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    Method for forming micro cavity
    32.
    发明授权
    Method for forming micro cavity 有权
    微孔形成方法

    公开(公告)号：US06342427B1

    公开(公告)日：2002-01-29

    申请号：US09473968

    申请日：1999-12-29

    申请人： Chang Auck Choi ,  Chi Hoon Jun ,  Won Ick Jang ,  Yun Tae Kim

    发明人： Chang Auck Choi ,  Chi Hoon Jun ,  Won Ick Jang ,  Yun Tae Kim

    IPC分类号： H01L2100

    CPC分类号： B81C1/00047 ,  B81B2203/033 ,  B81C2201/0133 ,  B81C2201/0178 ,  B81C2203/0136

    摘要： A method for forming a micro cavity is disclosed. In the method for forming the cavity, a first layer is formed on a silicon layer and a trench is formed in the silicon layer by selectively etching the silicon layer. A second and a third layers are formed on the trench and on the silicon layer. Etching holes are formed through the third layer by partially etching the third layer. A cavity is formed between the silicon layer and the third layer after the second layer is removed through the etching holes. Therefore, the cavity having a large size can be easily formed and sealed in the silicon layer by utilizing the volume expansion of the silicon or the poly silicon layer. Also, a vacuum micro cavity can be formed according as a low vacuum CVD oxide layer or a nitride layer formed on the etching holes which are partially opened after the thermal oxidation process by controlling the size of the etching holes concerning the other portion of the poly silicon layer.

    摘要翻译： 公开了一种用于形成微腔的方法。 在形成空腔的方法中，在硅层上形成第一层，并且通过选择性地蚀刻硅层，在硅层中形成沟槽。 在沟槽和硅层上形成第二和第三层。 通过部分地蚀刻第三层，通过第三层形成蚀刻孔。 在通过蚀刻孔除去第二层之后，在硅层和第三层之间形成空穴。 因此，通过利用硅或多晶硅层的体积膨胀，可以容易地在硅层中形成并密封具有大尺寸的空腔。 此外，可以根据在热氧化处理后部分打开的蚀刻孔上形成的低真空CVD氧化物层或氮化物层，通过控制与聚合物的其它部分相关的蚀刻孔的尺寸，形成真空微腔 硅层。

    Tunable-wavelength optical filter and method of manufacturing the same
    33.
    再颁专利
    Tunable-wavelength optical filter and method of manufacturing the same 有权
    可调谐波长光学滤波器及其制造方法

    公开(公告)号：USRE44356E1

    公开(公告)日：2013-07-09

    申请号：US12828908

    申请日：2010-07-01

    申请人： Chang Auck Choi ,  Myung Lae Lee ,  Chang Kyu Kim ,  Chi Hoon Jun ,  Youn Tae Kim

    发明人： Chang Auck Choi ,  Myung Lae Lee ,  Chang Kyu Kim ,  Chi Hoon Jun ,  Youn Tae Kim

    IPC分类号： H01L21/302 ,  B29D11/00

    CPC分类号： G02B26/001 ,  G01J3/26 ,  G02B5/0833 ,  G02B6/29361 ,  G02B6/29389 ,  G02B6/29395

    摘要： A method of manufacturing a tunable wavelength optical filter. The method includes steps of forming a first sacrificial oxide film for floating a lower mirror on a semiconductor substrate; sequentially laminating conductive silicon films and oxide films for defining a mirror region on the first sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form a lower mirror; sequentially laminating conductive silicon films and oxide films for defining the mirror region on a second sacrificial oxide film in a multi-layer and laminating another conductive silicon film to form an upper mirror and forming an optical tuning space between the lower mirror and the upper mirror and etching the first sacrificial oxide film and the second sacrificial oxide film such that the lower mirror is floated on the semiconductor substrate.

    摘要翻译： 一种可调波长光学滤波器的制造方法。 该方法包括以下步骤：在半导体衬底上形成用于浮置下反射镜的第一牺牲氧化膜; 依次层叠导电硅膜和用于在多层中在第一牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成下反射镜; 依次层叠导电硅膜和用于在多层中的第二牺牲氧化膜上限定反射镜区域的氧化物膜，并层叠另一导电硅膜以形成上反射镜并在下反​​射镜和上反射镜之间形成光学调谐空间，以及 蚀刻第一牺牲氧化物膜和第二牺牲氧化物膜，使得下反射镜浮在半导体衬底上。

    Circuit for calculating a three-dimensional inclination angle
    34.
    发明授权
    Circuit for calculating a three-dimensional inclination angle 有权
    用于计算三维倾斜角的电路

    公开(公告)号：US08359758B2

    公开(公告)日：2013-01-29

    申请号：US12672997

    申请日：2008-04-15

    申请人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    发明人： Sung Sik Lee ,  Myung Lae Lee ,  Chang Han Je ,  Gunn Hwang ,  Chang Auck Choi

    IPC分类号： G01C9/00

    CPC分类号： G01C9/00 ,  G01C9/06

    摘要： A three-dimensional inclination angle calculation circuit is provided. The three-dimensional inclination angle calculation circuit includes: X-axis, Y-axis, and Z-axis vibration sensors which change X-axis, Y-axis, and Z-axis electrostatic capacitances according to three-dimensional positions of a measured plane with respect to a reference plane, respectively; X-axis, Y-axis, and Z-axis position value acquisition units which acquire X-axis, Y-axis, and Z-axis position values corresponding to the X-axis, Y-axis, and Z-axis electrostatic capacitances, respectively; and an inclination angle calculation unit which calculates an inclination angle of the measured plane with respect to the reference plane based on the X-axis, Y-axis, and Z-axis position values. Accordingly, it is possible to very easily calculate an inclination angle according to a three-dimensional position of a to-be-measured apparatus by using an existing vibration sensor.

