公开(公告)号：US20130229883A1

公开(公告)日：2013-09-05

申请号：US13850502

申请日：2013-03-26

Applicant: Micron Technology, Inc.

Inventor： Michael S. Lane ,  Michael A. Shore

IPC: G11C29/04 ,  G11C7/06

CPC classification number: G11C29/04 ,  G11C7/06 ,  G11C29/808

Abstract: A memory with extra digit lines in full size end arrays with an open digit architecture, which can use the extra digit lines to form repair cells. In one example, folded digit sense amplifiers are connected to an end array with an open digit architecture such that each sense amplifier corresponds to a group of four digit lines. Two digit lines of the group connect to two open digit sense amplifiers and the other two digit lines connect to the corresponding folded digit sense amplifier. A repair method can be performed on memories including the end arrays with folded digit sense amplifiers. A row in a core array including a replaceable IO is activated and a row in an end array is activated. The repair cells in the end array can be sensed by the folded digit sense amplifiers to generate a replacement IO, which is selected rather than the replaceable IO.

Abstract translation: 具有开放数字体系结构的全尺寸终端阵列中的额外数字线的存储器，可以使用额外的数字线形成修复单元。 在一个示例中，折叠数字读出放大器连接到具有开放数字架构的端部阵列，使得每个读出放大器对应于一组四位数字线。 该组的两位数字线连接到两个开放数字读出放大器，另外两个数字线连接到相应的折叠数字读出放大器。 可以对包括具有折叠数字读出放大器的端阵列的存储器执行修复方法。 激活包含可替换IO的核心阵列中的一行，并激活末端阵列中的一行。 结束阵列中的修复单元可以被折叠的数字读出放大器感测以产生替换IO，而不是可更换的IO。