公开(公告)号：US20080026543A1

公开(公告)日：2008-01-31

申请号：US11881285

申请日：2007-07-25

申请人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

摘要翻译： 提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤 第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

公开(公告)号：US20070141733A1

公开(公告)日：2007-06-21

申请号：US11704206

申请日：2007-02-09

申请人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC分类号： H01L21/66 ,  H01L21/84

CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

公开(公告)号：US20070105288A1

公开(公告)日：2007-05-10

申请号：US11588331

申请日：2006-10-27

申请人： Hidekazu Miyairi ,  Chiho Kokubo ,  Koki Inoue

发明人： Hidekazu Miyairi ,  Chiho Kokubo ,  Koki Inoue

IPC分类号： H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277

摘要： A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.

摘要翻译： 提供了具有改进的操作特性和可靠性的半导体器件的制造方法。 在衬底上形成非晶半导体膜，掺杂有促进结晶的金属元素，并通过第一热处理结晶以形成晶体半导体膜; 去除在结晶半导体膜上形成的第一氧化膜，形成第二氧化膜; 用第一激光照射其上形成有第二氧化膜的结晶半导体膜; 在第二氧化物膜上形成含有稀有气体元素的半导体膜; 包含在结晶半导体膜中的金属元素通过第二热处理被吸收到含有稀有气体元素的半导体膜上; 去除含有稀有气体元素和第二氧化物膜的半导体膜; 在含氧气氛中用第二激光照射结晶半导体膜。

公开(公告)号：US07179699B2

公开(公告)日：2007-02-20

申请号：US10920316

申请日：2004-08-18

申请人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  C30B1/00 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/76825 ,  H01L21/76828 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78684

摘要： The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.

摘要翻译： 本发明的目的是提供一种使用能够防止在TFT的沟道形成区域上形成晶界并防止TFT的迁移率极度恶化的激光晶化方法的半导体器件的制造方法， 电流来自由晶界引起的增加或截止电流，以及通过制造方法制造的半导体器件。 形成带状（带状）或矩形凹凸部。 然后，在绝缘膜上形成的半导体膜被照射在绝缘膜上的凹凸部的纵向方向上对角线的激光束。

公开(公告)号：US07141823B2

公开(公告)日：2006-11-28

申请号：US10254670

申请日：2002-09-26

申请人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

发明人： Takashi Hamada ,  Hidekazu Miyairi ,  Takuya Matsuo ,  Naoki Makita ,  Katsumi Nomura

IPC分类号： H01L31/072

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863

摘要： In a TFT with a GOLD structure, there is provided a structure which is able to improve an operating characteristic and reliability and reduce an off current value in order to reduce power consumption of a semiconductor device. The surface of LDD region (4) overlapped with a portion (7a) of a gate electrode through a gate insulating film (6) interposed therebetween is extremely flattened. Thus, it is possible to obtain a TFT structure which is capable of reducing a parasitic capacitance in the LDD region of the TFT with the GOLD structure, reducing an off current value, improving reliability, and enabling high speed operation.

摘要翻译： 在具有GOLD结构的TFT中，提供了能够提高工作特性和可靠性并降低截止电流值以降低半导体器件的功耗的结构。 通过栅绝缘膜（6）与栅电极的部分（7a）重叠的LDD区（4）的表面极其平坦化。 因此，可以获得能够降低具有GOLD结构的TFT的LDD区域中的寄生电容的TFT结构，从而降低截止电流值，提高可靠性并实现高速运行。

公开(公告)号：US07138306B2

公开(公告)日：2006-11-21

申请号：US10252828

申请日：2002-09-24

申请人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US07015083B2

公开(公告)日：2006-03-21

申请号：US10944933

申请日：2004-09-21

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US20050205869A1

公开(公告)日：2005-09-22

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

公开(公告)号：US06933527B2

公开(公告)日：2005-08-23

申请号：US10330025

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/104 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

公开(公告)号：US06884668B2

公开(公告)日：2005-04-26

申请号：US10370055

申请日：2003-02-21

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00 ,  H01L29/04

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。