公开(公告)号：US20090209075A1

公开(公告)日：2009-08-20

申请号：US12429951

申请日：2009-04-24

Applicant: Cheng-Chi LIN ,  Shin Su ,  Chein-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

Inventor： Cheng-Chi LIN ,  Shin Su ,  Chein-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC: H01L21/336

CPC classification number: H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract translation: 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US07525153B2

公开(公告)日：2009-04-28

申请号：US11399427

申请日：2006-04-07

Applicant: Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

Inventor： Cheng-Chi Lin ,  Shin Su ,  Chien-Wen Chu ,  Shih-Chin Lien ,  Chin-Pen Yeh

IPC: H01L29/94

CPC classification number: H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract translation: 本发明公开了一种横向双扩散金属氧化物半导体晶体管（LDMOS）及其制造方法。 LDMOS包括衬底，第一阱，漏极，第二阱和源极。 衬底包括第一导电掺杂剂。 第一阱包括第二导电掺杂剂并形成在衬底的一部分中，并且漏极位于第一阱中。 第二阱包括第一导电掺杂剂并且形成在衬底的另一部分中，并且源位于第二阱中。 源包括从衬底的顶表面向下延伸的轻掺杂区域和重掺杂区域。 轻掺杂区域的深度大于重掺杂区域的深度。

公开(公告)号：US20080315308A1

公开(公告)日：2008-12-25

申请号：US11767205

申请日：2007-06-22

Applicant: Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

Inventor： Hsueh-I Huang ,  Chien-Wen Chu ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0847 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

Abstract: A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

Abstract translation: 提供了横向双扩散MOS器件。 该装置包括：具有第一导电类型的第一阱和具有布置在衬底中并且彼此相邻的第二导电类型的第二阱; 漏极和分别设置在第一和第二阱中的具有第一导电类型的源极区域; 设置在源极和漏极区域之间的第一阱上的场氧化物层（FOX）; 设置在延伸到FOX的源极和漏极区域之间的第二阱上的栅极导电层; 在所述基板和所述栅极导电层之间的栅极介电层; 在栅极导电层的一部分下方的第一阱中具有第一导电类型的掺杂区域和连接到漏极区域的FOX。 在掺杂区域和源极区域之间的第二阱中限定沟道区域。

公开(公告)号：US06435178B1

公开(公告)日：2002-08-20

申请号：US09477483

申请日：2000-01-06

Applicant: Cheng-Chi Lin

Inventor： Cheng-Chi Lin

IPC: B63C1102

CPC classification number: B63C11/16 ,  B63C11/207

Abstract: A swim mask apparatus having a mask equipped with a floating air-suction device is provided. The mask includes a plurality of straps extending from two lateral sides thereof to firmly attach the mask to a wearer's head and thereby provide watertight protection for the wearer's eyes and nose. The mask is provided with a one-way exhaust valve and a one-way sniffing valve. The floating air-suction device includes a float and an air hose extending therefrom. A terminal end of the air hose is connected to the one-way sniffing valve to form an inhalation airway between the float and the mask. The buoyancy of the float normally maintains the open end of the air hose coupled thereto above the water surface. When it is pulled sufficiently below the water surface by the air hose, the buoyant float is resistive to the displacement to the extent that compressing members formed therein constrictively engage the end of the air hose to prevent water from entering therethrough.

Abstract translation: 提供一种具有装有浮动吸气装置的面罩的游泳面罩装置。 面罩包括从其两个侧面延伸的多个带子，以将面罩牢固地附接到穿戴者的头部，从而为佩戴者的眼睛和鼻子提供防水保护。 面罩设有单向排气阀和单向嗅觉阀。 浮动吸气装置包括浮子和从其延伸的空气软管。 空气软管的终端连接到单向嗅探阀，以在浮子和面罩之间形成吸入气道。 浮子的浮力通常保持在水面上方连接到其上的空气软管的开口端。 当通过空气软管将其充分地拉到水面下方时，浮力浮子抵抗位移，使得形成在其中的压缩构件紧密地接合空气软管的端部以防止水从其中进入。