公开(公告)号：US20210257428A1

公开(公告)日：2021-08-19

申请号：US16959114

申请日：2020-02-26

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei SONG ,  Ce ZHAO ,  Yuankui DING ,  Heekyu KIM ,  Ming WANG ,  Ning LIU ,  Yingbin HU

IPC: H01L27/32 ,  H01L51/56

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.

公开(公告)号：US20210227656A1

公开(公告)日：2021-07-22

申请号：US16756467

申请日：2019-10-21

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qinghe WANG ,  Dongfang WANG ,  Tongshang SU ,  Ning LIU ,  Guangyao LI ,  Yongchao HUANG ,  Yang ZHANG ,  Jiawen SONG ,  Zhiwen LUO ,  Liangchen YAN

IPC: H05B45/18 ,  H01L29/786 ,  H01L31/12 ,  H01L29/49 ,  H01L29/423 ,  H01L27/32

Abstract: A thin-film transistor includes: an active layer having a first side and a second side opposing to the first side; a main gate electrode spaced from the active layer on the first side, and including a conductive material; an auxiliary gate electrode spaced from the active layer on the second side, wherein the auxiliary gate electrode includes a phase change material having a phase change temperature; the auxiliary gate electrode is configured to have a transition between insulating and conductive based on a temperature of the auxiliary gate electrode; and the main gate electrode and the auxiliary gate electrode are electrically coupled to each other when the auxiliary gate electrode is conductive.

公开(公告)号：US20210074946A1

公开(公告)日：2021-03-11

申请号：US17051323

申请日：2020-03-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Inventor： Leilei CHENG ,  Tongshang SU ,  Qinghe WANG ,  Guangyao LI ,  Wei SONG ,  Ning LIU ,  Yang ZHANG ,  Yongchao HUANG

IPC: H01L51/52 ,  H01L51/56

Abstract: The present invention relates to the field of display technologies, and provides an array substrate, a manufacturing method thereof, and a display device. The array substrate includes a first electrode layer. The first electrode layer may include an indium tin oxide layer and a planarization layer. The indium tin oxide layer is disposed on a substrate and includes indium tin oxide particles; the planarization layer is disposed on a side of the indium tin oxide layer away from the substrate, and fills at least part of gaps between the indium tin oxide particles, and the planarization layer can conduct electricity.