公开(公告)号：US6162715A

公开(公告)日：2000-12-19

申请号：US114839

申请日：1998-07-14

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Steve G. Ghanayem ,  Thomas Wendling ,  Ping Jian

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L21/3205

CPC分类号： H01L29/66583 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/76843 ,  H01L29/4941

摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

摘要翻译： 通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。 通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。 在沉积之前，用氢等离子体预处理晶片以提高粘附性。 钨沉积工艺可以使用六氟化钨和氢气进行CVD。 包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。 在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

公开(公告)号：US5883778A

公开(公告)日：1999-03-16

申请号：US503790

申请日：1995-07-18

申请人： Semyon Sherstinsky ,  John F. Cameron ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam ,  Robert E. Ryan

发明人： Semyon Sherstinsky ,  John F. Cameron ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam ,  Robert E. Ryan

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck 20 of the present invention is capable of maintaining substantially uniform temperatures across a substrate 30. The chuck 20 comprises an electrostatic member 35 that includes (i) an insulator 45 covering an electrode 40, (ii) a substantially planar and conformal contact surface 50 capable of conforming to a substrate 30, and (iii) conduits 105 terminating at the contact surface 50 for providing heat transfer fluid to the contact surface 50. Application of a voltage to the electrode 40 of the electrostatic member 35 electrostatically holds the substrate 30 on the conformal contact surface 50 to define an outer periphery 110 having (1) leaking portions 115 where heat transfer fluid leaks out, and (2) sealed portions 130 where heat transfer fluid substantially does not leak out. A fluid flow regulator 135 is provided for flowing heat transfer fluid at different flow rates through the conduits 105 in the electrostatic member 35 to provide (i) first flow rates of heat transfer fluid through the conduits 105 adjacent to the sealed portions 130 of the outer periphery 110 of the electrostatic member 35, and (ii) second flow rates of heat transfer fluid through the conduits 105 adjacent to the leaking portions 115, the second flow rates being higher than the first flow rates, to maintain substantially uniform temperatures across the substrate 30 held on the chuck 20.

摘要翻译： 本发明的静电卡盘20能够在基板30上保持基本均匀的温度。卡盘20包括静电部件35，静电部件35包括（i）覆盖电极40的绝缘体45，（ii）基本上平面和保形接触 能够与衬底30相符的表面50，以及（iii）终止于接触表面50处的导管105，用于将热传递流体提供给接触表面50.施加电压到静电构件35的电极40，静电地保持衬底 30，以形成具有（1）泄漏部分115（其中传热流体泄漏）的外周110，以及（2）传热流体基本上不会泄漏的密封部分130。 提供流体流量调节器135，用于使不同流速的传热流体流过静电构件35中的管道105，以提供（i）传热流体通过与外部的密封部分130相邻的导管105的第一流量 静电构件35的周边110，以及（ii）通过与泄漏部分115相邻的导管105的传热流体的第二流量，第二流速高于第一流速，以保持基本上均匀的温度 30夹在卡盘20上。

公开(公告)号：US20070197027A1

公开(公告)日：2007-08-23

申请号：US11739545

申请日：2007-04-24

申请人： Jeong Byun ,  Alfred Mak

发明人： Jeong Byun ,  Alfred Mak

IPC分类号： H01L21/44

CPC分类号： C23C16/45529 ,  C23C16/38 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846

摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a metal precursor to form a first boride-containing layer during a first sequential chemisorption process and exposing the substrate to the boron-containing compound, the metal precursor, and a second precursor to form a second boride-containing layer on the first boride-containing layer during a second sequential chemisorption process. In one example, the metal precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.

摘要翻译： 在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和金属前体以形成第一含硼化物层， 将基底暴露于含硼化合物，金属前体和第二前体，以在第二顺序化学吸附过程中在第一含硼化物层上形成第二含硼化物层。 在一个实例中，金属前体含有六氟化钨，含硼化合物含有乙硼烷。 在另一个实施方案中，在第二含硼化物层上沉积接触层。 接触层可以含有钨并通过化学气相沉积工艺进行沉积。 或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。 在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

公开(公告)号：US07208413B2

公开(公告)日：2007-04-24

申请号：US10993925

申请日：2004-11-19

申请人： Jeong Soo Byun ,  Alfred Mak

发明人： Jeong Soo Byun ,  Alfred Mak

IPC分类号： H01L21/44

CPC分类号： C23C16/45529 ,  C23C16/38 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846

摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

摘要翻译： 公开了形成用于集成电路制造的硼化物层的方法。 在一个实施方案中，硼化物层通过将含硼化合物和一种难熔金属化合物的单层化学吸附到基底上而形成。 在替代实施例中，硼化物层具有复合结构。 复合硼化物层结构包括两种或多种难熔金属。 复合硼化物层通过在基材上依次化学吸附硼化合物的单层和两种或更多种难熔金属化合物而形成。

