公开(公告)号：US10692760B2

公开(公告)日：2020-06-23

申请号：US15860565

申请日：2018-01-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Chang Sun ,  Po-Chin Chang ,  Akira Mineji ,  Zi-Wei Fang ,  Pinyen Lin

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H01L21/8234 ,  H01L27/088

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes following steps. A MEOL structure is formed on an etch stop layer. A patterned masking layer with at least one opening is formed on the MEOL structure and a first etching process is performed to form a trench in the MEOL structure. A second etching process is performed to modify at least one sidewall of the trench.