High temperature chemical vapor deposition apparatus
    38.
    发明申请
    High temperature chemical vapor deposition apparatus 审中-公开
    高温化学气相沉积装置

    公开(公告)号:US20060185591A1

    公开(公告)日:2006-08-24

    申请号:US11344854

    申请日:2006-02-01

    IPC分类号: C23C16/00

    摘要: Embodiments for an apparatus and method for depositing one or more layers onto a substrate or a freestanding shape inside a reaction chamber operating at a temperature of at least 700° C. and 100 torr are provided. The apparatus is provided with a feeding system having injection means for differential pre-reactions and/or pre-treating of a plurality of gases or gas mixtures, tailoring the distribution of a plurality of gas-phase species, yielding a deposit that is substantially uniform in thickness and chemical composition along the substrate surface. In one embodiment, the apparatus further comprises a sacrificial substrate that further helps achieving thickness and chemical uniformity on the substrate, by imitating a continuous surface to deposit on and thus preventing any disturbances in the flow pattern especially towards the edge of the substrate.

    摘要翻译: 提供了一种用于在至少700℃和100托的温度下操作的反应室内将一个或多个层沉积到基底或独立形状上的装置和方法的实施例。 该装置设置有具有用于差分预反应和/或预处理多种气体或气体混合物的注射装置的进料系统,调整多种气相物质的分布,产生基本均匀的沉积物 沿着基板表面的厚度和化学成分。 在一个实施例中,该设备还包括牺牲衬底,其进一步有助于实现衬底上的厚度和化学均匀性,通过模仿连续表面沉积在衬底上,从而防止流动图案中的任何干扰,特别是朝向衬底的边缘。