公开(公告)号：US06297523B1

公开(公告)日：2001-10-02

申请号：US08108499

申请日：1993-08-18

申请人： Yoshihisa Fujisaki ,  Yukio Takano ,  Tsutomu Ishiba

发明人： Yoshihisa Fujisaki ,  Yukio Takano ,  Tsutomu Ishiba

IPC分类号： H01L2976

CPC分类号： H01L29/32 ,  C30B15/00 ,  C30B29/42 ,  H01L29/207

摘要： By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4×10−5 and the density of Si atoms contained in the GaAs single crystal is set to at most 1×1016 cm−3, whereby the characteristics of semiconductor elements whose parent material is the GaAs single crystal can be made uniform.

摘要翻译： 通过利用晶片中的晶格畸变分布与场效应晶体管的阈值电压分布之间的强相关性，晶片中晶格畸变的分布减小，从而减轻半导体的特性分布 晶片中的元素。 将GaAs单晶在正常温度下的晶格畸变的最大值和最小值的差设定为4×10-5以下，将GaAs单晶中所含有的Si原子的密度设定为1×1016cm -1以下， 3，由此能够使母材为GaAs单晶的半导体元件的特性均匀。

公开(公告)号：US5770873A

公开(公告)日：1998-06-23

申请号：US457584

申请日：1995-06-01

申请人： Yoshihisa Fujisaki ,  Yukio Takano ,  Tsutomu Ishiba

发明人： Yoshihisa Fujisaki ,  Yukio Takano ,  Tsutomu Ishiba

IPC分类号： C30B15/00 ,  H01L29/207 ,  H01L29/32 ,  H01L29/20 ,  H01L29/812

CPC分类号： H01L29/32 ,  C30B15/00 ,  C30B29/42 ,  H01L29/207 ,  H01L2924/0002

摘要： By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and the minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent material (substrate) is the GaAs single crystal can be made uniform.

摘要翻译： 通过利用晶片中的晶格畸变分布与场效应晶体管的阈值电压分布之间的强相关性，晶片中晶格畸变的分布减小，从而减轻半导体的特性分布 晶片中的元素。 将GaAs单晶在正常温度下的晶格畸变的最大值与最小值的差设定为4×10 -5以下，将GaAs单晶中含有的Si原子的密度设定为1×1016以下 cm-3，由此可以使母材（衬底）为GaAs单晶的半导体元件的特性均匀。

公开(公告)号：US4716127A

公开(公告)日：1987-12-29

申请号：US852317

申请日：1986-04-15

申请人： Shoji Shukuri ,  Masao Tamura ,  Yasuo Wada ,  Yoshihisa Fujisaki

发明人： Shoji Shukuri ,  Masao Tamura ,  Yasuo Wada ,  Yoshihisa Fujisaki

IPC分类号： H01J37/317 ,  H01L21/265 ,  H01L21/8252 ,  G01N23/00

CPC分类号： H01L21/265 ,  H01L21/26546 ,  H01L21/8252

摘要： A desired part of a workpiece is irradiated with a focused ion beam which contains at least two species of impurity ions to-be-implanted exhibiting different spacial distributions of ion current densities.Thus, regions respectively implanted with different species of impurity ions can be formed in a predetermined positional relationship at high precision.

摘要翻译： 用聚焦离子束照射工件的所需部分，该聚焦离子束含有离子电流密度不同的空间分布的待植入的至少两种杂质离子种类。 因此，可以高精度地以预定的位置关系形成分别注入不同种类的杂质离子的区域。