公开(公告)号：US08031284B2

公开(公告)日：2011-10-04

申请号：US12683473

申请日：2010-01-07

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Satoshi Teramoto

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  G02B27/017 ,  G02B2027/0138 ,  G02F1/133553 ,  G02F1/13454 ,  G02F2203/02 ,  H01L27/124 ,  H01L29/41733

摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

摘要翻译： 公开了一种有源矩阵反射型液晶显示面板，其中有源矩阵电路与外围驱动电路集成。 外围驱动电路中的金属线与像素电极同时形成。 因此，处理顺序和结构都不复杂。

公开(公告)号：US07675583B2

公开(公告)日：2010-03-09

申请号：US11282483

申请日：2005-11-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Satoshi Teramoto

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  G02B27/017 ,  G02B2027/0138 ,  G02F1/133553 ,  G02F1/13454 ,  G02F2203/02 ,  H01L27/124 ,  H01L29/41733

摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

摘要翻译： 公开了一种有源矩阵反射型液晶显示面板，其中有源矩阵电路与外围驱动电路集成。 外围驱动电路中的金属线与像素电极同时形成。 因此，处理顺序和结构都不复杂。

公开(公告)号：US6013542A

公开(公告)日：2000-01-11

申请号：US717940

申请日：1996-09-23

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasushi Ogata ,  Satoshi Teramoto

IPC分类号： G02F1/1362 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L21/82

CPC分类号： G02F1/13454 ,  H01L21/768 ,  H01L21/76838 ,  H01L27/124

摘要： In a method of manufacturing a semiconductor device, a gate wiring and a source wiring of a thin film transistor in the course of manufacture are connected, and are finally divided, so that it is possible to prevent breakage of a gate insulating film due to influence of plasma at the formation of various insulating films or conductive films. Specifically, openings are formed at every formation of interlayer insulating films to first layer wirings to be finally divided, and dummy electrodes not serving as electrodes are formed in the openings. When patterning a final electrode, openings are further formed in the dummy electrodes, and the first layer wirings are divided through the openings.

摘要翻译： 在制造半导体器件的方法中，在制造过程中连接薄膜晶体管的栅极布线和源极布​​线，并且最终被分割，从而可以防止由于影响导致的栅极绝缘膜的破裂 的等离子体形成各种绝缘膜或导电膜。 具体地，在每层形成层间绝缘膜时形成开口，以将第一层布线最终分割，并且在开口中形成不用作电极的虚拟电极。 当对最终电极进行构图时，在虚拟电极中进一步形成开口，并且第一层布线通过开口分开。

公开(公告)号：USRE43450E1

公开(公告)日：2012-06-05

申请号：US10678139

申请日：2003-10-06

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/336 ,  C30B1/02 ,  C30B31/02 ,  H01L29/786

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L29/78675

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。

公开(公告)号：US07553716B2

公开(公告)日：2009-06-30

申请号：US11322653

申请日：2006-01-03

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/31662 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757

摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

公开(公告)号：US06991976B2

公开(公告)日：2006-01-31

申请号：US10293156

申请日：2002-11-12

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/31662 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757

摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

公开(公告)号：US06482752B1

公开(公告)日：2002-11-19

申请号：US08685788

申请日：1996-07-24

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21461

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US6071766A

公开(公告)日：2000-06-06

申请号：US115838

申请日：1998-07-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L21/2022 ,  C03C17/3482 ,  H01L29/78675 ,  C03C2218/152 ,  C03C2218/153

摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.

摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。

公开(公告)号：US6048758A

公开(公告)日：2000-04-11

申请号：US789193

申请日：1997-01-23

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/2022

摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

摘要翻译： 将少量的镍引入形成在玻璃基板上的非晶硅膜中，通过加热使非晶硅膜结晶。 在这种情况下，镍元素保留在结晶硅膜中。 在结晶硅膜的表面上形成非晶硅膜，然后进行热处理。 通过这种热处理，镍元素在非晶硅膜中扩散，从而能够降低结晶硅膜中的镍浓度。

公开(公告)号：US07691692B2

公开(公告)日：2010-04-06

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。