公开(公告)号：US08030154B1

公开(公告)日：2011-10-04

申请号：US12849223

申请日：2010-08-03

申请人： Ahmet S. Ozcan ,  Christian Lavoie ,  Zhen Zhang ,  Bin Yang

发明人： Ahmet S. Ozcan ,  Christian Lavoie ,  Zhen Zhang ,  Bin Yang

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823864 ,  H01L29/7843

摘要： In one embodiment, a method of forming a semiconductor device is provided that includes providing a gate structure on a semiconductor substrate. Sidewall spacers may be formed adjacent to the gate structure. A metal semiconductor alloy may be formed on the upper surface of the gate structure and on an exposed surface of the semiconductor substrate that is adjacent to the gate structure. An upper surface of the metal semiconductor alloy is converted to an oxygen-containing protective layer. The sidewall spacers are removed using an etch that is selective to the oxygen-containing protective layer. A strain-inducing layer is formed over the gate structure and the semiconductor surface, in which at least a portion of the strain-inducing layer is in direct contact with the sidewall surface of the gate structure. In another embodiment, the oxygen-containing protective layer of the metal semiconductor alloy is provided by a two stage annealing process.

摘要翻译： 在一个实施例中，提供了一种形成半导体器件的方法，其包括在半导体衬底上提供栅极结构。 侧壁间隔件可以与栅极结构相邻地形成。 可以在栅极结构的上表面和与栅极结构相邻的半导体衬底的暴露表面上形成金属半导体合金。 将金属半导体合金的上表面转化为含氧保护层。 使用对含氧保护层具有选择性的蚀刻来去除侧壁间隔物。 应变诱导层形成在栅极结构和半导体表面上，其中应变诱导层的至少一部分与栅极结构的侧壁表面直接接触。 在另一个实施方案中，金属半导体合金的含氧保护层通过两阶段退火工艺提供。