摘要： In a pattern measuring unit installed in a coating and developing treatment system, the height of a pattern formed on a substrate is measured using the Scatterometry method. Based on the measured height of the pattern, an appropriate number of rotations of the substrate during application of a coating solution is calculated, so that the rotation of the substrate during the application is controlled by the calculated number of rotations of the substrate. Since the number of rotations of the substrate when the coating solution is applied to the substrate is controlled, it is unnecessary to stop the system which performs photolithography processing on the substrate, resulting in improved productivity of the substrate.

摘要翻译： 在安装在涂布和显影处理系统中的图案测量单元中，使用散射法测量形成在基底上的图案的高度。 基于所测量的图案的高度，计算在施加涂布溶液期间适当数量的基材的旋转，使得在施加期间基底的旋转由所计算的基底的旋转数量控制。 由于控制将涂布液施加到基板上时的基板的旋转次数，因此不需要在基板上停止进行光刻处理的系统，从而提高基板的生产率。

公开(公告)号：US20090181316A1

公开(公告)日：2009-07-16

申请号：US12300135

申请日：2007-05-11

申请人： Heiko Weichert ,  Kunie Ogata ,  Tsuyoshi Shibata

发明人： Heiko Weichert ,  Kunie Ogata ,  Tsuyoshi Shibata

IPC分类号： G03F7/20 ,  G03B27/32

CPC分类号： G03F7/162 ,  G01B11/06 ,  G03F7/70533 ,  H01L22/12 ,  H01L22/20

摘要： In a pattern measuring unit installed in a coating and developing treatment system, the height of a pattern formed on a substrate is measured using the Scatterometry method. Based on the measured height of the pattern, an appropriate number of rotations of the substrate during application of a coating solution is calculated, so that the rotation of the substrate during the application is controlled by the calculated number of rotations of the substrate. Since the number of rotations of the substrate when the coating solution is applied to the substrate is controlled, it is unnecessary to stop the system which performs photolithography processing on the substrate, resulting in improved productivity of the substrate.

摘要翻译： 在安装在涂布和显影处理系统中的图案测量单元中，使用散射法测量形成在基底上的图案的高度。 基于所测量的图案的高度，计算在施加涂布溶液期间适当数量的基材的旋转，使得在施加期间基底的旋转由所计算的基底的旋转数量来控制。 由于控制将涂布液施加到基板上时的基板的旋转次数，因此不需要在基板上停止进行光刻处理的系统，从而提高基板的生产率。

公开(公告)号：US20090104548A1

公开(公告)日：2009-04-23

申请号：US12065829

申请日：2006-09-13

申请人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

发明人： Michio Tanaka ,  Shinichi Shinozuka ,  Masahide Tadokoro ,  Kunie Ogata ,  Hiroshi Tomita ,  Ryoichi Uemura

IPC分类号： G03F7/20 ,  G03B27/52

CPC分类号： G03F7/40 ,  G03F7/38

摘要： A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

摘要翻译： 图案形成系统1包括检查装置400和控制部500.检查装置400被配置为测量并检查在显影处理之后形成在基板W上的抗蚀剂图案的侧壁角度SWA。 控制部500构成为使用显影处理后的抗蚀剂图案的侧壁角度SWA的目标值与由检查装置400获得的侧壁角度SWA的检查结果之间的差，来设定处理条件 第一加热过程71至74或第二加热过程84至89，以便在显影过程之后使侧壁角度SWA接近其目标值。

公开(公告)号：US20080074657A1

公开(公告)日：2008-03-27

申请号：US11856308

申请日：2007-09-17

申请人： Yoshihiro Kondo ,  Kunie Ogata ,  Shinichi Shinozuka

发明人： Yoshihiro Kondo ,  Kunie Ogata ,  Shinichi Shinozuka

IPC分类号： G01N21/00

CPC分类号： H01L21/67253 ,  H01L21/67248

摘要： In the present invention, for measurement of line widths, for example, at 36 locations within a substrate processed in a coating and developing treatment system, the 36 measurement points are divided and, for example, six substrates are used to measure the line widths at all of measurement points. In this event, the line widths at six measurement points are measured in each of the substrate, which exist in substrate regions different for each substrate. Then, the measurement results of the line widths at the measurement points of the substrates are combined, so that the line widths at 36 measurement points are finally detected. According to the present invention, the measurements of product substrates can be performed without decreasing the throughput of processing of the product substrates.

