公开(公告)号：US20110129596A1

公开(公告)日：2011-06-02

申请号：US12801601

申请日：2010-06-16

申请人： Jung-Min Lee ,  Choong-Ho Lee ,  Yoon-Chan Oh ,  Soo-Jin Park

发明人： Jung-Min Lee ,  Choong-Ho Lee ,  Yoon-Chan Oh ,  Soo-Jin Park

IPC分类号： B05D5/12 ,  B05C9/00 ,  B05D3/00

CPC分类号： H01L51/0008

摘要： A deposition apparatus that improves deposition characteristics and the uniformity of a deposited layer, and a method of manufacturing an organic light emitting device using the deposition apparatus. The deposition apparatus includes: a base; a heat blocking layer formed on the base; a heat emitting layer patterned into stripes and formed on the heat blocking layer to heat a deposition material to be deposited; and a barrier rib formed and patterned on the heat blocking layer to define a space in which the deposition material is disposed.

摘要翻译： 改善沉积特性和沉积层的均匀性的沉积设备，以及使用沉积设备制造有机发光器件的方法。 沉积设备包括：基底; 形成在基底上的热阻层; 形成条纹并形成在热阻层上的发热层，以加热待沉积的沉积材料; 以及在所述热阻层上形成和图案化以限定其中设置所述沉积材料的空间的障壁。

公开(公告)号：US20110095377A1

公开(公告)日：2011-04-28

申请号：US12984860

申请日：2011-01-05

申请人： Jong-Sun Sel ,  Jung-Dal Choi ,  Choong-Ho Lee ,  Ju-Hyuck Chung ,  Hee-Soo Kang ,  Dong-uk Choi

发明人： Jong-Sun Sel ,  Jung-Dal Choi ,  Choong-Ho Lee ,  Ju-Hyuck Chung ,  Hee-Soo Kang ,  Dong-uk Choi

IPC分类号： H01L27/088

CPC分类号： H01L23/485 ,  H01L21/76804 ,  H01L21/76816 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments, a semiconductor memory device includes a substrate that includes a cell array region and a peripheral circuit region. The semiconductor memory device further includes a device isolation pattern on the substrate. The device isolation pattern defines a first active region and a second active region within the cell array region and a third active region in the peripheral circuit region. The semiconductor memory device further includes a first common source region, a plurality of first source/drain regions, and a first drain region in the first active region. The semiconductor memory device further includes a second common source region, a plurality of second source/drain regions, and a second drain region in the second active region. The semiconductor memory device further includes a third source/drain region in the third active region. The semiconductor memory device further includes a common source line contacting the first and second common source regions.

摘要翻译： 在一些实施例中，半导体存储器件包括包括单元阵列区域和外围电路区域的衬底。 半导体存储器件还包括在衬底上的器件隔离图案。 器件隔离图案限定了单元阵列区域内的第一有源区和第二有源区以及外围电路区中的第三有源区。 半导体存储器件还包括第一有源区中的第一公共源极区，多个第一源极/漏极区和第一漏极区。 半导体存储器件还包括第二公共源极区域，多个第二源极/漏极区域和第二有源区域中的第二漏极区域。 半导体存储器件还包括第三有源区中的第三源/漏区。 半导体存储器件还包括与第一和第二公共源极区域接触的公共源极线。

公开(公告)号：US07842570B2

公开(公告)日：2010-11-30

申请号：US12137976

申请日：2008-06-12

申请人： Albert Fayrushin ,  Byung-Yong Choi ,  Choong-Ho Lee

发明人： Albert Fayrushin ,  Byung-Yong Choi ,  Choong-Ho Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： In methods of manufacturing a memory device, a tunnel insulation layer is formed on a substrate. A floating gate having a substantially uniform thickness is formed on the tunnel insulation layer. A dielectric layer is formed on the floating gate. A control gate is formed on the dielectric layer. A flash memory device including the floating gate may have more uniform operating characteristics.

摘要翻译： 在制造存储器件的方法中，在衬底上形成隧道绝缘层。 在隧道绝缘层上形成具有基本均匀厚度的浮栅。 在浮栅上形成介电层。 在电介质层上形成控制栅极。 包括浮动栅极的闪速存储器件可具有更均匀的操作特性。

公开(公告)号：US07834391B2

公开(公告)日：2010-11-16

申请号：US12107918

申请日：2008-04-23

申请人： Hee-Soo Kang ,  Choong-Ho Lee

发明人： Hee-Soo Kang ,  Choong-Ho Lee

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： G11C16/0483 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568

摘要： Coupling among adjacent rows of memory cells on an integrated circuit substrate may reduced by forming the adjacent rows of memory cells on adjacent semiconductor pedestals that extend different distances away from the integrated circuit substrate. NAND flash memory devices that include different pedestal heights and fabrication methods for integrated circuit memory devices are also disclosed.

