公开(公告)号：US20160247826A1

公开(公告)日：2016-08-25

申请号：US15042950

申请日：2016-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L27/12

CPC classification number: H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

Abstract: An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

Abstract translation: 本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。 在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以 第二电极和布线。 优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

公开(公告)号：US09324775B2

公开(公告)日：2016-04-26

申请号：US14920972

申请日：2015-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.