Abstract:
A semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes an interlayer insulation layer pattern, a metal wire pattern exposed by a passage formed by a via hole formed in the interlayer insulation layer pattern to input and output an electrical signal, and a plated layer pattern directly contacting the metal wire pattern and filling the via hole. The method includes forming an interlayer insulation layer having a metal wire pattern to input and output an electrical signal formed therein, forming a via hole to define a passage that extends through the interlayer insulation layer until at least a part of the metal wire pattern is exposed, and forming a plated layer pattern to fill the via hole and to directly contact the metal wire pattern by using the metal wire pattern exposed through the via hole as a seed metal layer.
Abstract:
Disclosed is a digital sampling rate converter for compensating for a drop of an in-band signal, the digital sampling rate converter including a CIC (Cascaded Integrator-Comb) decimator for performing a decimation operation at a first decimation ratio based on an overall decimation ratio, for an input signal; a sub-decimator for performing a decimation operation at a second decimation ratio for a signal output from the CIC decimator; and a compensation unit for performing at least two multiplication operations and two addition operations with respect to a signal output from the sub-decimator using a lowest operation clock frequency in an assigned band.