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41 条记录 (耗时 0.025 秒)

    GaN-based devices using (Ga, AL, In)N base layers
    31.
    发明授权
    GaN-based devices using (Ga, AL, In)N base layers 失效
    使用（Ga，AL，In）N基层的GaN基器件

    公开(公告)号：US6156581A

    公开(公告)日：2000-12-05

    申请号：US984473

    申请日：1997-12-03

    申请人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown

    发明人： Robert P. Vaudo ,  Joan M. Redwing ,  Michael A. Tischler ,  Duncan W. Brown

    IPC分类号： C30B33/00 ,  H01L21/205 ,  H01L33/00

    CPC分类号： C30B33/00 ,  B82Y15/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S117/915 ,  Y10T428/13 ,  Y10T428/21

    摘要： A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire. Devices which may be fabricated utilizing the HVPE base layer of the invention include light emitting diodes, detectors, transistors, and semiconductor lasers.

    摘要翻译： 在衬底上形成（镓，铝，铟）氮化物基底层的方法，用于例如通过MOCVD或MBE制造其上的微电子器件结构。 在衬底存在下，使气相（Ga，Al，In）与气相含氮化合物反应，形成（Ga，Al，In）氮化物。 （Ga，Al，In）氮化物基层通过HVPE在衬底上生长，得到包含其上具有（Ga，Al，In）氮化物基底层的衬底的微电子器件基底。 这种HVPE工艺的产物包括在衬底上的（Ga，Al，In）N的器件质量，单晶无裂纹基底层，其中基底层的厚度可以例如为2 微米和更大，并且基底层的缺陷密度可以例如为1E8cm-2或更低的数量级。 因此，微电子器件可以形成在基底层上，在诸如蓝宝石的外来（差的晶格匹配）材料的衬底上。 可以使用本发明的HVPE基层制造的器件包括发光二极管，检测器，晶体管和半导体激光器。

    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
    37.
    发明授权
    Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices 有权
    沉积具有减小的裂纹和/或表面缺陷密度的外延热电薄膜和相关器件的方法

    公开(公告)号：US07804019B2

    公开(公告)日：2010-09-28

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。

    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES
    38.
    发明申请
    METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES 有权
    沉积具有减少裂纹和/或表面缺陷密度的外延热电片的方法和相关设备

    公开(公告)号：US20080185030A1

    公开(公告)日：2008-08-07

    申请号：US12024475

    申请日：2008-02-01

    申请人： Jonathan Pierce ,  Robert P. Vaudo

    发明人： Jonathan Pierce ,  Robert P. Vaudo

    IPC分类号： H01L35/28 ,  H01L35/34 ,  H01L37/00

    CPC分类号： H01L35/34 ,  H01L35/32

    摘要： A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

    摘要翻译： 提供了一种基底，其包括生长表面，该生长表面相对于由约5度至约45度的切割角度的基底的结晶定向限定的平面而切除。 在生长表面上外延生长热电膜。 热电膜的晶体取向可相对于生长表面倾斜约5度至约30度。 衬底的生长表面也可以被图案化以在热电膜的外延生长之前限定从其突出的多个台面。 还讨论了相关方法和热电装置。