摘要翻译： 在本发明中，为了测量线宽度，例如在涂布和显影处理系统中处理的基板内的36个位置处，36个测量点被分割，并且例如使用六个基板来测量线宽 所有测量点。 在这种情况下，在每个衬底中测量六个测量点处的线宽度，每个衬底存在于对于每个衬底不同的衬底区域中。 然后，将基板的测定点的线宽度的测定结果合并，最终检测36个测定点的线宽。 根据本发明，可以在不降低产品基板的加工生产能力的情况下进行产品基板的测量。

公开(公告)号：US06541170B2

公开(公告)日：2003-04-01

申请号：US09883404

申请日：2001-06-19

申请人： Yuji Fukuda ,  Kunie Ogata

发明人： Yuji Fukuda ,  Kunie Ogata

IPC分类号： G03F900

CPC分类号： G03F7/70558 ,  G03F7/26 ,  Y10S134/902

摘要： Before forming a resist pattern, the light reflectivity of the undercoat of the wafer is measured by a reflectivity measuring unit. The conditions are controlled according to the measured reflectivity when forming the resist pattern. The conditions when forming the resist pattern are the rotation speed when supplying the resist solution while rotating the wafer inside the resist coating unit, the exposure time in the exposing unit, the developing time in the developing unit, and so forth. Thus, by controlling the conditions when forming the resist pattern according to the light reflectivity of the wafer's undercoat, a highly fine control of the line width of the resist pattern is made possible.

摘要翻译： 在形成抗蚀剂图案之前，通过反射率测量单元测量晶片的底涂层的光反射率。 当形成抗蚀剂图案时，根据所测量的反射率来控制条件。 形成抗蚀剂图案时的条件是当在抗蚀剂涂布单元内旋转晶片时提供抗蚀剂溶液时的转速，曝光单元中的曝光时间，显影单元中的显影时间等。 因此，通过根据晶片底涂层的光反射率控制形成抗蚀剂图案时的条件，可以高度精细地控制抗蚀剂图案的线宽。

公开(公告)号：US06266125B1

公开(公告)日：2001-07-24

申请号：US09317176

申请日：1999-05-24

申请人： Yuji Fukuda ,  Kunie Ogata

发明人： Yuji Fukuda ,  Kunie Ogata

IPC分类号： G03B2742

CPC分类号： G03F7/70558 ,  G03F7/26 ,  Y10S134/902

摘要： Before forming a resist pattern, the light reflectivity of the undercoat of the wafer is measured by a reflectivity measuring unit. The conditions are controlled according to the measured reflectivity when forming the resist pattern. The conditions when forming the resist pattern are the rotation speed when supplying the resist solution while rotating the wafer inside the resist coating unit, the exposure time in the exposing unit, the developing time in the developing unit, and so forth. Thus, by controlling the conditions when forming the resist pattern according to the light reflectivity of the wafer's undercoat, a highly fine control of the line width of the resist pattern is made possible.

摘要翻译： 在形成抗蚀剂图案之前，通过反射率测量单元测量晶片的底涂层的光反射率。 当形成抗蚀剂图案时，根据所测量的反射率来控制条件。 形成抗蚀剂图案时的条件是当在抗蚀剂涂布单元内旋转晶片时提供抗蚀剂溶液时的转速，曝光单元中的曝光时间，显影单元中的显影时间等。 因此，通过根据晶片底涂层的光反射率控制形成抗蚀剂图案时的条件，可以高度精细地控制抗蚀剂图案的线宽。

公开(公告)号：US5939130A

公开(公告)日：1999-08-17

申请号：US863427

申请日：1997-05-27

申请人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

发明人： Masatoshi Shiraishi ,  Yukio Kiba ,  Kunie Ogata

IPC分类号： B05C11/08 ,  B05D1/40 ,  G03F7/16 ,  H01L21/027 ,  B05D3/12

CPC分类号： G03F7/162

摘要： A coating film forming method for forming a resist coating film on an upper surface of a wafer held by a spin chuck in a chamber includes (a) the step of keeping preliminary correlation data representing correlation between a wafer rotating speed and the thickness of the resist coating film formed on the wafer in the chamber, (b) the step of conveying the wafer into the chamber and holding the wafer by the spin chuck, (c) the step of pouring the resist liquid onto the wafer and spin-rotating the wafer to form a resist coating film on the upper surface of the wafer, (d) the step of detecting the thickness of the formed resist coating film by a sensor, (e) the step of detecting a rotating speed of the spin chuck by a sensor, and (f) the step of, on the basis of the detected film thickness and the preliminary correlation data, correcting a set rotating speed of the spin chuck to feedback-control a resist coating process for a next wafer.

