摘要:
A single pressure sensing capsule has a reference pressure ported to the rear side of a silicon sensing die. The front side of the silicon sensing die receives a main pressure at another port. The difference between the main and reference pressure results in the sensor providing an differential pressure output. The reference pressure or main pressure may be derived from a pump pressure which is being monitored. The pump pressure output is subjected to a pump ripple or a sinusoidally varying pressure. In order to compensate for pump ripple, a coiled tube or an adjustable dampening chamber comprising a spiral inlet tube and a volume cavity can be used. The tube length is selected to suppress the pump ripple as applied to the sensor die. In this manner, the pump ripple cannot cause resonance which would result in pressure amplification and which pressure amplification would destroy the sensor.
摘要:
A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.
摘要:
Disclosed herein is an electronic switch that comprises a pressure sensitive bridge array adapted to monitor pressure and activate an indicator when the monitored pressure exceeds a predetermined value indicative of a dangerous condition. The electronic switch further comprises a monitoring circuit adapted to test the overall operability of the pressure sensitive bridge array and its accompanying electronics control circuitry.
摘要:
A combined wet-wet differential transducer and a gage pressure transducer located in the same housing, comprising a semiconductor chip which comprises a gage sensor chip on one section and a differential sensor chip on a second section. Each sensor chip has a Wheatstone bridge comprising piezoresistors and is responsive to an applied pressure. The gage chip and the differential chip are placed in a header having a front section and a back section adapted to receive a first and second pressure, respectively. The sensors are in communication with first and second pressure ports such that the absolute sensor provides an output indicative of a pressure applied to a first port and the differential sensor provides an output indicative of the pressure difference between the first and second pressure ports.
摘要:
A method, device and system are provided for measuring multiple pressures under severe conditions. In one embodiment, a method comprises receiving, by a processor, from a first sensor, a first pressure signal; receiving, by the processor, from a second sensor, a second pressure signal; receiving, by the processor, from a first memory, a first correction coefficient for the first sensor; receiving, by the processor, from a second memory, a second correction coefficient for the second sensor; modifying, by the processor, the first pressure signal using the first correction coefficient to generate a first corrected pressure signal; modifying, by the processor, the second pressure signal using the second correction coefficient to generate a second corrected pressure signal; and outputting, by the processor, the first corrected pressure signal and the second corrected pressure signal.
摘要:
A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.
摘要:
A pressure transducer comprising a corrosion resistant metal diaphragm, having an active region, and capable of deflecting when a force is applied to the diaphragm; and a piezoresistive silicon-on-insulator sensor array disposed on a single substrate, the substrate secured to the diaphragm, the sensor array having a first outer sensor near an edge of the diaphragm at a first location and on the active region, a second outer sensor near an edge of the diaphragm at a second location and on the active region, and at least one center sensor substantially overlying a center of the diaphragm, the sensors connected in a bridge array to provide an output voltage proportional to the force applied to the diaphragm. The sensors are dielectrically isolated from the substrate.
摘要:
A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. In one example, a method may comprise receiving, by a sensor device having a contact, a pressure; measuring, by the sensor device, the pressure to generate a pressure signal; outputting, by the sensor device, to the contact, the pressure signal; and receiving, by a header pin, from the contact, the pressure signal, wherein the header pin and the contact are electrically coupled using a conductive, non-lead containing frit and are aligned using a contact cover that is coupled to the sensor device using a non-conductive, non-lead containing frit.
摘要:
This disclosure provides example methods, devices and systems associated with filter structures employed with sensors. In one embodiment, a method comprises receiving, at a first filter having a plurality of pores, a pressure, wherein the pressure includes a static pressure component and a dynamic pressure component; filtering, by the first filter, at least a portion of the dynamic pressure component of the pressure; outputting, from the first filter, a filtered pressure; and wherein the filtered pressure is used to determine the dynamic pressure component.
摘要:
The RTD device of the present invention is comprised of a semiconductor substrate and a substantially thin conductive metal layer disposed upon the semiconductor substrate, wherein the conductive metal has a substantially linear temperature-resistance relationship. The conductive layer is etched into a convoluted RTD pattern, which consequently increases the overall resistance and minimizes the overall mass of the RTD assembly. A contact glass cover and a conductive metal-glass frit are placed over the RTD assembly to hermetically seal the RTD. The resultant structure can be “upside-down” mounted onto a header or a flat shim so that the bottom surface of the semiconductor substrate is exposed to the external environment, thus shielding the RTD from external forces. The resultant structure is a low mass, highly conductive, leadless, and hermetically sealed RTD that accurately measures the temperature of liquids and gases and maintains fast response time in high temperatures and harsh environments.