公开(公告)号：US20080038527A1

公开(公告)日：2008-02-14

申请号：US11596188

申请日：2005-05-11

申请人： Masahiro Akiyama ,  Takahiko Kurosawa ,  Hisashi Nakagawa ,  Atsushi Shiota

发明人： Masahiro Akiyama ,  Takahiko Kurosawa ,  Hisashi Nakagawa ,  Atsushi Shiota

IPC分类号： B05D3/02 ,  B32B27/28 ,  C08G77/04

CPC分类号： H01L21/02126 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/31633

摘要： A method of forming an organic silica film capable of efficiently curing a coating at a lower dose of electron beams in a shorter time at a lower temperature and forming a film which may be suitably used as an interlayer dielectric for semiconductor devices and the like and exhibits a low relative dielectric constant and excellent mechanical strength, adhesion, plasma resistance, and chemical resistance, a film-forming composition used for the method, an organic silica film obtained by the method, a wiring structure including the organic silica film, and a semiconductor device including the wiring structure. A method of forming an organic silica film according to the invention includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying electron beams.

摘要翻译： 一种形成有机二氧化硅膜的方法，其能够在较低温度下在较短时间内以较低剂量的电子束有效地固化涂层，并形成适合用作半导体器件等的层间电介质的膜，并且显示出 低相对介电常数和优异的机械强度，粘附性，等离子体电阻和耐化学性，用于该方法的成膜组合物，通过该方法获得的有机二氧化硅膜，包含有机二氧化硅膜的布线结构和半导体 装置包括布线结构。 根据本发明的形成有机二氧化硅膜的方法包括在a上形成包含具有-Si-O-Si-结构和-Si-CH 2 -Si-结构的硅化合物的涂层 衬底，加热涂层，并通过施加电子束固化涂层。

公开(公告)号：US20050042464A1

公开(公告)日：2005-02-24

申请号：US10960948

申请日：2004-10-12

申请人： Atsushi Shiota ,  Kouji Sumiya

发明人： Atsushi Shiota ,  Kouji Sumiya

IPC分类号： B32B25/20 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76828 ,  Y10T428/31663

摘要： A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si—C—Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

公开(公告)号：US06787193B2

公开(公告)日：2004-09-07

申请号：US10165324

申请日：2002-06-10

申请人： Eiji Hayashi ,  Atsushi Shiota ,  Michinori Nishikawa ,  Kinji Yamada

发明人： Eiji Hayashi ,  Atsushi Shiota ,  Michinori Nishikawa ,  Kinji Yamada

IPC分类号： B32B1800

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/31695 ,  Y02P20/544 ,  Y10T428/31663

摘要： A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

摘要翻译： 一种形成二氧化硅膜的方法，其包括在超临界介质中处理膜，所述膜包含（A）硅氧烷化合物和（B）选自（B-1）中的至少一种，与 具有或分散在成分（A）中，沸点或分解温度为150-500℃，和（B-2）表面活性剂。 该二氧化硅膜的机械强度优异，介电常数为2.2以下，因此可用作半导体装置等的电介质膜。

公开(公告)号：US06406794B1

公开(公告)日：2002-06-18

申请号：US09778822

申请日：2001-02-08

申请人： Atsushi Shiota ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Makoto Sugiura ,  Toshiyuki Akiike ,  Keiji Konno ,  Tadahiro Shiba ,  Kohei Goto ,  Kinji Yamada

发明人： Atsushi Shiota ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Makoto Sugiura ,  Toshiyuki Akiike ,  Keiji Konno ,  Tadahiro Shiba ,  Kohei Goto ,  Kinji Yamada

IPC分类号： B32B904

CPC分类号： C08J5/18 ,  C08G2650/58 ,  C08J2371/00 ,  C08L71/00 ,  C08L71/02 ,  C09D171/02 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663 ,  C08L83/00 ,  C08L2666/14

摘要： A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2  (1) R2Si(OR1)3  (2) Si(OR1)4  (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent. The composition exhibits superior storage stability, is capable of producing a low-density film having a small relative dielectric constant, low water absorption properties, and small vacant space size, and is thus suitable as an interlayer dielectric material in the manufacture of semiconductor devices.

摘要翻译： 一种成膜组合物，其包含：（A）至少一种选自由下式（1）表示的化合物，下式（2）所示的化合物和下述化合物的硅烷化合物 式（3）和这些化合物的水解缩合物：其中R1，R2和R3各自表示一价有机基团，（B）由式（PEO）p-（PPO）q-（PEO）r表示的聚醚， 其中PEO表示聚环氧乙烷单元，PPO表示聚环氧丙烷单元，p为2〜200的数，q为20〜80的数，r为2〜200的数，（C）有机溶剂 。 该组合物表现出优异的储存稳定性，能够生产具有小的相对介电常数，低吸水性和小的空间空间尺寸的低密度膜，因此适合作为制造半导体器件的层间绝缘材料。