公开(公告)号：US20070032054A1

公开(公告)日：2007-02-08

申请号：US11199593

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/26

CPC分类号： H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

摘要翻译： 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US20060088655A1

公开(公告)日：2006-04-27

申请号：US10971772

申请日：2004-10-23

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC分类号： C23C14/00 ,  C23C16/52

CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， 然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US20060073683A1

公开(公告)日：2006-04-06

申请号：US11284975

申请日：2005-11-21

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01L21/04

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

摘要翻译： 将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。 所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

公开(公告)号：US20050191828A1

公开(公告)日：2005-09-01

申请号：US11003000

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/4763

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/76254

摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

摘要翻译： 集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。 每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

公开(公告)号：US20070119546A1

公开(公告)日：2007-05-31

申请号：US11600680

申请日：2006-11-15

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01J7/24 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32412

摘要： A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.

摘要翻译： 用于将物种植入工件的等离子体浸入式离子注入反应器包括具有限定腔室的侧壁和顶板的壳体，以及腔室内的工件支撑基座，用于支撑具有物体所属表面层的工件 离子注入，工件支撑台座面向天花板的内表面，以便在其间限定大致延伸穿过晶片支撑台座的直径的工艺区域。 反应器还包括连接在天花板或侧壁上的RF等离子体源功率发生器和用于将RF源功率电容耦合到腔室中的工件支撑基座。 提供了一种用于将工艺气体提供到腔室中的气体分配装置，并且提供了一种工艺气体供给装置，用于向气体分配装置提供含有该物质的工艺气体。 RF偏置发生器连接到工件支撑基座，并具有用于建立RF偏压的RF偏置频率。

公开(公告)号：US20060237136A1

公开(公告)日：2006-10-26

申请号：US11115956

申请日：2005-04-26

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kenneth Collins ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01L21/306

CPC分类号： F16K1/526 ,  F16K1/22 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/87531

摘要： A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.

摘要翻译： 具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口 所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一 和第二阀间隙。 第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。

公开(公告)号：US20060081558A1

公开(公告)日：2006-04-20

申请号：US11046660

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： C23F1/00 ,  H01L21/302

CPC分类号： H01J37/321 ,  H01J37/32082 ,  Y10S438/906

摘要： A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

摘要翻译： 一种处理工件的方法包括将工件放置在具有气体分配喷头的主室中的工件支撑基座上，将工艺气体引入远程等离子体源室并在远程等离子体源室中产生等离子体，传输等离子体产生的 从远程等离子体源室到气体分配淋浴喷头的物质，以便通过气体分配喷头将等离子体产生的物质分配到主室中，并将等离子体RF功率施加到主室中。

公开(公告)号：US20070042580A1

公开(公告)日：2007-02-22

申请号：US11551196

申请日：2006-10-19

申请人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Rick Roberts ,  Kenneth Collins ,  Ken MacWilliams ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/425

CPC分类号： H01L21/823864 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/823871 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.

摘要翻译： 集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。 每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

公开(公告)号：US20060263540A1

公开(公告)日：2006-11-23

申请号：US11131899

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H05H1/24

CPC分类号： H05H1/46

摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

摘要翻译： 一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积 在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

公开(公告)号：US20050136604A1

公开(公告)日：2005-06-23

申请号：US11002965

申请日：2004-12-01

申请人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01J37/32 ,  H01L21/336

CPC分类号： H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

摘要翻译： 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。