    摘要翻译： 提供三维倾斜角计算电路。 三维倾斜角计算电路包括：根据测量平面的三维位置改变X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴振动传感器 分别相对于参考平面; 获取对应于X轴，Y轴和Z轴静电电容的X轴，Y轴和Z轴位置值的X轴，Y轴和Z轴位置值获取单元， 分别; 以及倾斜角计算单元，其基于X轴，Y轴和Z轴位置值计算测量平面相对于参考平面的倾斜角度。 因此，通过使用现有的振动传感器，可以非常容易地计算出被测量装置的三维位置的倾斜角度。

    METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION
    35.
    发明申请
    METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION 审中-公开
    通过化学蒸气沉积沉积非晶硅薄膜的方法

    公开(公告)号：US20110159669A1

    公开(公告)日：2011-06-30

    申请号：US13058047

    申请日：2009-09-18

    申请人： Woo Seok Yang ,  Seong mok Cho ,  Ho Jun Ryu ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Woo Seok Yang ,  Seong mok Cho ,  Ho Jun Ryu ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： H01L21/20

    CPC分类号： C23C16/0227 ,  C23C16/24

    摘要： Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.

    摘要翻译： 提供了一种通过化学气相沉积（CVD）沉积非晶硅薄膜的方法，以防止当非晶硅薄膜沉积在被空气暴露污染的基底上时发生气泡缺陷。 沉积方法包括用等离子体激活的反应气体清洁污染的基底的表面，并在清洁的基底上沉积非晶硅薄膜。 这里，从基板清洗步骤到薄膜沉积步骤保持真空状态，以便通过再次暴露于空气来防止清洁的基板表面的污染。

    INFRARED SENSOR AND METHOD OF FABRICATING THE SAME
    37.
    发明申请
    INFRARED SENSOR AND METHOD OF FABRICATING THE SAME 失效
    红外传感器及其制造方法

    公开(公告)号：US20100155601A1

    公开(公告)日：2010-06-24

    申请号：US12511251

    申请日：2009-07-29

    申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： H01L27/14 ,  B05D5/12 ,  H01L21/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/10 ,  H01L31/022408 ,  H01L31/108

    摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

    摘要翻译： 提供了一种红外线传感器及其制造方法。 该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层， 连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。 因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。 因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL
    38.
    发明申请
    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL 审中-公开
    透镜结构，使用红外线检测像素的BOLOMETER结构，以及制作红外检测像素的方法

    公开(公告)号：US20100148067A1

    公开(公告)日：2010-06-17

    申请号：US12507372

    申请日：2009-07-22

    申请人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/00 ,  C23F1/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/022 ,  G01J5/024

    摘要： Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel.The infrared detection pixel includes a substrate including a read-out integrated circuit (ROIC) and on which a reflection layer for reflecting infrared light is stacked, a bolometer structure formed to be spaced apart from the substrate and including a temperature-sensitive resistive layer, a first metal layer formed in a pattern on one surface of the temperature-sensitive resistive layer, a second metal layer formed in a pattern complementary to the pattern of the first metal layer on the other surface of the temperature-sensitive resistive layer in order to complementarily absorb infrared light, and an insulating layer formed between the temperature-sensitive resistive layer and the first metal layer, and a metal pad receiving a change in resistance of the temperature-sensitive resistive layer according to infrared light absorbed by the first metal layer and the second metal layer from the second metal layer, and transferring the change in resistance to the ROIC.Thus, it is possible to improve responsivity, and implement a simple bolometer structure robust against stress. Consequently, process yield can be improved, and the volume, weight, price, etc., of application products can be reduced by reducing the volume of a bolometer structure.

    摘要翻译： 提供了一种测辐射热计结构，采用测辐射热计结构的红外检测像素，以及制造红外检测像素的方法。 红外线检测像素包括：基板，包括读出集成电路（ROIC），层叠用于反射红外光的反射层，形成为与基板间隔开并包括温度敏感电阻层的测辐射热计结构， 在温度敏感电阻层的一个表面上以图案形成的第一金属层，第二金属层，以与第一金属层的图案互补的图案形成在第一金属层的图案上，以在该温度敏感电阻层的另一个表面上，以便 互补吸收红外光，以及形成在所述耐温电阻层和所述第一金属层之间的绝缘层，以及金属焊盘，所述金属焊盘根据由所述第一金属层吸收的红外光接收所述耐温电阻层的电阻变化，以及 来自第二金属层的第二金属层，并且传递对ROIC的电阻变化。 因此，可以提高响应度，并且实现对应力的鲁棒的简单的测辐射热计结构。 因此，可以提高工艺产量，并且可以通过减小测辐射热计结构的体积来减少应用产品的体积，重量，价格等。

    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME
    39.
    发明申请
    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME 失效
    高灵敏度Z轴振动传感器及其制造方法

    公开(公告)号：US20100132467A1

    公开(公告)日：2010-06-03

    申请号：US12509360

    申请日：2009-07-24

    申请人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01P15/125 ,  H01L21/306

    CPC分类号： G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

    摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

    摘要翻译： 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。