公开(公告)号：US20070292778A1

公开(公告)日：2007-12-20

申请号：US11811979

申请日：2007-06-13

Applicant: Kyoung-Yoon Bang ,  Hae-Young Jeong ,  Yong-Hoon Kim ,  Yo-Han Choi ,  Hyung-Joo Lee

Inventor： Kyoung-Yoon Bang ,  Hae-Young Jeong ,  Yong-Hoon Kim ,  Yo-Han Choi ,  Hyung-Joo Lee

IPC: G03C5/00 ,  G06K9/00 ,  G01B11/00

CPC classification number: G01B11/24 ,  G03F7/70625 ,  G06T7/001 ,  G06T2207/30148

Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract translation: 测量临界尺寸的方法可以包括在衬底上形成对象图案并在衬底上形成多个参考图案，其中多个参考图案中的每一个具有不同的临界尺寸。 可以测量多个参考图案中的每一个的光学特性以为每个参考图案提供相应的测量光学特性，并且可以测量对象图案的光学特性以提供对象图案的测量光学特性。 可以将对象图案的测量光学性质与参考图案的测量光学性质进行比较，并且可以将对象图案的临界尺寸确定为与具有测量的光学性质的参考图案的临界尺寸相同， 最接近被测物体图案的光学特性。 还讨论了相关设备。

公开(公告)号：US07029593B2

公开(公告)日：2006-04-18

申请号：US10685032

申请日：2003-10-14

Applicant: Myeong-Cheol Kim ,  Yong-Hoon Kim ,  Jeong-Yun Lee

Inventor： Myeong-Cheol Kim ,  Yong-Hoon Kim ,  Jeong-Yun Lee

IPC: G05D5/00

CPC classification number: H01L22/20 ,  G03F1/36 ,  G03F1/80

Abstract: A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.

Abstract translation: 用于控制蚀刻工艺的CD的方法将设计尺寸和蚀刻尺寸之间的差异定义为尺寸位移并且定义尺寸位移的目标值。 在具有不同曝光比的每个组中制备多个样品。 每个组的多个样品被蚀刻直到检测到蚀刻终点，然后在检测到蚀刻终点之后过度蚀刻均匀的时间间隔。 使用蚀刻终点和过蚀刻时间，确定到蚀刻终点时间的过蚀刻时间的相关函数，并且使用相关函数确定蚀刻终点的过蚀刻时间。