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    Stabilized alkaline compositions for cleaning microelectronic substrates
    31.
    发明授权
    Stabilized alkaline compositions for cleaning microelectronic substrates 有权
    用于清洁微电子基板的稳定的碱性组合物

    公开(公告)号：US06599370B2

    公开(公告)日：2003-07-29

    申请号：US09859142

    申请日：2001-05-16

    申请人： David C. Skee

    发明人： David C. Skee

    IPC分类号： C23G102

    CPC分类号： H01L21/02063 ,  C11D3/0073 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D11/0047 ,  C23F1/32 ,  C23G1/20 ,  C23G1/22 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/02071 ,  H01L21/31133 ,  Y10S134/902 ,  Y10S438/906

    摘要： The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01% to about 5% by weight (expressed as % SiO2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

    摘要翻译： 本发明提供了用于微电子工业的含水碱性组合物，用于通过去除光致抗蚀剂残余物和其它不需要的污染物来剥离或清洁半导体晶片衬底 组合物通常含有（a）足够量的一种或多种不含金属离子的碱，以产生约10-13的pH和一种或多种具有至少一个pKa在10-13范围内的浴稳定剂以保持该pH 使用期间 （b）任选的水溶性金属离子的硅酸盐的约0.01重量％至约5重量％（以SiO 2表示） （c）任选地，约0.01重量％至约10重量％的一种或多种螯合剂; （d）任选地，约0.01％至约80％重量的一种或多种水溶性有机助溶剂; 和（e）任选地，约0.01重量％至约1重量％的水溶性表面活性剂。

    Method for cleaning a silicon-based substrate without NH4OH vapor damage
    32.
    发明授权
    Method for cleaning a silicon-based substrate without NH4OH vapor damage 有权
    无NH4OH蒸汽损坏的硅基衬底的清洗方法

    公开(公告)号：US06589356B1

    公开(公告)日：2003-07-08

    申请号：US09676746

    申请日：2000-09-29

    申请人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

    发明人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

    IPC分类号： C23G102

    CPC分类号： H01L21/02046 ,  H01L21/02052

    摘要： A method for cleaning a silicon-based substrate in an ammonia-containing solution without incurring any damages to the silicon surface by NH4OH vapor is described. The method can be conducted by first providing a silicon-based substrate that has a silicon surface, then forming a silicon oxide layer of very small thickness, i.e. less than 10 Å, on the silicon surface. The silicon-based substrate can then be cleaned in an ammonia-containing solution without incurring any surface damage to the silicon, i.e. such as the formation of silicon holes. The present invention novel method can be carried out by either adding an additional oxidation tank before the SC-1 cleaning tank, or adding an oxidant to a quick dump rinse tank prior to the SC-1 cleaning process.

    摘要翻译： 描述了一种在含氨溶液中清洗硅基底物而不会由NH 4 OH蒸气对硅表面造成任何损害的方法。 该方法可以通过首先提供具有硅表面的硅基衬底，然后在硅表面上形成非常小的厚度（即，小于）的氧化硅层来进行。 然后可以在含氨溶液中清洗硅基基材，而不会对硅造成任何表面损伤，例如形成硅孔。 本发明的新方法可以通过在SC-1清洗槽之前添加另外的氧化槽，或在SC-1清洗过程之前向快速倾倒冲洗槽中加入氧化剂来进行。

    Method and apparatus for decomposition of silicon oxide layers for impurity analysis of silicon wafers
    35.
    发明授权
    Method and apparatus for decomposition of silicon oxide layers for impurity analysis of silicon wafers 失效
    用于硅晶片杂质分析的氧化硅层分解方法和装置

    公开(公告)号：US06475291B1

    公开(公告)日：2002-11-05

    申请号：US09557605

    申请日：2000-04-25

    申请人： Steve I. Petvai ,  Leslie Jane Bohnenkamp ,  Michael P. Buet

    发明人： Steve I. Petvai ,  Leslie Jane Bohnenkamp ,  Michael P. Buet

    IPC分类号： C23G102

    CPC分类号： G01N1/32 ,  Y10S134/902

    摘要： A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow. The flow mist droplets are drawn from the flow onto the cooled wafer surface providing a thin layer of liquid aqueous HF which reacts with the oxide layer at a faster rate than previously used HF vapor.

    摘要翻译： 描述了一种用于在硅晶片上分解氧化硅层的方法和装置，其采用将HF水的加热雾施加到冷却晶片表面。 该技术应用于使用扫描液滴对痕量杂质的硅晶片的分析，以在氧化硅分解后收集含有杂质的残余物。 与使用气相分解技术的现有技术相比，该新方法提供了氧化硅分解速率的一个数量级的增加。 此外，新颖的方法提供了比现有技术更好的控制和更安全地布置腐蚀性蒸气。 该装置包括装载有载气供应的活动圆顶和用于将由特殊设计的雾发生器产生的加热的HF水雾喷射到载气流中的装置。 流雾液滴从流中被抽吸到冷却的晶片表面上，提供与先前使用的HF蒸汽相比更快的速率与氧化物层反应的液体HF水溶液的薄层。

    Process for removing multiple coating film or adhering substance from substrate
    37.
    发明授权
    Process for removing multiple coating film or adhering substance from substrate 失效
    从基材上除去多个涂膜或粘附物质的方法

    公开(公告)号：US06197124B1

    公开(公告)日：2001-03-06

    申请号：US09152127

    申请日：1998-09-12

    申请人： Yasuharu Nakayama

    发明人： Yasuharu Nakayama

    IPC分类号： C23G102

    CPC分类号： C09D9/00 ,  B29C63/0013

    摘要： A process for removing a multiple coating film or an adhering substance and a layer of a cured adhesive agent which comprises a step of contacting a coated article (A) containing a multiple coating film having a lower coating layer formed on a substrate and an upper coating layer formed on the lower coating layer or an adhering substance (B) being allowed to adhere to a substrate by a layer of a cured adhesive agent with a mixture (C) comprising an acidic compound (a) and water as an essential component, the lower coating layer containing a cured binder resin having a chemical structure shown by the following chemical formula (1) and the layer of the cured adhesive agent containing a cured binder resin having a chemical structure shown by the above-mentioned chemical formula (1).

    摘要翻译： 一种用于除去多个涂膜或粘附物质的方法和固化的粘合剂层，该方法包括使含有形成在基材上的下涂层的多层涂膜的涂布物（A）与上涂层 通过固化粘合剂层与含有酸性化合物（a）和水作为必要成分的混合物（C）而使得在下涂层上形成的层或粘附物质（B）被粘附到基材上， 含有具有下述化学式（1）所示化学结构的固化粘合剂树脂的下涂层和含有上述化学式（1）所示化学结构的固化粘合剂树脂的固化粘合剂层。