Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method
    41.
    发明申请
    Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method 有权
    用于计量,计量方法和器件制造方法的基板和图案化装置

    公开(公告)号:US20140233031A1

    公开(公告)日:2014-08-21

    申请号:US14261879

    申请日:2014-04-25

    Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

    Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标,用于测量覆盖。 一些较小的目标分布在较大目标之间的位置,而其他小目标则放置在与大目标位置相同的位置。 通过比较在相同位置使用小目标和大目标测量的值,可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内,而小目标则分布在产品区域内。

    Method and system for determining information about a target structure

    公开(公告)号:US12061421B2

    公开(公告)日:2024-08-13

    申请号:US17629053

    申请日:2020-07-17

    CPC classification number: G03F7/70633

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

    Method for inferring a local uniformity metric

    公开(公告)号:US11886125B2

    公开(公告)日:2024-01-30

    申请号:US17800346

    申请日:2021-02-02

    CPC classification number: G03F7/70625

    Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

    Recipe selection based on inter-recipe consistency

    公开(公告)号:US11703772B2

    公开(公告)日:2023-07-18

    申请号:US17124758

    申请日:2020-12-17

    CPC classification number: G03F9/7069 G01B11/272 G03F7/70633

    Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

    Metrology recipe selection
    48.
    发明授权

    公开(公告)号:US11106142B2

    公开(公告)日:2021-08-31

    申请号:US16733890

    申请日:2020-01-03

    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

    Method and apparatus for predicting performance of a metrology system

    公开(公告)号:US10884342B2

    公开(公告)日:2021-01-05

    申请号:US15771585

    申请日:2016-10-07

    Abstract: A metrology system can be integrated within a lithographic apparatus to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, the throughput information including a throughput parameter, and predict, using a throughput simulator, a throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.

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