公开(公告)号：US08742476B1

公开(公告)日：2014-06-03

申请号：US13685751

申请日：2012-11-27

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak Sekar ,  Brian Cronquist

IPC: H01L21/336 ,  H01L21/477

CPC classification number: H01L23/544 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device including: a first single crystal layer including first transistors, first alignment mark, and at least one metal layer, the at least one metal layer overlying the first single crystal layer and includes copper or aluminum; and a second layer overlying the metal layer; the second layer includes second transistors which include mono-crystal and are aligned to the first alignment mark with less than 40 nm alignment error, the mono-crystal includes a first region and second region which are horizontally oriented with respect to each other, the first region has substantially different dopant concentration than the second region.

Abstract translation: 一种半导体器件，包括：第一单晶层，包括第一晶体管，第一对准标记和至少一个金属层，所述至少一个金属层覆盖在所述第一单晶层上并且包括铜或铝; 和覆盖在金属层上的第二层; 第二层包括第二晶体管，其包括单晶并且与第一对准标记对准，具有小于40nm的对准误差，单晶包括相对于彼此水平取向的第一区域和第二区域， 区域具有与第二区域基本上不同的掺杂剂浓度。

公开(公告)号：US20140145272A1

公开(公告)日：2014-05-29

申请号：US13685751

申请日：2012-11-27

Applicant: MONOLITHIC 3D INC.

Inventor： Zvi Or-Bach ,  Deepak Sekar ,  Brian Cronquist

IPC: H01L23/544 ,  H01L27/092 ,  H01L27/088

CPC classification number: H01L23/544 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device including: a first single crystal layer including first transistors, first alignment mark, and at least one metal layer, the at least one metal layer overlying the first single crystal layer and includes copper or aluminum; and a second layer overlying the metal layer; the second layer includes second transistors which include mono-crystal and are aligned to the first alignment mark with less than 40 nm alignment error, the mono-crystal includes a first region and second region which are horizontally oriented with respect to each other, the first region has substantially different dopant concentration than the second region.

Abstract translation: 一种半导体器件，包括：第一单晶层，包括第一晶体管，第一对准标记和至少一个金属层，所述至少一个金属层覆盖在所述第一单晶层上并且包括铜或铝; 和覆盖在金属层上的第二层; 第二层包括第二晶体管，其包括单晶并且与第一对准标记对准，具有小于40nm的对准误差，单晶包括相对于彼此水平取向的第一区域和第二区域， 区域具有与第二区域基本上不同的掺杂剂浓度。