摘要:
A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
摘要:
A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
摘要:
A lead frame and a semiconductor device wherein a through hole is formed in the center of a semiconductor chip-mounting surface of a chip pad at the center of the lead frame, the through hole being tapered or being one which corresponds to a surface area that is greater on the surface of the chip-mounting surface of the chip pad than on the surface of the side opposite to the chip-mounting surface thereof. This prevents the occurrence of cracks in the sealing plastic portion in the step of reflow soldering of the lead frame to the substrate.
摘要:
The plastic encapsulated semiconductor device according to the present invention has a semiconductor chip, leads, and members for electrically connecting these parts to each other. A part of leads, the semiconductor chip and the connecting members are encapsulated with a plastic to form a package. The plate type plastic fins formed on the surface of and integrally with the package are divided in two directions perpendicular to each other thereby forming, for example, rows and columns of fins or fin segments, on the package surface. Therefore, the semiconductor device according to the present invention can be molded easily by a transfer molding. It has a high reliability with respect to the prevention of cracks in the plastic, and a low thermal resistance, and is most suitably used to obtain a high-density package mounting structure.
摘要:
A lead frame having a plurality of inner leads and outer leads, said outer leads being subjected to surface treatment for improving solder wettability at an end portion and to sruface treatment for suppressing solder wettability at least at a portion neighboring to the end portion, or said outer leads being bent 4 times or more, is effective for improving thermal fatigue life and reliability when applied to a semi-conductor device.
摘要:
A lead frame and an electronic device incorporating the lead frame wherein the lead frame includes a chip support and a plurality of leads arranged around the chip support with each of the plurality of leads having one end disposed proximate to the chip support. The one end of at least one of the plurality of leads includes a first lead portion extending in a direction toward the chip support and a second lead portion contiguous with the first lead portion. The second lead portion extends in a direction away from the chip support so that the one of the lead has a bent shape.
摘要:
A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.
摘要:
Prevention of disconnection of a bonding wire resulting from adhesive interface delamination between a resin and a leadframe, and improvement of joint strength of the resin and the leadframe are achieved in a device manufactured by a low-cost and simple processing. A boss is provided on a source lead by a stamping processing, and a support pillar is provided in a concave portion on a rear side of the source lead in order to prevent ultrasonic damping upon joining the bonding wire onto the boss, so that an insufficiency of the joint strength between the bonding wire and the source lead is prevented. Also, a continuous bump is provided on the boss so as to surround a joint portion between the source lead and the bonding wire, so that disconnection of the bonding wire resulting from delamination between the resin and the source lead is prevented.
摘要:
A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.
摘要:
A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.