公开(公告)号：US20240088243A1

公开(公告)日：2024-03-14

申请号：US18140068

申请日：2023-04-27

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Cheng TAN ,  Wentai WANG ,  Enning ZHANG ,  Shiliang JI ,  Haiyang ZHANG

IPC分类号： H01L29/417 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/41775 ,  H01L29/401 ,  H01L29/4232 ,  H01L29/66545

摘要： A semiconductor structure includes a substrate that includes a base, a plurality of channel layers on the base, and an isolation layer between each of the channel layers. The semiconductor structure also includes a gate on the substrate, spanning a top and a portion of sidewalls of the channel layers. The semiconductor structure also includes a sidewall structure on sidewalls at two sides of the gate, a source/drain region in the substrate at two sides of the gate and the sidewall structure, a source/drain electrical connection layer on the source/drain region, and an isolation structure between the source/drain electrical connection layer and the gate. The isolation structure includes a cavity, including a first cavity region and a second cavity region located on the first cavity region. A width of the second cavity region is smaller than a width of the first cavity region.