Display device and display driving method
    31.
    发明授权
    Display device and display driving method 有权
    显示设备和显示驱动方式

    公开(公告)号:US08325171B2

    公开(公告)日:2012-12-04

    申请号:US12684903

    申请日:2010-01-09

    IPC分类号: G09G3/20

    摘要: An exemplary display device includes multiple pixels, first through third gate lines and a data line. The pixels include first through third pixels. The first through third gate lines respectively are electrically coupled with the first through third pixels and for deciding whether to enable the first through third pixels. The first pixel is electrically coupled to the data line to receive a display data provided by the data line. The second pixel is electrically coupled to the first pixel to receive a display data provided by the data line through the first pixel. The third pixel is electrically coupled to the second pixel to receive a display data provided by the data line through both the first pixel and the second pixel. A display driving method adapted to be implemented in the display device also is provided.

    摘要翻译: 示例性显示装置包括多个像素,第一到第三栅极线和数据线。 像素包括第一至第三像素。 第一至第三栅极线分别与第一至第三像素电耦合,并用于决定是否启用第一至第三像素。 第一像素电耦合到数据线以接收由数据线提供的显示数据。 第二像素电耦合到第一像素以接收由数据线通过第一像素提供的显示数据。 第三像素电耦合到第二像素,以接收由数据线通过第一像素和第二像素提供的显示数据。 还提供了适用于显示装置中的显示驱动方法。

    ELECTROPHORETIC DISPLAY AND DRIVING METHOD THEREOF
    32.
    发明申请
    ELECTROPHORETIC DISPLAY AND DRIVING METHOD THEREOF 有权
    电泳显示及其驱动方法

    公开(公告)号:US20120001958A1

    公开(公告)日:2012-01-05

    申请号:US13172854

    申请日:2011-06-30

    IPC分类号: G09G5/10 G09G3/34 G09G5/00

    摘要: An electrophoretic display and a driving method thereof are provided. The electrophoretic display includes a display panel, a storage unit, a timing controller (TCON). The display panel has a plurality of sub-pixels. The storage unit stores a plurality sets of driving waveforms, wherein the lengths of driving waveforms in the sets of driving waveforms are different from each other. The TCON has an analysis module, couples to the display panel and the storage unit, and receives an image signal having a plurality of display data. The analysis module analyzes the display data to obtain a analysis result. The TCON selects one of the sets of driving waveforms according to the analysis result, and drives the sub-pixels according to the selected set of driving waveforms.

    摘要翻译: 提供电泳显示器及其驱动方法。 电泳显示器包括显示面板,存储单元,定时控制器(TCON)。 显示面板具有多个子像素。 存储单元存储多组驱动波形,其中驱动波形组中的驱动波形的长度彼此不同。 TCON具有分析模块,耦合到显示面板和存储单元,并且接收具有多个显示数据的图像信号。 分析模块分析显示数据以获得分析结果。 TCON根据分析结果选择一组驱动波形,并根据所选择的一组驱动波形驱动子像素。

    Process for fabricating integrated circuits with dual gate devices
therein
    34.
    发明授权
    Process for fabricating integrated circuits with dual gate devices therein 失效
    用于制造其中具有双栅极器件的集成电路的工艺

    公开(公告)号:US6121124A

    公开(公告)日:2000-09-19

    申请号:US99715

    申请日:1998-06-18

    申请人: Chun-Ting Liu

    发明人: Chun-Ting Liu

    摘要: The invention is directed to a process for forming p+ and n+ gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected hobo a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is selectively performed in the portion of the metal silicide layer overlying a field oxide region that separates the n-type region from the p-type region in the substrate surface. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n+ gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.

    摘要翻译: 本发明涉及在单个衬底上形成p +和n +栅极的方法。 在其上形成有n型和p型区的衬底上形成多晶硅或非晶硅层,并在其上形成二氧化硅层,并且对该结构进行低温退火。 然后在结构上形成一层金属硅化物,并将n型和p型掺杂剂注入所得结构中。 在金属硅化物层的覆盖在衬底表面中从n型区域与p型区域分离的场氧化物区域的部分中选择性地进行氮注入。 氮注入减少了p型掺杂剂通过硅化物层并进入n +栅极的量。 然后在结构上形成电介质材料并进行图案化,然后对该结构进行额外的处理步骤,以在衬底的n区和p区上形成栅叠层。

    Integrated circuit fabrication
    35.
    发明授权
    Integrated circuit fabrication 失效
    集成电路制造

    公开(公告)号:US5688704A

    公开(公告)日:1997-11-18

    申请号:US565286

    申请日:1995-11-30

    申请人: Chun-Ting Liu

    发明人: Chun-Ting Liu

    CPC分类号: H01L29/66583

    摘要: A method of integrated circuit fabrication is disclosed. Layers of silicon nitride and silicide dioxide are formed upon a silicon substrate. These layers are etched to create a channel having the width of the intended gate. The silicon dioxide is then wet etched. Next, polysilicon is deposited within the channel. The silicon dioxide and the silicon nitride layers are then removed. A T-shaped polysilicon gate facilitates the formation of rectangular-shaped silicon nitride spacers. Subsequent salicidation is performed.

    摘要翻译: 公开了一种集成电路制造方法。 在硅衬底上形成氮化硅层和二氧化硅二氧化硅层。 这些层被蚀刻以产生具有预定栅极宽度的沟道。 然后湿式蚀刻二氧化硅。 接下来,多晶硅沉积在通道内。 然后除去二氧化硅和氮化硅层。 T型多晶硅栅极有助于形成矩形氮化硅间隔物。 随后进行盐化。