利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

94 条记录 (耗时 0.079 秒)

    Backside-illuminated imaging sensor including backside passivation
    41.
    发明申请
    Backside-illuminated imaging sensor including backside passivation 审中-公开
    背面照明成像传感器，包括背面钝化

    公开(公告)号：US20100013039A1

    公开(公告)日：2010-01-21

    申请号：US12177035

    申请日：2008-07-21

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

    IPC分类号： H01L27/146 ,  H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/1464

    摘要： The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside.

    摘要翻译： 本公开描述了一种方法的实施例，包括在衬底的前侧形成像素，衬底具有前侧，后侧以及基本上等于前侧和后侧之间的距离的厚度。 通过从衬底的背面去除材料以允许像素的背面照明来减小衬底的厚度，并且用氢等离子体处理衬底的背面以钝化背面。 本公开还描述了包括半导体晶片的装置的实施例，其具有前侧，后侧以及基本上等于前侧和后侧之间的距离的厚度以及形成在前侧的像素，其中选择晶片的厚度 并且被调整为允许通过晶片的背面照射像素，并且其中背面用氢等离子体处理以钝化背面。

    CMOS image sensor with high full-well-capacity
    42.
    发明申请
    CMOS image sensor with high full-well-capacity 有权
    具有高全容量容量的CMOS图像传感器

    公开(公告)号：US20090302358A1

    公开(公告)日：2009-12-10

    申请号：US12133217

    申请日：2008-06-04

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  Y02E10/50

    摘要： An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.

    摘要翻译： 具有高全阱容量的图像传感器包括光敏区域，转移栅极和侧壁间隔物。 光敏区域形成为响应于光积累图像电荷。 所述传输栅极邻近所述光敏区域设置并耦合以选择性地将所述图像电荷从所述感光区域传送到其它像素电路。 第一和第二侧壁间隔件设置在传送门的两侧。 最靠近感光区域的第一侧壁隔离物比第二侧壁间隔物窄。 在一些情况下，可以省略第一侧壁间隔物。

    BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER
    44.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR HAVING A CARRIER SUBSTRATE AND A REDISTRIBUTION LAYER 有权
    具有载体基板和重新分配层的背面照明成像传感器

    公开(公告)号：US20090194798A1

    公开(公告)日：2009-08-06

    申请号：US12027222

    申请日：2008-02-06

    申请人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

    发明人： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A backside illuminated imaging sensor includes a semiconductor substrate having a front surface and a back surface. The semiconductor substrate has at least one imaging array formed on the front surface. The imaging sensor also includes a carrier substrate to provide structural support to the semiconductor substrate, where the carrier substrate has a first surface coupled to the front surface of the semiconductor substrate. A redistribution layer is formed between the front surface of the semiconductor substrate and the second surface of the carrier substrate to route electrical signals between the imaging array and a second surface of the carrier substrate.

    摘要翻译： 背面照明成像传感器包括具有前表面和后表面的半导体衬底。 半导体衬底具有形成在前表面上的至少一个成像阵列。 该成像传感器还包括一个载体衬底，用于向半导体衬底提供结构支撑，其中载体衬底具有耦合到半导体衬底的前表面的第一表面。 在半导体衬底的前表面和载体衬底的第二表面之间形成再分布层，以在成像阵列和载体衬底的第二表面之间布置电信号。

    Lateral light shield in backside illuminated imaging sensors
    46.
    发明授权
    Lateral light shield in backside illuminated imaging sensors 有权
    背面照明成像传感器的侧面防护罩

    公开(公告)号：US08772898B2

    公开(公告)日：2014-07-08

    申请号：US13370085

    申请日：2012-02-09

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC分类号： H01L31/0216

    CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

    摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

    Backside illuminated imaging sensor with vertical pixel sensor
    47.
    发明授权
    Backside illuminated imaging sensor with vertical pixel sensor 有权
    背面照明成像传感器与垂直像素传感器

    公开(公告)号：US08513762B2

    公开(公告)日：2013-08-20

    申请号：US13250237

    申请日：2011-09-30

    申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/00 ,  H01L31/0232

    CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

    摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

    High full-well capacity pixel with graded photodetector implant
    48.
    发明授权
    High full-well capacity pixel with graded photodetector implant 有权
    具有渐变光电探测器植入物的高全阱容量像素

    公开(公告)号：US08502290B2

    公开(公告)日：2013-08-06

    申请号：US13615196

    申请日：2012-09-13

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14689 ,  H01L21/26586 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    摘要： Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.

    摘要翻译： 用于通过掺杂剂注入在CMOS像素中形成光电检测器区域的方法的实施例，该方法包括掩蔽用于形成光电检测器区域的基板的表面的光电检测器区域，将基板定位在多个扭曲角度 在多个扭转角度中，以选定的倾斜角将光电探测器区域上的掺杂剂引导。 CMOS像素的实施例包括形成在衬底中的光电检测器区域，所述光电检测器区域包括重叠的第一和第二掺杂剂注入，其中所述重叠区域具有与所述第一和第二植入物的非重叠部分不同的掺杂剂浓度， 形成在基板上，以及形成在光电检测器和传输门之间的基板上的传输门。 公开和要求保护其他实施例。

    Image sensor with contact dummy pixels
    49.
    发明授权
    Image sensor with contact dummy pixels 有权
    具有接触虚拟像素的图像传感器

    公开(公告)号：US08492865B2

    公开(公告)日：2013-07-23

    申请号：US12848628

    申请日：2010-08-02

    申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L27/146 ,  H01L31/02

    CPC分类号： H01L27/14656 ,  H01L27/1463 ,  H01L27/1464

    摘要： An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer.

    摘要翻译： 图像传感器阵列包括基底层，金属层，外延层，多个成像像素和接触虚拟像素。 金属层设置在基底层的上方。 外延层设置在基板层和金属层之间。 成像像素设置在外延层内，并且每个包括用于收集图像信号的光敏元件。 接触虚拟像素配置在外延层内并且包括穿过外延层的导电路径。 导电路径耦合到外延层上方的金属层。