公开(公告)号：US5589777A

公开(公告)日：1996-12-31

申请号：US493384

申请日：1995-06-21

Applicant: Bradley K. Davis ,  Johannes O. Voorman ,  Joao N. V. L. Ramalho ,  Patrice Gamand

Inventor： Bradley K. Davis ,  Johannes O. Voorman ,  Joao N. V. L. Ramalho ,  Patrice Gamand

IPC: G01R31/02 ,  G06F11/267 ,  G11B5/00 ,  G11B5/40 ,  G11B5/455 ,  G11B5/48 ,  G01R31/302

CPC classification number: G11B5/40 ,  G01R31/02 ,  G06F11/2221 ,  G11B5/455 ,  G11B2005/0016 ,  G11B5/4806

Abstract: A preamplifier circuit for a computer data storage system disk drive read/write head (or HSA) includes multiple test modes to enable electrical testing of the preamplifier, the read/write heads, and associated circuitry without physically probing the components or circuitry. Communication between the preamplifier and a host controller provides for test mode selection and test mode enablement within the preamplifier. Testing occurs using only the normal interface connector to the head disk assembly (HDA) in which the preamplifier and HSA are embodied. Properties such as electrical resistance, ESD, preamplifier bond wire connection integrity, head bond wire and solder joint integrity, and connections from the head slider to the preamplifier leads are all tested. Testing occurs without probing to provide efficient, reliable, and cost effective manufacturing and testing benefits of the read/write heads, flex assembly, HSA, and HDA.

Abstract translation: 用于计算机数据存储系统的前置放大器电路磁盘驱动器读/写头（或HSA）包括多个测试模式，以使得能够电前测试前置放大器，读/写磁头和相关联的电路，而无需物理地探测组件或电路。 前置放大器和主机控制器之间的通信提供前置放大器内的测试模式选择和测试模式启用。 仅使用前置放大器和HSA的头盘组件（HDA）的正常接口连接器进行测试。 性能如电阻，ESD，前置放大器接合线连接完整性，头接合线和焊点完整性，以及从头滑块到前置放大器引线的连接都经过测试。 测试发生在无需提供读写头，Flex组件，HSA和HDA的高效，可靠且具有成本效益的制造和测试优势。

公开(公告)号：US5451905A

公开(公告)日：1995-09-19

申请号：US239013

申请日：1994-05-05

Applicant: Patrice Gamand ,  Christophe Cordier

Inventor： Patrice Gamand ,  Christophe Cordier

IPC: H01P1/00 ,  H01P1/24 ,  H03F3/60

CPC classification number: H03F3/601

Abstract: A semiconductor device microwave integrated circuit includes at least a transistor stage which stage includes a microwave matching circuit and a d.c. bias circuit interconnected at a link node (A). The transistor stage further includes a stabilizing circuit which includes an open stub line connected to the link node. The open stub line connected to the link node is a .lambda./4 line which at the operating frequency imposes a short circuit on the link node. A matching circuit made up of a low-value resistor connected to ground in the microwave mode through a d.c. isolating capacitor is connected to the link node. A .lambda./4 line of the radial type (.lambda./4 radial stub) provides broadband operation.

Abstract translation: 半导体器件微波集成电路至少包括晶体管级，该级包括微波匹配电路和直流电路。 在链路节点（A）互连的偏置电路。 晶体管级还包括稳定电路，其包括连接到链路节点的开放短截线。 连接到链路节点的开放短线是λ/ 4线，其在工作频率上在链路节点上施加短路。 一个匹配电路由一个低电阻电阻组成，通过直流微波模式连接到地。 隔离电容连接到链路节点。 径向类型（λ/ 4径向短截线）的λ/ 4线提供宽带操作。

公开(公告)号：US5386130A

公开(公告)日：1995-01-31

申请号：US146765

申请日：1993-11-02

Applicant: Patrice Gamand ,  Christian Caux

Inventor： Patrice Gamand ,  Christian Caux

IPC: H03F3/60 ,  H01L29/80

CPC classification number: H03F3/607

Abstract: Semiconductor device including a distributed-type monolithic integrated circuit on a substrate, operating in the high frequency and/or microwave range, this distributed circuit having a plurality of coupled stages each having at least a transistor with a first electrode being AC connected to ground. The first electrode is connected to ground by two branches, a first branch being connected directly to a first ground stub and a second branch being connected to a second ground stub through a resistor.

Abstract translation: 该半导体器件包括在高频和/或微波范围内工作的衬底上的分布式单片集成电路，该分布式电路具有多个耦合级，每个具有至少一个晶体管，第一电极与地电连接。 第一电极通过两个分支连接到地，第一分支直接连接到第一接地短截线，第二分支通过电阻器连接到第二接地短截线。

公开(公告)号：US5089717A

公开(公告)日：1992-02-18

申请号：US711551

申请日：1991-05-16

Applicant: Patrice Gamand ,  Bertrand Gabillard

Inventor： Patrice Gamand ,  Bertrand Gabillard

IPC: H03B5/18 ,  H03B7/06 ,  H03B19/14 ,  H03K5/00

CPC classification number: H03B19/14 ,  H03K5/00006 ,  H03B2200/0028 ,  H03B5/1852 ,  H03B7/06

Abstract: An integrated semiconductor device including a frequency divide-by-two circuit comprising an inverter stage and a switching transistor (T2) which is controlled by a microwave input signal (E). The divider circuit includes an oscillator stage in that the inverter stage is at least equipped with a reactive element which in combination with the inverter stage forms a negative resistant network. The switching transistor is connected in parallel with this reactive element and the transmit time .tau..sub.0 of the switch is less than the transit time .tau..sub.2 of a signal propagating through the reactive element.

Abstract translation: 一种包括由微波输入信号（E）控制的逆变器级和开关晶体管（T2）的二分频电路的集成半导体器件。 分频器电路包括振荡器级，其中变换器级至少配备有与逆变器级组合形成负电阻网络的无功元件。 开关晶体管与该无功元件并联连接，并且开关的发送时间τ0小于通过反应元件传播的信号的通过时间τ2。

公开(公告)号：US5017887A

公开(公告)日：1991-05-21

申请号：US447965

申请日：1989-12-07

Applicant: Patrice Gamand

Inventor： Patrice Gamand

IPC: H03F3/195 ,  H03F3/193 ,  H03F3/21 ,  H03F3/213

CPC classification number: H03F3/1935

Abstract: An integrated semiconductor arrangement comprising a high-frequency power amplifier stage, which comprises two field-effect transistor having first connection means to influence the output power by means fo the unit gate width of the amplifier stage, and second connection means to influence the value of the input capacitance of the amplifier stage. This stage also comprises means to ensure the feedback of direct current to ground and also includes D.C. biasing means.

Abstract translation: 一种包括高频功率放大器级的集成半导体装置，其包括具有第一连接装置的两个场效应晶体管，以便通过放大器级的单位栅极宽度来影响输出功率;以及第二连接装置， 放大器级的输入电容。 该阶段还包括确保直流电对地的反馈并且还包括直流偏置装置的装置。