公开(公告)号：US20060263726A1

公开(公告)日：2006-11-23

申请号：US11431823

申请日：2006-05-11

申请人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

发明人： Shinichi Ito ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Yasunobu Onishi

IPC分类号： G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/11 ,  Y10S430/162

摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.

摘要翻译： 图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光 通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质， 通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

公开(公告)号：US20060240341A1

公开(公告)日：2006-10-26

申请号：US11472452

申请日：2006-06-22

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

公开(公告)号：US20060177777A1

公开(公告)日：2006-08-10

申请号：US11350080

申请日：2006-02-09

申请人： Daisuke Kawamura ,  Shinichi Ito

发明人： Daisuke Kawamura ,  Shinichi Ito

IPC分类号： G03F7/20

CPC分类号： G03F7/11 ,  G03F7/70341 ,  G03F7/7065 ,  G03F7/70958 ,  Y10S430/162

摘要： A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.

摘要翻译： 图案形成方法包括在基板上形成抗蚀剂膜，在抗蚀剂膜上形成覆盖膜的涂布溶液涂布抗蚀膜，在抗蚀剂膜上形成覆盖膜，通过浸渍将图案转印到抗蚀剂膜上 使用液浸液体在抗蚀剂膜上形成潜像的光刻方法，在形成潜像后去除覆盖膜，进行第一次检查以检查覆盖膜在形成潜像之间是否存在缺陷 并且在所述第一检查中发现所述缺陷时，移除所述覆盖膜，执行预定处理，以及在除去所述覆盖膜之后，在所述基板上显影所述抗蚀剂膜以形成抗蚀剂图案。

公开(公告)号：US07067033B2

公开(公告)日：2006-06-27

申请号：US10775251

申请日：2004-02-11

申请人： Shinichi Ito ,  Riichiro Takahashi ,  Tatsuhiko Ema ,  Katsuya Okamura

发明人： Shinichi Ito ,  Riichiro Takahashi ,  Tatsuhiko Ema ,  Katsuya Okamura

IPC分类号： C23F1/00

CPC分类号： H01L21/67034 ,  B05C11/06 ,  B05C11/08 ,  B05D1/005 ,  B05D3/0406 ,  H01L21/6708 ,  Y10S134/902 ,  Y10S438/906

摘要： In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

摘要翻译： 在本公开中，在化学液膜上方形成空气流，并且通过使空气流与化学液体的表面接触而产生化学液体的移动。 此外，通过旋转板在处理对象基板和板之间的空间中产生负压。 因此，提高了液体的处理均匀性，能够有效地进行液体除去工序。 结果，可以提高化学液体处理的产率。

公开(公告)号：US07018932B2

公开(公告)日：2006-03-28

申请号：US10377597

申请日：2003-03-04

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

IPC分类号： H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675 ,  H01J2237/30438

摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

公开(公告)号：US07009148B2

公开(公告)日：2006-03-07

申请号：US10682419

申请日：2003-10-10

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： F27B5/14

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为 以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流 。

公开(公告)号：US20050250056A1

公开(公告)日：2005-11-10

申请号：US11114043

申请日：2005-04-26

申请人： Kenji Kawano ,  Shinichi Ito

发明人： Kenji Kawano ,  Shinichi Ito

IPC分类号： G03F7/38 ,  H01L21/027 ,  H01L21/312

CPC分类号： G03F7/38 ,  H01L21/312

摘要： According to an aspect of the present invention, there is provided a substrate treatment method comprising forming a chemically amplified resist film on a substrate to be treated, and supplying heat to the chemically amplified resist film to perform a heat treatment, wherein the heat treatment includes creating a first temperature state satisfying TT TB in which TT is a temperature at a surface portion of the chemically amplified resist film, and TB is a temperature at an interface portion of the chemically amplified resist film with the substrate to be treated.

摘要翻译： 根据本发明的一个方面，提供了一种基板处理方法，包括在待处理的基板上形成化学放大的抗蚀剂膜，并向化学放大的抗蚀剂膜供热以进行热处理，其中热处理包括 产生一个满足T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T T B SUB>其中T T T是化学放大抗蚀剂膜的表面部分处的温度，T B B是化学放大抗蚀剂膜的界面部分处的温度 与待处理的基底。

公开(公告)号：US06960540B2

公开(公告)日：2005-11-01

申请号：US09842403

申请日：2001-04-26

申请人： Shinichi Ito ,  Katsuya Okumura

发明人： Shinichi Ito ,  Katsuya Okumura

IPC分类号： B05D1/00 ,  G03F7/16 ,  G11B5/842 ,  G11B7/26 ,  H01L21/027 ,  H01L21/312 ,  H01L21/316 ,  H01L21/30

CPC分类号： B05D1/005 ,  G03F7/16 ,  G03F7/162 ,  G11B7/26

摘要： Relative movement occurs between the in-process substrate and the dropping section. While the substrate is rotated, the dropping section is relatively moved from an approximate center of the substrate toward an outer periphery thereof. While the dropping section relatively moves from the approximate center of the in-process substrate toward the outer periphery, the rotational frequency w for the substrate is decreased so that the solution film should not move due to the centrifugal force applied to a dropped solution film. Concurrently, feed rate v for the liquid from the dropping section is increased to form a solution film on the in-process substrate.

摘要翻译： 相对运动发生在处理衬底和下落部分之间。 当基板旋转时，下降部分从基板的大致中心向其外周相对移动。 当落下部分相对地从处理衬底的大致中心向外周移动时，基板的旋转频率w降低，使得溶液膜由于施加到滴下的溶液膜上的离心力而不应该移动。 同时，来自滴下部分的液体的进料速率v增加，以在工艺衬底上形成溶液膜。

公开(公告)号：US20050069815A1

公开(公告)日：2005-03-31

申请号：US10916414

申请日：2004-08-12

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Masami Watase

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Masami Watase

IPC分类号： B23K26/18 ,  B23K26/00 ,  B23K26/02 ,  B23K101/40 ,  G03F7/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/544

CPC分类号： H01L23/544 ,  H01L21/0275 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/32139 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.

摘要翻译： 一种处理方法包括在选择性地在处理区域上在基板上照射处理光的处理区域上的第一膜上形成水溶性保护膜，以选择性地去除处理区域中的第一膜和处理区域上的保护膜， 并在选择性照射后用水除去保护膜。

公开(公告)号：US20050022732A1

公开(公告)日：2005-02-03

申请号：US10927155

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  H01L21/00 ,  H01L21/20 ,  H01L21/288 ,  H01L21/316 ,  B05C5/00 ,  B05B7/00 ,  B05B13/02 ,  B05C15/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）。