公开(公告)号：US20070023393A1

公开(公告)日：2007-02-01

申请号：US11531467

申请日：2006-09-13

申请人： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

发明人： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： G03F1/80 ,  H01J37/321 ,  H01J37/32935

摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

摘要翻译： 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

公开(公告)号：US20060292874A1

公开(公告)日：2006-12-28

申请号：US11468156

申请日：2006-08-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体 以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。 该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

公开(公告)号：US20050133158A1

公开(公告)日：2005-06-23

申请号：US10741588

申请日：2003-12-19

申请人： Khiem Nguyen ,  Alfred Mak

发明人： Khiem Nguyen ,  Alfred Mak

IPC分类号： H01L21/677 ,  H01L21/687 ,  C23F1/00

CPC分类号： H01L21/67742 ,  H01L21/68707

摘要： Method and apparatus for supporting a substrate in a semiconductor substrate processing system are provided. A substrate is supported on two substrate support each having an inclined surface for receiving a portion of the substrate while minimizing contact with the substrate and guides for centering the substrate on the inclined surface. In one aspect, the two substrate supports are position facing each other on a ring disposed in a loadlock chamber with the substrate supported therebetween. Multiple sets of the substrate supports may be used to hold multiple substrates at a time in the loadlock chamber.

摘要翻译： 提供了一种用于在半导体衬底处理系统中支撑衬底的方法和装置。 基板被支撑在两个基板支撑件上，每个基板支撑件具有用于接收基板的一部分的倾斜表面，同时最小化与基板的接触和用于使基板定位在倾斜表面上的导向件。 在一个方面，两个基板支撑件位于设置在负载锁定室中的环上彼此面对的位置，其中基板被支撑在它们之间。 多组衬底支撑件可以用于在负载锁定室中一次保持多个衬底。

公开(公告)号：US06872429B1

公开(公告)日：2005-03-29

申请号：US09067429

申请日：1998-04-27

申请人： Ling Chen ,  Seshadri Ganguli ,  Alfred Mak

发明人： Ling Chen ,  Seshadri Ganguli ,  Alfred Mak

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L21/28556 ,  H01L29/4941 ,  H01L29/66583

摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.

摘要翻译： 一层氮化钨沉积在晶片的上表面上，具有改善的粘附力。 通过在进行氮化钨沉积之前首先用氢等离子体预处理晶片来进行沉积。

公开(公告)号：US06831004B2

公开(公告)日：2004-12-14

申请号：US10387990

申请日：2003-03-13

申请人： Jeong Soo Byun ,  Alfred Mak

发明人： Jeong Soo Byun ,  Alfred Mak

IPC分类号： H01L214763

CPC分类号： C23C16/45529 ,  C23C16/38 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846

摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

公开(公告)号：US6099904A

公开(公告)日：2000-08-08

申请号：US982844

申请日：1997-12-02

申请人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

发明人： Alfred Mak ,  Kevin Lai ,  Cissy Leung ,  Dennis Sauvage

IPC分类号： C23C16/02 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  C23C16/08

CPC分类号： C23C16/0281 ,  C23C16/14 ,  H01L21/28556

摘要： A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a deposition zone of a substrate processing chamber while the deposition zone is maintained at or below a first pressure level. During this first deposition stage, other process variables are maintained at conditions suitable to deposit a first layer of the tungsten film over the substrate. Next, during a second deposition stage after the first stage, the flow of the group III or V hydride into the deposition zone is stopped, and afterwards, the pressure in the deposition zone is increased to a second pressure above the first pressure level and other process parameters are maintained at conditions suitable for depositing a second layer of the tungsten film on the substrate. In a preferred embodiment, the flow of the tungsten-containing source is stopped along with the flow of the group III or V hydride and after a period of between 5 and 30 seconds, the flow of the tungsten-containing source is restarted when the pressure is in the deposition zone is increased to the second pressure level.

摘要翻译： 用于在基板上沉积钨膜的多步化学气相沉积工艺。 沉积工艺的第一步包括成核步骤，其中包含含钨源，III或V族氢化物和还原剂的工艺气体在保持沉积区的同时流入衬底处理室的沉积区 处于或低于第一压力水平。 在该第一沉积阶段期间，其它工艺变量被保持在适于将第一层钨膜沉积在衬底上的条件下。 接下来，在第一阶段之后的第二沉积阶段期间，停止将III或V族氢化物流入沉积区的流动，之后，沉积区中的压力增加到高于第一压力水平的第二压力和其它 工艺参数保持在适合于在衬底上沉积第二层钨膜的条件下。 在一个优选的实施方案中，随着III或V族氢化物的流动停止含钨源的流动，并且在5至30秒之间的时间段内，当含有钨的源的流量在压力 在沉积区中增加到第二压力水平。