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公开(公告)号:USD407719S
公开(公告)日:1999-04-06
申请号:US89876
申请日:1998-06-25
申请人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
设计人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
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公开(公告)号:USD406135S
公开(公告)日:1999-02-23
申请号:US79835
申请日:1997-11-19
申请人: Katsumi Nagano , Hiroki Nishii , Masao Tamura , Toshiro Iizuka
设计人: Katsumi Nagano , Hiroki Nishii , Masao Tamura , Toshiro Iizuka
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公开(公告)号:US5817238A
公开(公告)日:1998-10-06
申请号:US816519
申请日:1997-03-13
申请人: Kaoru Makino , Kazuhiro Kawai , Masatake Tanimura , Masao Tamura
发明人: Kaoru Makino , Kazuhiro Kawai , Masatake Tanimura , Masao Tamura
IPC分类号: C07D307/62 , B01D15/08 , B01J39/26 , C07B63/00
CPC分类号: B01J39/26
摘要: A process for producing purified L-ascorbic acid, which comprises subjecting an aqueous solution of crude L-ascorbic acid to column chromatography using a strongly acidic cation exchange resin; and a method of purifying L-ascorbic acid, which comprises subjecting an aqueous solution of crude L-ascorbic acid to column chromatography using a strongly acidic cation exchange resin.
摘要翻译: 一种生产纯化的L-抗坏血酸的方法,其包括使用强酸性阳离子交换树脂对粗L-抗坏血酸水溶液进行柱层析; 以及L-抗坏血酸的纯化方法,其特征在于,使用强酸性阳离子交换树脂对粗L-抗坏血酸水溶液进行柱色谱分离。
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公开(公告)号:USD395655S
公开(公告)日:1998-06-30
申请号:US73846
申请日:1997-07-10
申请人: Hiroki Nishii , Masao Tamura , Katsumi Nagano , Toshiro Iizuka
设计人: Hiroki Nishii , Masao Tamura , Katsumi Nagano , Toshiro Iizuka
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公开(公告)号:US5357131A
公开(公告)日:1994-10-18
申请号:US93033
申请日:1993-07-19
申请人: Hideo Sunami , Tokuo Kure , Yoshifumi Kawamoto , Masao Tamura , Masanobu Miyao
发明人: Hideo Sunami , Tokuo Kure , Yoshifumi Kawamoto , Masao Tamura , Masanobu Miyao
IPC分类号: H01L21/033 , H01L21/308 , H01L27/108 , H01L27/12
CPC分类号: H01L27/1203 , H01L21/0337 , H01L21/3086 , H01L27/1082 , H01L27/10832 , H01L27/10841
摘要: A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.
摘要翻译: 一种半导体存储器,其中每个电容器的一部分形成在由形成在半导体衬底中的凹部包围的岛状区域的侧壁上,并且岛状区域和其它区域通过凹部电隔离。
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公开(公告)号:USD299644S
公开(公告)日:1989-01-31
申请号:US127004
申请日:1987-11-30
申请人: Fumiharu Ohta , Masao Tamura , Chuan Ming Hung
设计人: Fumiharu Ohta , Masao Tamura , Chuan Ming Hung
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公开(公告)号:USD299228S
公开(公告)日:1989-01-03
申请号:US19144
申请日:1987-02-25
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38.Method of producing single crystal film utilizing a two-step heat treatment 失效
标题翻译: 利用两步热处理制备单晶膜的方法公开(公告)号:US4565584A
公开(公告)日:1986-01-21
申请号:US460801
申请日:1983-01-25
申请人: Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
发明人: Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
IPC分类号: H01L21/20 , C30B1/02 , C30B1/08 , H01L21/31 , H01L21/263 , H01L21/205
CPC分类号: C30B1/08 , C30B1/023 , Y10S148/003 , Y10S148/09 , Y10S148/123 , Y10S438/909
摘要: An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
摘要翻译: 连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中,然后进行热处理。 在远低于现有技术方法的温度下对该膜进行固相外延生长,从而形成单晶膜。
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公开(公告)号:USD408399S
公开(公告)日:1999-04-20
申请号:US89878
申请日:1998-06-25
申请人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
设计人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
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公开(公告)号:USD408032S
公开(公告)日:1999-04-13
申请号:US89877
申请日:1998-06-25
申请人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
设计人: Katsumi Nagano , Hiroki Nishii , Toshiro Iizuka , Masao Tamura , Morio Iwasaki
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