THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    31.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20140183535A1

    公开(公告)日:2014-07-03

    申请号:US13875722

    申请日:2013-05-02

    CPC classification number: H01L27/124 H01L27/1248 H01L27/322 H01L27/3248

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate, a gate line disposed on the substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the semiconductor and including a source electrode, a drain electrode disposed on the semiconductor and opposite to the source electrode, a color filter disposed on the gate insulating layer, the data line and the drain electrode, an overcoat disposed on the color filter and including an inorganic material, a contact hole defined in the color filter and the overcoat, where the contact hole exposes the drain electrode, and a pixel electrode disposed on the overcoat and connected through the contact hole to the drain electrode, in which a plane shape of the contact hole in the overcoat and a plane shape of the contact hole in the color filter are substantially the same as each other.

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括:衬底,设置在衬底上并包括栅电极的栅极线,设置在栅极线上的栅极绝缘层,设置在栅极绝缘层上的半导体 ,设置在半导体上的数据线,包括源电极,设置在半导体上并与源电极相对的漏电极,布置在栅绝缘层上的滤色器,数据线和漏电极, 所述滤色器包括无机材料,所述滤色器中限定的接触孔和所述外涂层,其中所述接触孔暴露于所述漏电极,以及设置在所述外涂层上并通过所述接触孔连接到所述漏电极的像素电极, 外涂层中的接触孔的平面形状和滤色器中的接触孔的平面形状基本上与每个 r。

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