公开(公告)号：US20060199372A1

公开(公告)日：2006-09-07

申请号：US11069514

申请日：2005-03-01

申请人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick Yu

发明人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick Yu

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

摘要翻译： 一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。 还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。 另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

公开(公告)号：US20050255690A1

公开(公告)日：2005-11-17

申请号：US11184431

申请日：2005-07-19

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

摘要翻译： 在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如 的Ta / TaN，通过底部和侧壁。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

公开(公告)号：US06660622B2

公开(公告)日：2003-12-09

申请号：US10290746

申请日：2002-11-07

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L213205

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

摘要翻译： 在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如 的Ta / TaN，通过底部和侧壁。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

公开(公告)号：US06498091B1

公开(公告)日：2002-12-24

申请号：US09704161

申请日：2000-11-01

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L214763

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.

摘要翻译： 在延伸穿过层间电介质层的通孔中形成势垒层的方法和结果。 TiSiN的第一阻挡层通过化学气相沉积保形地涂覆在通孔的底部和侧壁以及介电层顶部的场区中。 使用单个等离子体溅射反应器执行两个步骤。 在第一步骤中，用高能离子溅射晶片而不是靶，以从通孔的底部除去阻挡层，而不是从侧壁去除阻挡层。 在第二步骤中，例如Ta / TaN的第二阻挡层被溅射沉积到通孔底部和侧壁上。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。 可以控制第一步骤中的室内条件，包括平衡中性粒子和离子，以将第一阻挡层从通孔底部移除，同时将其留在暴露在场区域上。

公开(公告)号：US6110530A

公开(公告)日：2000-08-29

申请号：US339970

申请日：1999-06-25

申请人： Ling Chen ,  Seshadri Ganguli ,  Bo Zheng ,  Samuel Wilson ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Bo Zheng ,  Samuel Wilson ,  Christophe Marcadal

IPC分类号： C23C16/18 ,  C23C16/448

CPC分类号： C23C16/18 ,  C23C16/4485

摘要： Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

摘要翻译： 具有改善性能的铜膜通过化学气相沉积从六氟乙酰丙酮铜三甲基乙烯基硅烷铜共混物的有机铜前体和约1.0-5.0重量％的在汽化器中汽化的三甲基乙烯基硅烷沉积，并通入化学气相沉积室。 将高达约2重量％的水蒸汽的前体共混物直接加入到室中。

公开(公告)号：US07026238B2

公开(公告)日：2006-04-11

申请号：US10052681

申请日：2002-01-17

申请人： Ming Xi ,  Paul Frederick Smith ,  Ling Chen ,  Michael X. Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny C. Lin

发明人： Ming Xi ,  Paul Frederick Smith ,  Ling Chen ,  Michael X. Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny C. Lin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

公开(公告)号：US07244683B2

公开(公告)日：2007-07-17

申请号：US10741422

申请日：2003-12-19

申请人： Hua Chung ,  Nikolaos Bekiaris ,  Christophe Marcadal ,  Ling Chen

发明人： Hua Chung ,  Nikolaos Bekiaris ,  Christophe Marcadal ,  Ling Chen

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/02063 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76876

摘要： A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.

摘要翻译： 提供了一种处理衬底的方法。 该方法包括沉积和蚀刻基底上的低k电介质层，用等离子体预清洁衬底，以及在衬底上沉积阻挡层。 预清洁衬底使阻挡层向低k电介质层的扩散最小化和/或增强阻挡层的沉积。

公开(公告)号：US07832432B2

公开(公告)日：2010-11-16

申请号：US12500319

申请日：2009-07-09

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC分类号： F16K3/36 ,  F16K11/20

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

摘要翻译： 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以使入口管线和出口管线流体耦合或解耦。

公开(公告)号：US20090314370A1

公开(公告)日：2009-12-24

申请号：US12500314

申请日：2009-07-09

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert S. Chu

IPC分类号： F16K21/00

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

摘要翻译： 实施例涉及包含旁路管线和阀门的安瓿组件。 在一个实施例中，提供了安瓿组件，其包括与安瓿体连接并流体连通的入口和出口管线，连接在入口管线和出口管线之间并且包含设置在其中的旁通阀的旁通管线。 安瓿组件还包括设置在安瓿本体与旁通管线与入口管线的连接点之间的入口管线中的截止阀，设置在安瓿本体与连接点之间的出口管线中的截止阀 旁路管线和出口管路的另一截止阀，设置在安瓿主体与设置在入口管线上的断开配件之间的入口管线中的另一截止阀，以及设置在安瓿主体和 断开出口管路上的接头。

公开(公告)号：US20080041311A1

公开(公告)日：2008-02-21

申请号：US11925670

申请日：2007-10-26

申请人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert Chu

发明人： Norman Nakashima ,  Christophe Marcadal ,  Seshadri Ganguli ,  Paul Ma ,  Schubert Chu

IPC分类号： C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45561 ,  Y10T137/3127 ,  Y10T137/4259 ,  Y10T137/87249 ,  Y10T137/877

摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.

摘要翻译： 本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。 在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热 层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线 在入口管线和出口管线之间。 在一些实施例中，安瓿组件可以包含断开配件。 在其他实施例中，第一旁路管线具有设置在其中的截止阀，以便将输入管线和出口管线流体耦合或解耦。