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公开(公告)号：US20140028995A1
公开(公告)日：2014-01-30
申请号：US13452218
申请日：2012-04-20
IPC分类号： G01N21/01
CPC分类号： G01N21/01 , G01N21/648 , G01N21/658
摘要： Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a flexible substrate, and an array of spaced apart sensing members formed on a surface of the flexible substrate. Each of the spaced apart sensing members includes a plurality of polygon assemblies. The polygon assemblies are arranged in a controlled pattern on the surface of the flexible substrate such that each of the plurality of polygon assemblies is a predetermined distance from each other of the plurality of polygon assemblies, and each of the plurality of polygon assemblies including collapsible signal amplifying structures controllably positioned in a predetermined geometric shape.
摘要翻译： 本文公开了集成传感器的示例。 集成传感器的示例包括柔性基板和形成在柔性基板的表面上的间隔开的感测部件阵列。 每个间隔开的感测构件包括多个多边形组件。 多边形组件以可控的图案布置在柔性基板的表面上，使得多个多边形组件中的每一个距离多个多边形组件中的彼此之间是预定距离，并且多个多边形组件中的每一个包括可折叠信号 放大结构可控地定位在预定的几何形状。
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公开(公告)号：US20140028347A1
公开(公告)日：2014-01-30
申请号：US13561978
申请日：2012-07-30
IPC分类号： H03K19/173
CPC分类号： H03K19/173 , G11C13/0007 , H03K19/17712 , H03K19/17728
摘要： Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor.
摘要翻译： 使用忆阻器实现逻辑可以包括在逻辑单元中具有至少三个忆阻器和偏置电阻器的电路。 至少三个忆阻器中的一个是逻辑单元内的输出忆阻器，至少三个忆阻器的其他忆阻器是输入忆阻器。 至少三个忆阻器和偏置电阻器中的每一个电连接到电压源，其中施加到至少三个忆阻器中的每一个的每个电压和至少三个忆阻器的偏置电阻器和电阻状态确定输出忆阻器的电阻状态 。
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公开(公告)号：US20130334485A1
公开(公告)日：2013-12-19
申请号：US14001835
申请日：2011-02-28
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译： 提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，所述有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。 还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。 每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。 还提供了包括忆阻元件在内的多层结构。
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公开(公告)号：US20130278929A1
公开(公告)日：2013-10-24
申请号：US13451290
申请日：2012-04-19
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01J3/021 , G01N21/658
摘要： Apparatus, methods, and hollow metal waveguides to perform surface-enhanced Raman spectroscopy are disclosed. An example apparatus includes a hollow metal waveguide to direct Raman photons from an intermediate location within a volume of the hollow metal waveguide toward a distal end of the hollow metal waveguide, and a mirror to direct incident light from a light source to the intermediate location within the volume of the hollow metal waveguide and to direct at least some of the Raman photons toward the distal end.
摘要翻译： 公开了用于执行表面增强拉曼光谱的装置，方法和中空金属波导。 示例性装置包括中空金属波导，以将拉曼光子从中空金属波导的体积内的中间位置引向中空金属波导的远端，以及反射镜，用于将来自光源的入射光引导到中间金属波导的中间位置 中空金属波导的体积并且将至少一些拉曼光子引向远端。
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公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译： 忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。
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公开(公告)号：US08546898B2
公开(公告)日：2013-10-01
申请号：US13259196
申请日：2009-09-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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公开(公告)号：US08530880B2
公开(公告)日：2013-09-10
申请号：US13259168
申请日：2009-07-27
IPC分类号： H01L29/06 , H03K19/177 , H03K25/00 , H03K19/173
CPC分类号： H01L27/11807 , H01L27/0207 , H01L27/101 , H01L27/105
摘要： A reconfigurable multilayer circuit (400) includes a complimentary metal-oxide-semiconductor (CMOS) layer (210) having control circuitry, logic gates (515), and at least two crossbar arrays (205, 420) which overlie the CMOS layer (210). The at least two crossbar arrays (205, 420) are configured by the control circuitry and form reconfigurable interconnections between the logic gates (515) within the CMOS layer (210).
摘要翻译： 可重构多层电路（400）包括具有控制电路，逻辑门（515）和覆盖在CMOS层（210）上的至少两个交叉阵列（205,420）的互补金属氧化物半导体（CMOS）层（210） ）。 所述至少两个横杆阵列（205,420）由所述控制电路配置并在所述CMOS层（210）内的所述逻辑门（515）之间形成可重构互连。
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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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公开(公告)号：US20130044525A1
公开(公告)日：2013-02-21
申请号：US13212428
申请日：2011-08-18
IPC分类号： H02M7/04
CPC分类号： H02M7/06
摘要： An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
摘要翻译： 非对称开关整流器包括第一开关装置，以在第一状态下允许电流流动并且阻止处于第二状态的电流和以头对头形式连接到所述第一开关装置的第二开关装置，所述第二开关装置 切换以允许电流在第一状态下流动并且在第二状态下抑制电流。 将所述开关器件转换到所述第一状态的第一电流不同于将所述开关器件转换到所述第二状态的第二电流。 整流器还包括旁路段，以从所述第一开关器件和所述第二开关器件之间的中心电极抽取旁路电流。
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50.发明授权公开(公告)号：US08347726B2
公开(公告)日：2013-01-08
申请号：US11739853
申请日：2007-04-25
摘要： A sensing device includes a nanowire configured to deform upon exposure to a force, and a transducer for converting the deformation into a measurement. The nanowire has two opposed ends; and the transducer is operatively connected to one of the two opposed ends of the nanowire. The other of the two opposed ends of the nanowire is freestanding.
摘要翻译： 感测装置包括构造成在暴露于力时变形的纳米线和用于将变形转换成测量的换能器。 纳米线有两个相反的两端; 并且换能器可操作地连接到纳米线的两个相对端中的一个。 纳米线的两个相对端的另一个是独立的。
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