公开(公告)号：US20080300031A1

公开(公告)日：2008-12-04

申请号：US12035294

申请日：2008-02-21

Applicant: Choong-Hyoun Cho ,  Won-Seok Joo ,  Hyo-Simg Park ,  Seung-Geun Lim

Inventor： Choong-Hyoun Cho ,  Won-Seok Joo ,  Hyo-Simg Park ,  Seung-Geun Lim

IPC: H04M1/02

CPC classification number: H04M1/0216 ,  H04M1/022

Abstract: A portable terminal comprising first and second bodies, and a hinge unit configured to fold or unfold the first and second bodies in a rotational manner.

Abstract translation: 一种包括第一和第二主体的便携式终端，以及被配置为以旋转方式折叠或展开第一和第二主体的铰链单元。

公开(公告)号：US20080084401A1

公开(公告)日：2008-04-10

申请号：US11865566

申请日：2007-10-01

Applicant: Won-Seok Joo ,  Seung-Geun Lim ,  Young-Joong Kim

Inventor： Won-Seok Joo ,  Seung-Geun Lim ,  Young-Joong Kim

IPC: G06F3/041

CPC classification number: H04M1/22 ,  H04M1/0237 ,  H04M2250/22

Abstract: An input device and mobile terminal having the same is provided. The input device includes a housing having at least one transmissive region, a touch board located substantially adjacent the housing, the touch board being configured to sense a touch applied to the housing, a plurality of light emitting units, each light emitting unit being at least partially located in or on the touch board, and a controller configured to selectively turn on at least one of the light emitting units to be visible through the at least one transmissive region when the touch board senses a touch applied to the housing.

Abstract translation: 提供了具有该输入装置和移动终端的输入装置和移动终端。 所述输入装置包括具有至少一个透射区域的壳体，基本上邻近所述壳体定位的触摸板，所述触摸板被配置为感测施加于所述壳体的触摸，多个发光单元，每个发光单元至少为 部分地位于触摸板中或触摸板上，以及控制器，其被配置为当触摸板感测施加到壳体的触摸时，通过至少一个透射区域选择性地将至少一个发光单元接通。

公开(公告)号：US5747372A

公开(公告)日：1998-05-05

申请号：US692133

申请日：1996-08-05

Applicant: Geun Lim

Inventor： Geun Lim

IPC: H01L21/76 ,  H01L21/334 ,  H01L21/336 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/6659 ,  H01L21/76216

Abstract: A semiconductor device includes a semiconductor substrate having low impurities of a first conductivity type including a field region and an active region, a first conductivity type region of high impurities at the field region of the semiconductor substrate, a first insulation film on the first conductivity type region of high impurities, a gate electrode at the active region of the semiconductor substrate, a second conductivity type region of high impurities on a central region of the semiconductor substrate between the gate electrode and the first insulation film, and second conductivity type regions of low impurities between the gate electrode and the second conductive type region of high impurities, and between the first insulation film and the second conductivity type region of high impurities.

Abstract translation: 半导体器件包括具有包括场区和有源区的第一导电类型的低杂质的半导体衬底，半导体衬底的场区的高杂质的第一导电类型区，第一导电类型的第一绝缘膜 高杂质区域，在半导体衬底的有源区上的栅电极，在栅电极和第一绝缘膜之间的半导体衬底的中心区域上具有高杂质的第二导电类型区域，以及第二导电类型区域 栅电极与高杂质的第二导电类型区之间以及高杂质的第一绝缘膜与第二导电类型区之间的杂质。