摘要翻译： 在集成电路基板上的相邻行存储单元之间的耦合可通过在距离集成电路基板延伸不同距离的相邻半导体基座上形成相邻行的存储单元来减小。 还公开了包括不同基座高度的NAND闪存器件和用于集成电路存储器件的制造方法。

公开(公告)号：US07807009B2

公开(公告)日：2010-10-05

申请号：US12228994

申请日：2008-08-18

申请人： Jung-Min Lee ,  Choong-Ho Lee ,  Seok-Joon Yoon ,  Won-Kyu Choe ,  Tae-Wook Kang

发明人： Jung-Min Lee ,  Choong-Ho Lee ,  Seok-Joon Yoon ,  Won-Kyu Choe ,  Tae-Wook Kang

IPC分类号： B32B37/06

CPC分类号： B32B37/0046 ,  B23K26/0661 ,  B32B37/065 ,  B32B2309/02 ,  B32B2310/0843 ,  B32B2457/202 ,  B32B2457/206 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/67126 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

摘要： An hermetic sealing apparatus is discussed. The apparatus may include one or more of the following a glass mask disposed on an upper surface of a first substrate, a support member disposed on an upper surface of the glass mask, a laser irradiation member positioned spaced on the upper surface of the glass mask, a plurality of lower support members disposed in a contour region of a lower surface of the second substrate, and pressing members disposed on a lower surface of the lower support members.

摘要翻译： 讨论了一种密封装置。 该装置可以包括以下中的一个或多个设置在第一基板的上表面上的玻璃掩模，设置在玻璃掩模的上表面上的支撑构件，位于玻璃掩模的上表面上的激光照射构件 ，设置在所述第二基板的下表面的轮廓区域中的多个下支撑构件和设置在所述下支撑构件的下表面上的按压构件。

公开(公告)号：US20090273655A1

公开(公告)日：2009-11-05

申请号：US11720959

申请日：2005-06-14

申请人： Jin-Cheol Song ,  Tae-Keun Park ,  Choong-Ho Lee ,  Sang-Yup Yu

发明人： Jin-Cheol Song ,  Tae-Keun Park ,  Choong-Ho Lee ,  Sang-Yup Yu

IPC分类号： B41J2/175

CPC分类号： B41J2/17523 ,  B41J2/17513 ,  B41J2/17553 ,  B41J2/17566

摘要： A replaceable ink reservoir adapted to an inkjet print system is provided. Since the inkjet print system of the conventional arts drives an air pump to inject air into the ink reservoir to discharge the ink stored in the ink storage pack to a printer cartridge, serious noise may be generated when the air pump is driven. In addition, in order to discharge the ink through the injection of the air, the ink reservoir should be one integrated body having a hermetically sealed structure, therefore, a user cannot visually check an ink storage level in the ink storage pack from the exterior of the ink reservoir. Further, since a nozzle connecting pipe is always connected to an ink outlet port connected to a front end of the ink storage pack, it is difficult to uniformly maintain discharge pressure of the ink, thereby causing an error image to be formed on a recording medium. Therefore, the present invention provides an ink reservoir for an inkjet print system, which is visually checkable an ink discharge amount in an ink storage pack and refilling the ink in the ink storage pack received in the ink reservoir by constituting the ink reservoir using transparent assemblies, discharges the ink in the ink storage pack received in the ink reservoir using inherent expansion of an expansion member, and includes a dual safety device and a dual cover installed at front ends of the ink storage pack and the ink outlet port to block ink discharged from the ink storage pack when a print operation is completed, thereby preventing unnecessary consumption of the ink.

摘要翻译： 提供了适用于喷墨打印系统的可更换的墨水储存器。 由于传统技术的喷墨打印系统驱动空气泵将空气喷射到墨水容器中以将存储在墨水存储包中的墨水排出到打印机墨盒，所以当驱动空气泵时可能产生严重的噪音。 此外，为了通过喷射空气排出墨水，墨水储存器应该是具有气密密封结构的一个整体，因此，用户不能从墨水存储包的外部目视检查墨水存储水平 墨水盒。 此外，由于喷嘴连接管总是连接到与储墨盒的前端连接的墨出口，所以难以均匀地维持墨的排出压力，从而在记录介质上形成误差图像 。 因此，本发明提供了一种用于喷墨打印系统的墨水储存器，其目视上可以检查墨水储存包装中的墨水排出量，并且通过使用透明组件构成墨水储存器来重新填充容纳在墨水储存器中的墨水储存包装中的墨水 利用扩展构件的固有膨胀将容纳在墨水储存器中的墨水储存器中的墨水排出，并且包括双重安全装置和安装在墨水存储包的前端的双盖和用于阻止墨水排放的墨水出口 当打印操作完成时从墨水存储包中，从而防止墨水的不必要的消耗。

