公开(公告)号：US07323416B2

公开(公告)日：2008-01-29

申请号：US11196876

申请日：2005-08-04

申请人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan D. Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

发明人： Feng Q. Liu ,  Tianbao Du ,  Alain Duboust ,  Yan Wang ,  Yongqi Hu ,  Stan D. Tsai ,  Liang-Yuh Chen ,  Wen-Chiang Tu ,  Wei-Yung Hsu

IPC分类号： H01L21/302

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  H01L21/32125 ,  H01L21/6875 ,  H01L21/7684

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.

摘要翻译： 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面，提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义上的导电材料的方法，该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率除去，以及 然后用至少一种化学机械抛光技术研磨衬底。

公开(公告)号：US07128825B2

公开(公告)日：2006-10-31

申请号：US10378097

申请日：2003-02-26

申请人： Feng Q. Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Siew S. Neo ,  Yan Wang ,  Alain Duboust ,  Liang-Yuh Chen

发明人： Feng Q. Liu ,  Stan D. Tsai ,  Yongqi Hu ,  Siew S. Neo ,  Yan Wang ,  Alain Duboust ,  Liang-Yuh Chen

IPC分类号： C25F3/00

CPC分类号： H01L21/32125 ,  B23H3/08 ,  B23H5/08 ,  B24B37/0056 ,  B24B37/044 ,  B24B37/046 ,  C09G1/02 ,  C09G1/04 ,  C25F3/02 ,  H01L21/32134

摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 3 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

公开(公告)号：US07842169B2

公开(公告)日：2010-11-30

申请号：US10382032

申请日：2003-03-04

申请人： Stan Tsai ,  Feng Q. Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

发明人： Stan Tsai ,  Feng Q. Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

IPC分类号： C25F3/30

CPC分类号： B24B37/046 ,  B24B37/26 ,  B24B49/10 ,  C25F7/00 ,  H01L21/32125

摘要： A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

摘要翻译： 通常提供用于处理室中的局部抛光和沉积控制的方法和装置。 在一个实施例中，提供了一种用于电化学处理衬底的设备，其通过控制跨越处理区域的电偏压分布来选择性地抛光衬底的离散导电部分，从而控制衬底的两个或更多导电部分之间的处理速率。

公开(公告)号：US20110053465A1

公开(公告)日：2011-03-03

申请号：US12941816

申请日：2010-11-08

申请人： STAN TSAI ,  Feng Q. Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

发明人： STAN TSAI ,  Feng Q. Liu ,  Yan Wang ,  Rashid Mavliev ,  Liang-Yuh Chen ,  Alain Duboust

IPC分类号： B24B1/00 ,  B24D11/00

CPC分类号： B24B37/046 ,  B24B37/26 ,  B24B49/10 ,  C25F7/00 ,  H01L21/32125

摘要： A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

摘要翻译： 通常提供用于处理室中的局部抛光和沉积控制的方法和装置。 在一个实施例中，提供了一种用于电化学处理衬底的设备，其通过控制跨越处理区域的电偏压分布来选择性地抛光衬底的离散导电部分，从而控制衬底的两个或更多导电部分之间的处理速率。

公开(公告)号：US20070084729A1

公开(公告)日：2007-04-19

申请号：US11251581

申请日：2005-10-14

申请人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Ricardo Martinez ,  Yan Wang ,  Jose Salas-Vernis

发明人： Antoine Manens ,  Alain Duboust ,  Paul Butterfield ,  Ricardo Martinez ,  Yan Wang ,  Jose Salas-Vernis

IPC分类号： C25D21/06

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/16 ,  B24B53/017

摘要： Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.

摘要翻译： 本发明的实施例通常提供一种用于清洁电化学机械平面化装置中的电接触的方法和装置。 在一个实施例中，用于在电加工设备中清洁接触组件的方法包括以下步骤：从接触组件排出电解液并将冲洗流体流动到接触组件中。 在另一个实施例中，用于清洁电加工设备中的接触组件的方法包括以下步骤：防止流体在接触组件的界面和设置在其外部的垫片之间通过，将冲洗流体流动到接触组件中并排出流出的流体 的接触组件。

公开(公告)号：US20100267318A1

公开(公告)日：2010-10-21

申请号：US12823872

申请日：2010-06-25

申请人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

发明人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

IPC分类号： B24D11/02

CPC分类号： B24B37/013 ,  B24B37/046 ,  B24B37/205 ,  B24B37/22 ,  B24B37/26 ,  B24D11/02

摘要： A polishing pad include a polishing layer having a polishing surface and a backing layer on a side of the polishing layer opposite the polishing surface. An outer edge of the polishing layer overhangs an outer edge of the backing layer.

摘要翻译： 抛光垫包括在抛光层的与研磨表面相对的一侧上具有抛光表面和背衬层的抛光层。 抛光层的外边缘突出在背衬层的外边缘上。

公开(公告)号：US08066552B2

公开(公告)日：2011-11-29

申请号：US11043361

申请日：2005-01-26

申请人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

发明人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

IPC分类号： B24B29/00

CPC分类号： B24B37/013 ,  B24B37/046 ,  B24B37/205 ,  B24B37/22 ,  B24B37/26 ,  B24D11/02

摘要： A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

摘要翻译： 抛光垫具有固定到抛光层的抛光层和背衬层。 抛光层具有抛光表面，第一厚度，第一可压缩性和约40至80肖氏D之间的硬度。背衬层具有大于第一可压缩性的第二厚度并具有第二可压缩性。 第一厚度，第一可压缩性，第二厚度和第二可压缩性使得抛光表面在1.5psi或更小的施加压力下偏转大于抛光层的厚度不均匀性。

公开(公告)号：US07311592B2

公开(公告)日：2007-12-25

申请号：US11556011

申请日：2006-11-02

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

IPC分类号： B24D3/34 ,  B24D11/00 ,  B24D17/00

CPC分类号： B82Y30/00 ,  B24B37/046 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34

摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.

摘要翻译： 提供了一种用于平坦化基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底的至少部分导电表面的主体。 可以在抛光制品中形成多个穿孔，以使材料流过其中。 电极还通过多个穿孔的至少一部分暴露于抛光表面。 制品还可以包括具有多个凹槽的抛光表面，其中多个凹槽的一部分与多个穿孔的一部分相交。

公开(公告)号：US07066800B2

公开(公告)日：2006-06-27

申请号：US10033732

申请日：2001-12-27

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

IPC分类号： B24D11/00

CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B53/017 ,  B24B57/02 ,  B82Y30/00 ,  Y10T428/24273 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/24917

摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

公开(公告)号：US06988942B2

公开(公告)日：2006-01-24

申请号：US10894756

申请日：2004-07-20

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel A. Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul D. Butterfield ,  Rashid Mavliev ,  Stan D. Tsai

IPC分类号： B24D11/00

CPC分类号： H01L21/32125 ,  B23H5/08 ,  B24B37/22 ,  B24B37/24 ,  B24B37/26 ,  B24B53/017 ,  B24B57/02 ,  B82Y30/00 ,  Y10T428/24273 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/24917

摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.