公开(公告)号：US06500274B2

公开(公告)日：2002-12-31

申请号：US09761417

申请日：2001-01-16

申请人： Jih-Churng Twu ,  Ming-Dar Guo ,  Chia-Chun Cheng

发明人： Jih-Churng Twu ,  Ming-Dar Guo ,  Chia-Chun Cheng

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  B08B3/048 ,  B08B3/102 ,  Y10S134/902

摘要： An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body. The method for cleaning wafers may be practiced by first positioning a conduit vertically through and with an outside wall of the conduit sealingly engaging a bottom wall of a liquid tank with an outlet end of the conduit immersed in a cleaning solution in the tank; then mounting a cup-shaped container in an upside-down position over the outlet end of the conduit to collect any ammonia vapors exiting the conduit and preventing the vapor from reaching an upper portion of the tank cavity.

摘要翻译： 提供了一种通过湿式工艺技术清洗晶片的装置和方法，而不会对晶片表面造成氨蒸汽损坏。 湿式清洗槽的装置由用于在其中保持一定数量的清洗液的罐体组成; 通过并垂直于罐体的底壁安装的导管，用于通过出口将含氨溶液进料到罐体中; 以及安装在管道出口上方的倒置位置的杯形容器，用于阻止由含氨溶液产生的氨蒸气到达罐体的上腔体。 用于清洁晶片的方法可以通过首先将导管垂直地定位在导管的外壁上并与其中的外壁密封地接合液体箱的底壁的同时将导管的出口端浸入在罐中的清洁溶液中来实施; 然后在管道的出口端上方倒置一个杯形容器，以收集离开管道的任何氨蒸汽，并防止蒸汽到达罐腔的上部。

公开(公告)号：US06405452B1

公开(公告)日：2002-06-18

申请号：US09820119

申请日：2001-03-28

申请人： Jih-Churng Twu ,  Ming-Dar Guo ,  Yu-Chien Hsiao ,  Chia-Chun Cheng

发明人： Jih-Churng Twu ,  Ming-Dar Guo ,  Yu-Chien Hsiao ,  Chia-Chun Cheng

IPC分类号： F26B2114

CPC分类号： H01L21/67034 ,  Y10S134/902

摘要： A method for drying wafers after a wet bench process is disclosed. In the method, a wafer is first immersed in a volume of DI water held in a container. A mixture of alcohol vapor/inert gas is then flown into the upper portion of the container that is not filled with the volume of DI water at a flow rate of less than 20 l/min. The wafer is then withdrawn from the DI water into the upper portion of the container filled with the alcohol vapor/inert gas mixture and thereby driving DI water molecules off the surface of the wafer without leaving organic residue on the wafer surface.

摘要翻译： 公开了在湿式工艺过程之后干燥晶片的方法。 在该方法中，首先将晶片浸入保持在容器中的一定体积的DI水中。 然后将醇蒸汽/惰性气体的混合物以小于20l / min的流速流入未充满体积的去离子水的容器的上部。 然后将晶片从去离子水中排出到装有醇蒸气/惰性气体混合物的容器的上部，从而将DI水分子驱离晶片表面，而不会在晶片表面上留下有机残留物。