摘要:
Electric Grid Analytics Learning Machine, EGALM, is a machine learning based, “brutally empirical” analysis system for use in all energy operations. EGALM is applicable to all aspects of the electricity operations from power plants to homes and businesses. EGALM is a data-centric, computational learning and predictive analysis system that uses open source algorithms and unique techniques applicable to all electricity operations in the United States and other foreign countries.
摘要:
The disclosed subject matter provides systems and methods for allocating resources within an infrastructure, such as an electrical grid, in response to changes to inputs and output demands on the infrastructure, such as energy sources and sinks. A disclosed system includes one or more processors, each having respective communication interfaces to receive data from the infrastructure, the data comprising infrastructure network data, one or more software applications, operatively coupled to and at least partially controlling the one or more processors, to process and characterize the infrastructure network data; and a display, coupled to said one or more processors, for visually presenting a depiction of at least a portion of the infrastructure including any changes in condition thereof, and one or more controllers in communication with the one or more processors, to manage processing of the resource, wherein the resource is obtained and/or distributed based on the characterization of said real time infrastructure data.
摘要:
A dual surfaced mid-reflector employs two independently shaped faceted faces to direct radiant energy from separate heater lamp arrays to a substrate or substrate support to be heated. A dual surfaced mid-reflector can also be employed in conjunction with a peripheral cylindical reflect or and a central cylindrical reflector to further direct radiation to specific regions on a substrate or substrate support. In addition, a dual surfaced mid-reflector can also be employed in conjunction with heater lamps where the radiation of individual lamps is further directed by focusing reflectors or dispersive reflectors.
摘要:
A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.
摘要:
An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要:
A method and apparatus for uniformly ramping the temperatures of a wafer and a susceptor using a first heat source primarily directed at the wafer and a second heat source primarily directed at the susceptor while keeping the wafer at approximately the same temperature as the susceptor but measuring only the temperature of the susceptor. The method comprises the steps of: determining and storing a plurality of steady-state temperatures of the susceptor as a function of the total power provided to the first heat source and the second heat source; ramping the susceptor from an initial temperature to a final temperature; and heating the wafer from the initial temperature to the final temperature, wherein the power to the first heat source is determined from the susceptor's temperature and the plurality of steady-state temperatures of the wafer and susceptor as a function of total power.
摘要:
An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.
摘要:
The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要:
A wafer processing reactor having an input manifold to enable control of a process gas flow profile over a wafer that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer.
摘要:
Techniques for evaluating the accuracy of a predicted effectiveness of an improvement to an infrastructure include collecting data, representative of at least one pre-defined metric, from the infrastructure during first and second time periods corresponding to before and after a change has been implemented, respectively. A machine learning system can receive compiled data representative of the first time period and generate corresponding machine learning data. A machine learning results evaluator can empirically analyze the generated machine learning data. An implementer can implement the change to the infrastructure based at least in part on the data from a machine learning data outputer. A system performance improvement evaluator can compare the compiled data representative of the first time period to that of the second time period to determine a difference, if any, and compare the difference, if any, to a prediction based on the generated machine learning data.