Bilayer carbon overcoating for magnetic data storage disks and magnetic head/slider constructions
    41.
    发明授权
    Bilayer carbon overcoating for magnetic data storage disks and magnetic head/slider constructions 失效
    用于磁数据存储盘和磁头/滑块结构的双层碳覆盖涂层

    公开(公告)号:US06524687B2

    公开(公告)日:2003-02-25

    申请号:US09777191

    申请日:2001-02-05

    IPC分类号: G11B5127

    摘要: A magnetic head/slider construction and a magnetic data recording disk, as well as a method for fabricating the magnetic head/slider construction and the magnetic data storage disk. To practice the method, there is formed over the air bearing surface of each of a magnetic head/slider construction and a magnetic data storage disk a wear resistant carbon layer. Over each of the wear resistant carbon layers is then formed a lubricating carbon layer. The lubricating carbon layers may be formed in-situ upon the wear resistant carbon layers. The wear resistant carbon layers may be formed from nitrogenated wear resistant carbon materials having a nitrogen content of from about 15 to about 30 atomic percent and hydrogenated wear resistant carbon materials having a hydrogen content of from about 15 to about 25 atomic percent. The lubricating carbon layer is preferably formed from a hydrogenated lubricating carbon material having a hydrogen content of from about 30 to about 40 atomic percent. Through the method, there is formed magnetic head/slider constructions and magnetic data recording disks simultaneously possessing improved wear resistance characteristics and improved lubricating properties.

    摘要翻译: 磁头/滑块结构和磁数据记录盘,以及用于制造磁头/滑块结构和磁数据存储盘的方法。 为了实现该方法,在磁头/滑块结构和磁数据存储盘的每个的空气轴承表面上形成耐磨碳层。 然后在每个耐磨碳层上形成润滑碳层。 润滑碳层可以在耐磨碳层上原位形成。 耐磨碳层可以由具有约15至约30原子%的氮含量的氮化耐磨碳材料和氢含量为约15至约25原子%的氢化耐磨碳材料形成。 润滑碳层优选由氢含量为约30至约40原子%的氢化润滑碳材料形成。 通过该方法,形成磁头/滑块结构和磁数据记录盘,同时具有改善的耐磨特性和改善的润滑性能。

    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
    42.
    发明授权
    Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient 失效
    具有增强磁阻(MR)系数的巨磁阻(GMR)传感器元件

    公开(公告)号:US06292336B1

    公开(公告)日:2001-09-18

    申请号:US09408703

    申请日:1999-09-30

    IPC分类号: G11B5127

    摘要: A method for forming a giant magnetoresistive (GMR) sensor element, and a giant magnetoresistive (GMR) sensor element formed in accord with the method. In accord with the method, there is first provided a substrate. There is then formed over the substrate a seed layer formed of a magnetoresistive (MR) resistivity sensitivity enhancing material selected from the group consisting or nickel-chromium alloys and nickel-iron-chromium alloys. There is then formed over the seed layer a nickel oxide material layer. Finally, there is then formed over the nickel oxide material layer a free ferromagnetic layer separated from a pinned ferromagnetic layer in turn formed thereover by a non-magnetic conductor spacer layer, where the pinned ferromagnetic layer in turn has a pinning material layer formed thereover. The method contemplates a giant magnetoresistive (GMR) sensor element formed in accord with the method. The nickel oxide material layer provides the giant magnetoresistive (GMR) sensor element with an enhanced magnetoresistive (MR) resistivity sensitivity.

    摘要翻译: 一种用于形成巨磁阻(GMR)传感器元件的方法,以及根据该方法形成的巨磁阻(GMR)传感元件。 根据该方法,首先提供基板。 然后在衬底上形成由选自镍铬合金和镍 - 铁 - 铬合金的磁阻(MR)电阻率敏感度增强材料形成的晶种层。 然后在种子层上形成氧化镍材料层。 最后,然后在氧化镍材料层上形成与被钉扎的铁磁性层分离的自由铁磁层,然后由非磁性导体间隔层形成,其中钉扎的铁磁层又形成有钉扎材料层。 该方法考虑了根据该方法形成的巨磁阻(GMR)传感器元件。 氧化镍材料层提供具有增强的磁阻(MR)电阻率敏感性的巨磁阻(GMR)传感器元件。

    Chemical approach to develop lift-off photoresist structure and passivate MR sensor
    43.
    发明授权
    Chemical approach to develop lift-off photoresist structure and passivate MR sensor 失效
    化学方法开发剥离光致抗蚀剂结构和钝化MR传感器

    公开(公告)号:US06274025B1

    公开(公告)日:2001-08-14

    申请号:US09332433

    申请日:1999-06-14

    IPC分类号: C25D502

    摘要: A method to form a passivation layer over a MR Sensor so that the passivation layer defines the track width. The passivation layer is formed simultaneously with the development of the lift off structure in a novel developing/oxidizing solution that oxidizes the MR sensor and develops the photoresist. The passivation layer is an electrical insulator that prevents sensor current from shunting through the overspray of the leads and a heat conductor to allow MR heat to dissipate through the overspray. The method comprises: spinning-on and printing a lift-off photoresist structure over the MR sensor. Next, the lift-off photoresist structure is developed. The MR sensor is anodized in a developing/oxidizing solution to: (1) remove portions of the lower photoresist and (2) to form a (e.g., thin NiFeO) passivation layer on the MR layer at least partially under the upper photoresist layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure. Then, a lead layer is deposited over the passivation layer and MR sensor. The lift-off structure is removed.

