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72 条记录 (耗时 0.039 秒)

    METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER
    41.
    发明申请
    METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 审中-公开
    选择沉积外延层的方法

    公开(公告)号：US20110277934A1

    公开(公告)日：2011-11-17

    申请号：US13191020

    申请日：2011-07-26

    申请人： Zhiyuan Ye ,  Saurabh Chopra ,  Yihwan Kim

    发明人： Zhiyuan Ye ,  Saurabh Chopra ,  Yihwan Kim

    IPC分类号： C23F1/08 ,  C23C16/00

    CPC分类号： H01L21/02532 ,  C23C16/325 ,  C23C16/56 ,  C30B25/04 ,  C30B25/14 ,  C30B25/18 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02538 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/3065 ,  Y10S438/929

    摘要： Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber.

    摘要翻译： 本文提供了用于选择性沉积外延层的设备。 在一些实施例中，用于处理衬底的设备可以包括其中设置有衬底支撑件的处理室; 耦合到处理室的沉积气体源; 耦合到所述处理室的蚀刻气体源，所述蚀刻气体源包括氢和卤素气体源和锗气体源; 能量控制源，以将基底保持在高达600摄氏度的温度; 以及联接到处理室的排气系统，以控制处理室中的压力。

    METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER
    44.
    发明申请
    METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER 有权
    嵌入硅碳外延层的方法

    公开(公告)号：US20090215249A1

    公开(公告)日：2009-08-27

    申请号：US12038288

    申请日：2008-02-27

    申请人： John Boland ,  Zhiyuan Ye ,  Yihwan Kim

    发明人： John Boland ,  Zhiyuan Ye ,  Yihwan Kim

    IPC分类号： H01L21/36

    CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L29/165 ,  H01L29/78 ,  H01L29/7848

    摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.

    摘要翻译： 公开了用于形成包含硅和碳的嵌入式外延层的方法。 具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。 在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层， 硅片。 在具体实施例中，在所得到的含硅外延层上形成栅极。

    Selective epitaxy process with alternating gas supply
    45.
    发明授权
    Selective epitaxy process with alternating gas supply 有权
    选择性外延过程与交替供气

    公开(公告)号：US07572715B2

    公开(公告)日：2009-08-11

    申请号：US11745416

    申请日：2007-05-07

    申请人： Yihwan Kim ,  Arkadii V. Samoilov

    发明人： Yihwan Kim ,  Arkadii V. Samoilov

    IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36

    CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7848 ,  Y10S438/933 ,  Y10S438/969

    摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

    摘要翻译： 在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。 衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。 将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。 沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。 此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多​​晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。 该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

    METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
    47.
    发明申请
    METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe 有权
    选择性沉积重金属外延SiGe的方法

    公开(公告)号：US20060234488A1

    公开(公告)日：2006-10-19

    申请号：US11420906

    申请日：2006-05-30

    申请人： Yihwan Kim ,  Arkadii Samoilov

    发明人： Yihwan Kim ,  Arkadii Samoilov

    IPC分类号： H01L21/44

    CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/78 ,  H01L29/7848

    摘要： The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

    摘要翻译： 本发明通常教导了一种在衬底上沉积硅膜或硅锗膜的方法，包括将衬底放置在处理室内并将衬底表面加热至约600℃至约900℃的温度，同时 保持在约0.1托至约200托的范围内的压力。 沉积气体被提供到处理室，并且包括SiH 4 Si，可选的锗源气体，蚀刻剂，载气和任选的至少一种掺杂剂气体。 在基板上选择性地并外延生长硅膜或硅锗膜。 一个实施方案教导了用惰性气体作为载气沉积含硅膜的方法。 方法可以包括使用选择性硅锗外延膜的电子器件的制造。

    Methods of forming carbon-containing silicon epitaxial layers
    50.
    发明授权
    Methods of forming carbon-containing silicon epitaxial layers 有权
    形成含碳硅外延层的方法

    公开(公告)号：US08029620B2

    公开(公告)日：2011-10-04

    申请号：US11831055

    申请日：2007-07-31

    申请人： Yihwan Kim ,  Zhiyuan Ye ,  Ali Zojaji

    发明人： Yihwan Kim ,  Zhiyuan Ye ,  Ali Zojaji

    IPC分类号： C30B25/12 ,  C30B25/14

    CPC分类号： C30B25/02 ,  C30B29/06

    摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.

    摘要翻译： 在第一方面，提供了一种在衬底上形成外延层堆叠的方法。 该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。 提供了许多其他方面。