-
41.发明授权Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity 失效用于加强各种红外波段的基板加热装置和方法，以达到均匀强度
公开(公告)号：US5179677A
公开(公告)日：1993-01-12
申请号：US651668
申请日：1991-02-06
IPC分类号： H01L21/205 , C23C16/48 , H01L21/00 , H01L21/22 , H01L21/31
CPC分类号： H01L21/67115 , C23C16/481
摘要： A reflector array employs a number of linear, tubular heater lamps arranged in a circle concentric with the substrate to be heated. Some of the lamps have focusing reflectors and the remainder have dispersive reflectors. A peripheral cylindrical reflector surrounds the lamps and their associated reflectors. The combined reflectors permit balancing the thermal radiation intensity across the surface of the substrate.
-
公开(公告)号：US5104276A
公开(公告)日：1992-04-14
申请号：US745818
申请日：1991-08-16
IPC分类号： H01L21/673
CPC分类号： H01L21/68764 , H01L21/68771
摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.
摘要翻译： 携带用于处理的半导体晶片的感受体在其上端从柔性附件悬挂下来并进入用于处理的反应室。 在处理完成时，基座垂直取出以允许机器人卸载经处理的晶片并加载未处理的晶片。 为了在装载操作期间固定基座的位置，支撑托架被移动到位置以接合基座的下端。 有毒和腐蚀性的氯化物蒸汽通过连接到支撑架的真空管线同时从反应室中排出。
-
公开(公告)号：US4928626A
公开(公告)日：1990-05-29
申请号：US353929
申请日：1989-05-19
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45591
摘要： An epitaxial reactor system provides for enhanced gas flow control and, thus, deposition uniformity. Gross reactant gas flow is set by a main flow controller which delivers unequal amounts to a reaction chamber via two nozzle assemblies. A supplemental flow controlled by an auxiliary flow controller is used to balance the flow rates through the nozzle assemblies so as to reduce spiralling of the gas flow within the chamber. Vertical ridges on a shroud within the reaction chamber help guide incoming gases vertically, further minimizing spiralling. The direction of gas flow from each nozzle assembly is controlled by two actuators, one controlling orientation along a coarse diagonal to obtain an overall vertical uniformity of deposition; the other actuator controls orientation along a fine diagonal to balance inter- and intra-wafer deposition uniformity. This arrangement optimizes the convenience in attaining vertical uniformity. Within each nozzle assembly, a nozzle includes an apertured ball which pivots between two TEFLON rings which are urged against the ball by a lock nut. The compression and frictional forces are adjusted so that a nozzle orientation can be maintained while allowing orientation to be changed by applying force through the actuators. This avoids having to disassemble components to reorient the nozzles.
-
公开(公告)号：US4478322A
公开(公告)日：1984-10-23
申请号：US257292
申请日：1981-04-24
CPC分类号： F16H47/065 , F16H61/143 , Y10T477/735 , Y10T477/743
摘要： An electronic control system for a lockup clutch includes a control system for receiving a vehicle speed signal and, as a function of adjustable engagement and release threshold signals, controlling a solenoid valve to engage and release a lockup clutch. The point of lockup is set by a potentiometer to represent a first vehicle speed, and the point of release is set by a variable resistor at a second speed, lower than the first. The variable resistor is switched into the circuit only after the first threshold level is passed and the clutch is locked up. A signal from the brake pedal overrides the threshold established in the control system to provide clutch disengagement as soon as the brake pedal is depressed. Various circuit components protect the control system from inadvertent damage by the driver and/or vehicle maintenance personnel.
摘要翻译： 用于锁止离合器的电子控制系统包括用于接收车速信号的控制系统，并且作为可调接合和释放阈值信号的功能，控制电磁阀接合和释放锁止离合器。 锁定点由电位器设置以表示第一车速，并且释放点由可变电阻器以低于第一速度的第二速度设置。 仅在通过第一阈值电平并且离合器被锁定之后，可变电阻器才被切换到电路中。 一旦制动踏板被按下，来自制动踏板的信号就会超过控制系统中建立的阈值，以提供离合器分离。 各种电路部件保护控制系统免受驾驶员和/或车辆维护人员的意外损坏。
-
公开(公告)号：US09032990B2
公开(公告)日：2015-05-19
申请号：US13441371
申请日：2012-04-06
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译： 本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室， 其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。
-
公开(公告)号：US08980005B2
公开(公告)日：2015-03-17
申请号：US13193570
申请日：2011-07-28
IPC分类号： C23C16/458 , C23C16/44 , C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译： 本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。 在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。 所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体 第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。
-
公开(公告)号：US08658540B2
公开(公告)日：2014-02-25
申请号：US13156082
申请日：2011-06-08
IPC分类号： H01L21/306 , B08B6/00 , B44C1/22
CPC分类号： H01L21/67115 , H01L21/68742
摘要： Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.
摘要翻译： 本文提供了从处理室内表面除去残留物的方法。 在一些实施例中，调节处理室的内表面的方法可以包括将处理室保持在小于约800摄氏度的第一压力和第一温度; 在所述第一压力和所述第一温度下向所述处理室提供工艺气体，其中所述工艺气体包括氯和氮以除去设置在所述处理室的内表面上的残留物; 以及将处理室中的压力从第一压力增加到第二压力，同时继续向处理室提供处理气体。
-
公开(公告)号：US06876442B2
公开(公告)日：2005-04-05
申请号：US10078071
申请日：2002-02-13
申请人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
发明人： Jean R. Vatus , David K. Carlson , Arkadii V. Samoilov , Lance A. Scudder , Paul B. Comita , Annie A. Karpati
IPC分类号： C23C16/52 , H01L21/205 , H01L21/66 , G01J5/48 , G01R31/26
CPC分类号： H01L22/20
摘要： A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.
摘要翻译： 提供了避免高温计的温度读数误差的方法。 在标准处理条件下，使用上高温计来检测在测试基板上形成的测试层的红外辐射。 来自测试层的红外辐射具有指示层的生长速率的长度的周期。 这个时期通常与增长率成反比。 生长速度与温度直接相关。
-
公开(公告)号：US06476362B1
公开(公告)日：2002-11-05
申请号：US09660565
申请日：2000-09-12
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.
摘要翻译： 用于热处理室的灯阵列。 灯阵列包括以大致圆形阵列布置的多个灯。 多个灯可以布置在一个或多个同心环中以形成大致圆形的阵列。 可以在圆形阵列或最外同心环的圆周附近设置附加的灯阵列，以提供大致矩形的加热图案。 至少一排灯可以与灯阵列的圆形部分相切地提供，以在矩形处理室的流动方向上提供工艺气体的预加热或后加热。
-
公开(公告)号：US6153260A
公开(公告)日：2000-11-28
申请号：US835955
申请日：1997-04-11
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , C30B31/16 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4408 , C23C16/4412 , C23C16/481 , C30B25/14 , C30B31/16
摘要： The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.
摘要翻译： 本发明是具有用于加热废气的排气下衬板的单晶片反应器。 本发明的装置包括反应室。 将腔室分成上部和下部的晶片支撑构件定位在腔室内。 用于从腔室排出气体的气体出口具有从腔室的下部排出的排气和从腔室的上部排出废气的排气通道。 加热的惰性吹扫气体以一定的速度从下室部分通过排气口供给，以防止沉积气体在排气通道中冷凝。
-
-
-
-
-
-
-
-
-
搜索结果
73 条记录 (耗时 0.034 秒)