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52 条记录 (耗时 0.032 秒)

    Photosensitive composition
    44.
    发明授权
    Photosensitive composition 失效
    感光组合物

    公开(公告)号：US5063134A

    公开(公告)日：1991-11-05

    申请号：US455783

    申请日：1990-01-02

    申请人： Rumiko Horiguchi ,  Shuzi Hayase ,  Yasunobu Onishi

    发明人： Rumiko Horiguchi ,  Shuzi Hayase ,  Yasunobu Onishi

    IPC分类号： C08G8/06 ,  C08G8/28 ,  C09D161/04 ,  G03F7/075

    CPC分类号： G03F7/0758 ,  C08G8/06 ,  C08G8/28 ,  C09D161/04

    摘要： A photosensitive composition contains a polymer having a unit represented by formula I, and a photosensitive agent: ##STR1## wherein each of R.sub.1 to R.sub.4 represents a hydrogen atom, an alkyl group, an alkoxyl group, or a substituted or non-substituted allyl group, at least one of R.sub.1 to R.sub.4 being an alkyl groups having 1 to 10 carbon atoms and containing silicon, l represents a positive integer, and each of a and b represents an integer from 1 to 3, and c represents an integer from 0 to 2, a+b+c not exceeding 4.

    摘要翻译： 感光性组合物含有具有式I表示的单元的聚合物和光敏剂：其中R 1〜R 4各自表示氢原子，烷基，烷氧基或取代或未取代的光敏剂， 取代的烯丙基，R 1至R 4中的至少一个为具有1至10个碳原子且含有硅的烷基，l表示正整数，a和b各自表示1至3的整数，c表示整数 从0到2，a + b + c不超过4。

    Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device
    45.
    发明授权
    Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效
    图案形成方法，下层膜形成组合物和半导体器件的制造方法

    公开(公告)号：US07300884B2

    公开(公告)日：2007-11-27

    申请号：US11270621

    申请日：2005-11-10

    申请人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

    发明人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337

    摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

    摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。

    Resist pattern forming method and method of manufacturing semiconductor device
    46.
    发明申请
    Resist pattern forming method and method of manufacturing semiconductor device 审中-公开
    抗蚀剂图案形成方法和半导体器件的制造方法

    公开(公告)号：US20060194449A1

    公开(公告)日：2006-08-31

    申请号：US11350127

    申请日：2006-02-09

    申请人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

    发明人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

    IPC分类号： H01L21/31

    CPC分类号： G03F7/38 ,  G03F7/0045 ,  H01L21/0276

    摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.

    摘要翻译： 抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度 在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加 抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影 电影降温后。

    Pattern forming method and method of manufacturing semiconductor device
    47.
    发明申请
    Pattern forming method and method of manufacturing semiconductor device 审中-公开
    图案形成方法和制造半导体器件的方法

    公开(公告)号：US20060127815A1

    公开(公告)日：2006-06-15

    申请号：US11296480

    申请日：2005-12-08

    申请人： Yasuhiko Sato ,  Yasunobu Onishi

    发明人： Yasuhiko Sato ,  Yasunobu Onishi

    IPC分类号： G03F7/00

    CPC分类号： G03F7/094 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/093 ,  G03F7/11 ,  G03F7/115

    摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming a first resist film on a film to be worked formed on a semiconductor substrate, forming a second resist film on the first resist film, forming a resist pattern from the second resist film, forming an overcoat film containing a metal element or a semi-conducting element on the resist pattern, insolubilizing, in a predetermined solvent, a portion of the overcoat film at a predetermined distance from an interface between the overcoat film and the resist pattern, removing, with the solvent, a portion of the overcoat film soluble in the solvent to form an overcoat film pattern, transferring the overcoat film pattern to the first resist film to form a lower-layer resist film pattern, and transferring the lower-layer resist film pattern to the film to be worked to form a pattern on the film.

    摘要翻译： 根据本发明的一个方面，提供了一种图案形成方法，包括在半导体衬底上形成的待加工膜上形成第一抗蚀剂膜，在第一抗蚀剂膜上形成第二抗蚀剂膜，从第一抗蚀剂图案形成抗蚀剂图案 在抗蚀剂图案上形成含有金属元素或半导体元件的外涂膜，在规定的溶剂中不溶解从外涂膜与抗蚀剂之间的界面预定距离的一部分覆盖膜 用溶剂除去一部分可溶于溶剂的外涂膜形成外涂膜图案，将覆盖膜图案转印到第一抗蚀剂膜上以形成下层抗蚀剂膜图案， 层抗蚀剂膜图案到待加工的膜以在膜上形成图案。

    Pattern formation resist and pattern formation method
    50.
    发明授权
    Pattern formation resist and pattern formation method 失效
    图案形成抗蚀剂和图案形成方法

    公开(公告)号：US5279921A

    公开(公告)日：1994-01-18

    申请号：US799320

    申请日：1991-11-27

    申请人： Yasunobu Onishi ,  Yoshihito Kobayashi ,  Hirokazu Niki

    发明人： Yasunobu Onishi ,  Yoshihito Kobayashi ,  Hirokazu Niki

    IPC分类号： C08K5/41 ,  C08K5/42 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03C1/73

    CPC分类号： G03F7/0045 ,  Y10S430/122 ,  Y10S430/124

    摘要： Disclosed is a pattern formation resist which can be exposed with deep UV, has a high dry etching resistance, has a large allowance in a development manipulation using an aqueous alkali solution, and can form a fine pattern having a good sectional shape. The resist comprises an alkali-soluble polymer and a compound represented by the following formula (I) and simultaneously containing, in a single molecule, a substituent which decomposes with an acid and a group which produces an acid with deep UV: ##STR1## wherein the substituent which decomposes with an acid is present in at least one of R.sub.1 to R.sub.4, and when R.sub.1 to R.sub.4 have a group except for the substituent which decomposes with an acid, R.sub.1 represents a nonsubstituted or substituted aliphatic hydrocarbon group, each of R.sub.2 and R.sub.3 independently represents a hydrogen atom or a non-substituted or substituted aliphatic hydrocarbon group, and R.sub.4 represents a nonsubstituted or substituted aliphatic hydrocarbon group.

    摘要翻译： 公开了一种图案形成抗蚀剂，其可以用深紫外线曝光，具有高的耐干蚀刻性，在使用碱性水溶液的显影操作中具有大的余量，并且可以形成具有良好截面形状的精细图案。 抗蚀剂包含碱溶性聚合物和由下式（I）表示的化合物，并且在单分子中同时含有与酸分解的取代基和产生具有深UV的酸的基团：（*化学结构 *）（I）其中与酸分解的取代基存在于R 1至R 4中的至少一个中，并且当R 1至R 4具有除了与酸分解的取代基之外的基团时，R 1表示非取代或取代的脂族烃 基团，R2和R3各自独立地表示氢原子或未取代或取代的脂族烃基，R4表示非取代或取代的脂族烃基。