摘要翻译： 在由室内的旋转卡盘保持的晶片的上表面上形成抗蚀剂涂膜的涂膜形成方法包括：（a）保持表示晶片转速与抗蚀剂厚度之间的相关性的初步相关数据的步骤 （b）将晶片输送到室中并通过旋转卡盘保持晶片的步骤，（c）将抗蚀剂液体注入晶片并旋转晶片的步骤 在晶片的上表面形成抗蚀剂涂膜，（d）通过传感器检测形成的抗蚀剂涂膜的厚度的步骤，（e）通过传感器检测旋转卡盘的转速的步骤 ，以及（f）基于所检测的膜厚度和初步相关数据，校正旋转卡盘的设定转速以反馈控制下一个晶片的抗蚀剂涂覆处理的步骤。

公开(公告)号：US08308381B2

公开(公告)日：2012-11-13

申请号：US13103708

申请日：2011-05-09

申请人： Masahide Tadokoro ,  Kunie Ogata

发明人： Masahide Tadokoro ,  Kunie Ogata

IPC分类号： G03D5/00 ,  G03C5/00

CPC分类号： H01L21/32139 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The substrate processing system includes a measuring apparatus that measures any of film thickness, a refractive index, an absorption coefficient, and warpage. The system includes an apparatus for performing photolithography on the substrate to form a resist pattern and an etching apparatus that etches a processing film. A control unit includes a first relation between an initial condition and a dimension of the pattern of the processing film and a second relation between a processing condition of the predetermined processing and the dimension of the pattern of the processing film. The control unit estimates a dimension of the pattern of the processing film after the etching treatment from the first relation based on a measurement result and corrects the processing condition of the predetermined processing in the photolithography or the etching from the second relation based on an estimation result of the dimension of the pattern.

摘要翻译： 基板处理系统包括测量膜厚，折射率，吸收系数和翘曲中的任何一个的测量装置。 该系统包括用于在基板上进行光刻以形成抗蚀剂图案的装置和蚀刻处理膜的蚀刻装置。 控制单元包括处理膜的图案的初始状态和尺寸之间的第一关系以及预定处理的处理条件和处理膜的图案的尺寸之间的第二关系。 控制单元基于测量结果从第一关系估计​​蚀刻处理后的处理膜的图案的尺寸，并根据估计结果校正光刻中的预定处理或第二关系的蚀刻的处理条件 的图案尺寸。

公开(公告)号：US08041525B2

公开(公告)日：2011-10-18

申请号：US11856308

申请日：2007-09-17

申请人： Yoshihiro Kondo ,  Kunie Ogata ,  Shinichi Shinozuka

发明人： Yoshihiro Kondo ,  Kunie Ogata ,  Shinichi Shinozuka

IPC分类号： G01N21/00

CPC分类号： H01L21/67253 ,  H01L21/67248

摘要： In the present invention, for measurement of line widths, for example, at 36 locations within a substrate processed in a coating and developing treatment system, the 36 measurement points are divided and, for example, six substrates are used to measure the line widths at all of measurement points. In this event, the line widths at six measurement points are measured in each of the substrate, which exist in substrate regions different for each substrate. Then, the measurement results of the line widths at the measurement points of the substrates are combined, so that the line widths at 36 measurement points are finally detected. According to the present invention, the measurements of product substrates can be performed without decreasing the throughput of processing of the product substrates.

摘要翻译： 在本发明中，为了测量线宽度，例如在涂布和显影处理系统中处理的基板内的36个位置处，36个测量点被分割，并且例如使用六个基板来测量线宽 所有测量点。 在这种情况下，在每个衬底中测量六个测量点处的线宽度，每个衬底存在于对于每个衬底不同的衬底区域中。 然后，将基板的测定点的线宽度的测定结果合并，最终检测36个测定点的线宽。 根据本发明，可以在不降低产品基板的加工生产能力的情况下进行产品基板的测量。

公开(公告)号：US07897896B2

公开(公告)日：2011-03-01

申请号：US11875239

申请日：2007-10-19

申请人： Megumi Jyousaka ,  Shinichi Shinozuka ,  Kunie Ogata

发明人： Megumi Jyousaka ,  Shinichi Shinozuka ,  Kunie Ogata

IPC分类号： H05B1/02

CPC分类号： G05D23/1931 ,  H01L21/67248

摘要： In the present invention, a thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and, from an in-plane tendency of the measured line widths, an in-plane tendency improvable by temperature correction and an unimprovable in-plane tendency are calculated using a Zernike polynomial. An average remaining tendency of the improvable in-plane tendency after improvement obtained in advance is added to the unimprovable in-plane tendency to estimate an in-plane tendency of the line widths within the substrate after change of temperature setting.

摘要翻译： 在本发明中，加热单元的热板被分成多个热板区域，并且可以为每个热板区域设定温度。 可以对热板的每个热板区域设定用于调节热板内的温度的温度校正值。 测量经过光刻工艺的衬底内的线宽，并且根据所测量的线宽的面内趋势，通过温度校正提高的面内趋势和不可估量的面内趋势，使用 一个Zernike多项式。 将预先获得的改进后的面内趋势的平均剩余趋势加到不可估量的平面内趋势中，以估计在温度设定变化之后衬底内线宽的面内趋势。