公开(公告)号：US20050077537A1

公开(公告)日：2005-04-14

申请号：US10957704

申请日：2004-10-05

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。