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    Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes
    41.
    发明授权
    Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes 失效
    在制造多层金属工艺的剥离结构中使用可解聚聚合物

    公开(公告)号：US4519872A

    公开(公告)日：1985-05-28

    申请号：US619516

    申请日：1984-06-11

    Applicant: Herbert R. Anderson, Jr. ,  Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Herbert R. Anderson, Jr. ,  Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: H01L21/3205 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/04 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC classification number: H01L21/7688 ,  G03F7/039 ,  H01L21/0272 ,  H05K3/048 ,  Y10S438/951

    Abstract: An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.

    Abstract translation: 通过采用由在热或辐射的影响下经历清洁解聚的聚合物形成的剥离层，并且允许快速和无残留地释放“消耗性掩模”，改进了用于多层金属结构在集成电路制造中的剥离过程， 。 通过将本发明的剥离层施加在固化的聚合物膜上或预先沉积在有机或无机基底上的氧RIE阻挡层上，随后再涂覆有辐射敏感的另一个屏障，形成嵌入式互连冶金系统 抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的溅射蚀刻将图像复制到屏障中，随后通过橡皮布金属蒸发随后通过氧反应离子蚀刻沉积到基底中。 最后通过在剥离层的解聚温度下进行短暂热处理，并进行短暂的溶剂浸泡。

    Method of forming patterned polyimide films
    47.
    发明授权
    Method of forming patterned polyimide films 失效
    形成图案化聚酰亚胺膜的方法

    公开(公告)号：US5470693A

    公开(公告)日：1995-11-28

    申请号：US837505

    申请日：1992-02-18

    Applicant: Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    Inventor： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    IPC: H01L21/30 ,  G03F7/00 ,  G03F7/09 ,  H01L21/306 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  G03F7/26

    CPC classification number: G03F7/0035 ,  G03F7/094 ,  H01L21/31144 ,  H01L21/76804

    Abstract: A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

    Abstract translation: 公开了通过光致抗蚀剂掩模使用聚酰亚胺前体的湿显影制造图案化聚酰亚胺膜的方法。 通过从聚酰胺酸前体（通常来源于3,3'，4,4'-联苯四羧酸二酐 - 对苯二胺（BPDA-PDA））开始形成低热膨胀系数（TCE）聚酰亚胺图案。 产生聚酰亚胺图案，完全保留聚酰亚胺骨架化学的固有性质，并在低TCE聚酰亚胺电介质中形成冶金图案。

    Scratch resistant recording materials for electroerosion printing not requiring a lubricant overcoat
    48.
    发明授权
    Scratch resistant recording materials for electroerosion printing not requiring a lubricant overcoat 失效
    用于电腐蚀印刷的防刮擦记录材料不需要润滑剂外涂层

    公开(公告)号：US4554562A

    公开(公告)日：1985-11-19

    申请号：US567297

    申请日：1983-12-30

    Applicant: Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

    Inventor： Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

    IPC: B41M5/24 ,  B41N1/14 ,  G01D15/34 ,  B05D5/12 ,  B32B7/00

    CPC classification number: B41M5/245 ,  Y10T428/24893 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/3154

    Abstract: Electroerosion recording materials of superior scratch resistance are provided without the need for a lubricant overcoat by incorporating a hard, lubricating hydrophobic polymer layer between the support and the removable, thin conductive layer to reduce plastic deformation of the support under stylus writing pressure. The intermediate polymer layer provides a highly adhering surface for the overlying aluminum film and contains graphite fluoride and/or fluorocarbon resins such as Teflon.RTM. and hard particles such as silica. The materials may be used in various printing processes including making directly readable images, direct negatives and wear resistant offset printing masters.

    Abstract translation: 通过在支撑体和可移除的薄导电层之间并入硬的润滑的疏水性聚合物层，在不需要润滑剂外涂层的情况下，提供了优异的耐刮擦性的电蚀记录材料，以减少支架在笔写压力下的塑性变形。 中间聚合物层为覆盖的铝膜提供高度粘附的表面，并且包含氟化石墨氟化物和/或氟碳树脂如Teflon TM和硬颗粒如二氧化硅。 这些材料可以用于各种印刷工艺中，包括制造直接可读的图像，直接的底片和耐磨胶版印刷主机。

    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    49.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效

    公开(公告)号：US4493855A

    公开(公告)日：1985-01-15

    申请号：US452549

    申请日：1982-12-23

    Applicant: Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: H01L21/302 ,  G03F7/09 ,  H01L21/3065 ,  H01L21/3205 ,  B05D3/06

    CPC classification number: G03F7/094

    Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

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