公开(公告)号：US20090229745A1

公开(公告)日：2009-09-17

申请号：US12228994

申请日：2008-08-18

申请人： Jung-Min Lee ,  Choong-Ho Lee ,  Seok-Joon Yoon ,  Won-Kyu Choe ,  Tae-Wook Kang

发明人： Jung-Min Lee ,  Choong-Ho Lee ,  Seok-Joon Yoon ,  Won-Kyu Choe ,  Tae-Wook Kang

IPC分类号： B32B37/06

CPC分类号： B32B37/0046 ,  B23K26/0661 ,  B32B37/065 ,  B32B2309/02 ,  B32B2310/0843 ,  B32B2457/202 ,  B32B2457/206 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/67126 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

摘要： An hermetic sealing apparatus is discussed. The apparatus may include one or more of the following a glass mask disposed on an upper surface of a first substrate, a support member disposed on an upper surface of the glass mask, a laser irradiation member positioned spaced on the upper surface of the glass mask, a plurality of lower support members disposed in a contour region of a lower surface of the second substrate, and pressing members disposed on a lower surface of the lower support members.

摘要翻译： 讨论了一种密封装置。 该装置可以包括以下中的一个或多个设置在第一基板的上表面上的玻璃掩模，设置在玻璃掩模的上表面上的支撑构件，位于玻璃掩模的上表面上的激光照射构件 ，设置在所述第二基板的下表面的轮廓区域中的多个下支撑构件和设置在所述下支撑构件的下表面上的按压构件。

公开(公告)号：US20090190398A1

公开(公告)日：2009-07-30

申请号：US12289847

申请日：2008-11-05

申请人： Hee-Soo Kang ,  Choong-Ho Lee ,  Dong-Uk Choi

发明人： Hee-Soo Kang ,  Choong-Ho Lee ,  Dong-Uk Choi

IPC分类号： G11C16/04 ,  G11C16/06

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5641

摘要： A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.

摘要翻译： 一种在包括至少一个偶数位线和至少一个奇数位线的NAND闪存器件中编程数据的方法，所述方法包括将N位数据编程到耦合到所述至少一个偶数位线或所述至少一个奇数位线 以及将M位数据编程到耦合到所述至少一个偶数位线和所述至少一个奇数位线中的另一个的第二单元中，其中N是大于1的自然数，M是大于N的自然数。

公开(公告)号：US20080164509A1

公开(公告)日：2008-07-10

申请号：US11972243

申请日：2008-01-10

申请人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

发明人： Seung-Chul Lee ,  Keun-Ho Lee ,  Choong-Ho Lee ,  Byung-Yong Choi

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/115 ,  H01L27/11524

摘要： A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.

摘要翻译： 非易失性存储器件包括第一导电类型的半导体衬底，半导体衬底上的多个字线，多条字线包括第二导电类型的浮置栅极。 地线选择线和串选择线设置在字线的相应侧上。 第二导电类型的杂质区域位于与地选线相邻的第一字线的正下方。 该器件还可以包括第二导电类型的第二杂质区域，位于与串选择线相邻的第二字线下方。 在另外的实施例中，器件还可以包括在第一字线和第二字线之间的相应第三字线下方的第二导电类型的第三杂质区。 还提供了形成这种装置的方法。

公开(公告)号：US20070205459A1

公开(公告)日：2007-09-06

申请号：US11653359

申请日：2007-01-16

申请人： Eun-Suk Cho ,  Dong-Gun Park ,  Choong-Ho Lee ,  Jong-Jin Lee ,  Jeong-Dong Choe

发明人： Eun-Suk Cho ,  Dong-Gun Park ,  Choong-Ho Lee ,  Jong-Jin Lee ,  Jeong-Dong Choe

IPC分类号： H01L29/788

CPC分类号： H01L27/11568 ,  B82Y10/00 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7854 ,  H01L29/7881 ,  H01L29/792

摘要： A nonvolatile memory device includes a semiconductor pin including a first semiconductor pattern, a second semiconductor pattern on the first semiconductor pattern, and a third semiconductor pattern, disposed between the first semiconductor pattern and the second semiconductor pattern, connecting the first semiconductor pattern and the second semiconductor pattern, a charge storage layer on the second semiconductor pattern with a tunneling insulation layer interposed therebetween, and a gate electrode on the charge storage layer with a blocking insulation layer interposed therebetween, wherein a width of the second semiconductor pattern is greater than a width of the third semiconductor pattern.

摘要翻译： 非易失性存储器件包括：半导体引脚，包括第一半导体图案，第一半导体图案上的第二半导体图案和设置在第一半导体图案和第二半导体图案之间的第三半导体图案，将第一半导体图案和第二半导体图案 半导体图案，在第二半导体图案上的电荷存储层，其间插入有隧道绝缘层，以及在电荷存储层上的栅电极，其间插入有阻挡绝缘层，其中第二半导体图案的宽度大于宽度 的第三半导体图案。