    摘要翻译: 在MR传感器上形成钝化层的方法,使得钝化层限定轨道宽度。 钝化层与氧化MR传感器并显影光致抗蚀剂的新型显影/氧化溶液中的剥离结构的发展同时形成。 钝化层是电绝缘体,其防止传感器电流通过引线的过度喷射和热导体分流,以允许MR热量通过过喷器消散。 该方法包括:在MR传感器上旋转并打印剥离光致抗蚀剂结构。 接下来,开发剥离光致抗蚀剂结构。 将MR传感器在显影/氧化溶液中进行阳极氧化,以:(1)去除下部光致抗蚀剂的部分,和(2)在MR层上至少部分地在上部光致抗蚀剂层下形成(例如,薄的NiFeO)钝化层。 钝化层被蚀刻以除去未被剥离结构覆盖的钝化层。 然后,在钝化层和MR传感器上沉积引线层。 剥离结构被去除。

    Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration
    44.
    发明授权
    Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
    具有反并联交换配置的带状磁阻(SMR)和双条磁阻(DSMR)头的制造方法

    公开(公告)号:US06204071B1

    公开(公告)日:2001-03-20

    申请号:US09408491

    申请日:1999-09-30

    IPC分类号: H01L2100

    摘要: A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.

    摘要翻译: 用于形成纵向磁偏置双条磁阻(DSMR)传感器元件的方法包括形成第一图案化磁阻(MR)层。 用限定第一磁阻(MR)层的轨道宽度的第一对叠层接触图案化磁阻(MR)层的相对端,每个堆叠包括第一抗铁磁(AFM)层和第一 铅层。 然后在存在纵向外部磁场的情况下退火该器件。 接下来,在先前的结构之上形成第二图案化磁阻(MR)层。 用限定第二图案化磁阻(MR)层的第二磁道宽度的第二对叠层接触第二图案化磁阻(MR)层的相对端。 第二对堆叠中的每一个包括由金属,铁磁(FM)层,第二抗铁磁(AFM)层和第二引线层组成的间隔层。 然后在存在第二纵向外部磁场的情况下退火该器件。

    Merged Battery Cell with Interleaved Electrodes
    46.
    发明申请
    Merged Battery Cell with Interleaved Electrodes 有权
    合并电池与交错电极

    公开(公告)号:US20130224533A1

    公开(公告)日:2013-08-29

    申请号:US13406986

    申请日:2012-02-28

    摘要: A battery having the electrodes of multiple cell types interleaved to prevent thermal runaway by cooling a shorted region between electrodes. The battery includes multiple cell types where each cell type has multiple electrodes a first polarity. The electrodes of each of the cell types share a pair of the common electrodes having a second polarity. The electrodes of the multiple cell types and the multiple common electrodes are interleaved such that if the electrodes of the multiple cell types and the adjacent common electrodes of one or more cell types short together, the current within the shorted cells is sufficiently small to prevent thermal runaway and the electrodes of the adjacent cells of the other cell types of the first polarity and the common electrodes of the second polarity not having short circuits provide heat sinking for the heat generated by the short circuit to prevent thermal runaway.

    摘要翻译: 电池具有交错的多个电池类型的电极,以通过冷却电极之间的短路区域来防止热失控。 电池包括多种电池类型,其中每种电池类型具有多个电极为第一极性。 每个电池类型的电极共享具有第二极性的一对公共电极。 多个单元类型的电极和多个公共电极被交错,使得如果多个单元类型的电极和一个或多个单元类型的相邻公共电极在一起短路,则短路单元内的电流足够小以防止热 第一极性的其他电池类型的相邻电池的电极和不具有短路的第二极性的公共电极的电极为由短路产生的热量提供散热以防止热失控。

    Method to print photoresist lines with negative sidewalls
    48.
    发明申请
    Method to print photoresist lines with negative sidewalls 失效
    打印具有负侧壁的光刻胶线的方法

    公开(公告)号:US20070042299A1

    公开(公告)日:2007-02-22

    申请号:US11588574

    申请日:2006-10-27

    IPC分类号: G03C5/00

    摘要: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.

    摘要翻译: 从负极或正音色化学放大抗蚀剂产生负的壁角是非常困难的,特别是通过电子束光刻。 现在已经通过首先以常规方式形成光致抗蚀剂基座,随后用电子暴露而克服了这个问题。 然后,给出第二次开发处理。 这导致从侧壁去除附加材料,所述去除在基底处至少在基座的顶表面处最大,导致负斜面的侧壁。 还讨论了该方法在用于形成用于垂直磁性写入器的极尖的处理中的应用。

    Device with thermoelectric cooling
    50.
    发明授权
    Device with thermoelectric cooling 有权
    热电冷却装置

    公开(公告)号:US06987650B2

    公开(公告)日:2006-01-17

    申请号:US10443358

    申请日:2003-05-22

    摘要: Increasing the output signal from CPP GMR devices by increasing the read current has not previously been considered an option because it would make the device run too hot. This problem has been overcome by using, for the upper and lower leads, materials that differ significantly in their thermoelectric powers. Thus, when DC is passed through the device, from − to + TEP leads, hot and cold junctions are formed and heat is transferred from the micro-device into the leads, resulting in a net local cooling of the device which enables it to operate at higher power. For a GMR device, this translates to a larger output voltage, making it easier, more sensitive, and more reliable to use.

    摘要翻译: 增加读取电流从CPP GMR器件增加输出信号以前从未被认为是一个选项,因为它会使器件运行得太热。 对于上,下引线,通过使用热电功率显着不同的材料来克服这个问题。 因此,当DC通过器件时,从 - 至+ TEP引线形成热连接点和热接头,并且热量从微器件传输到引线中,导致器件的局部局部冷却,使其能够操作 在更高的权力。 对于GMR器件,这转化为更大的输出电压,使其更容易,更灵敏,更可靠使用。