公开(公告)号：US08698214B2

公开(公告)日：2014-04-15

申请号：US13654864

申请日：2012-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu

IPC: H01L27/085

CPC classification number: H01L29/78693 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

Abstract translation: 半导体器件包括：基底绝缘膜，包括硅，在基底绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，与栅极绝缘膜接触并与至少氧化物重叠的栅极; 半导体膜，以及与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括从与基底绝缘膜的界面朝向氧化物半导体膜的内部分布的硅浓度低于或等于1.0at的区域。 ％。 晶体部分至少包括在该区域中。