公开(公告)号：US20110177464A1

公开(公告)日：2011-07-21

申请号：US13074680

申请日：2011-03-29

申请人： Takanobu Takeda ,  Tamotsu Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Akinobu Tanaka ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Tamotsu Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Akinobu Tanaka ,  Osamu Watanabe

IPC分类号： G03F7/20

CPC分类号： G03F7/0382 ,  G03F7/20

摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.

摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥接形成最小化。

公开(公告)号：US07618763B2

公开(公告)日：2009-11-17

申请号：US11556830

申请日：2006-11-06

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba ,  Tsugio Kaneda

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba ,  Tsugio Kaneda

IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108

摘要： A hydroxystyrene/indene/alkoxyisobutoxystyrene copolymer having Mw of 1,000-500,000 is formulated as a base resin to give a resist composition, typically chemically amplified positive resist composition. The composition exhibits a high resolution, a satisfactory resist pattern profile after development, and improved etch resistance and is thus suitable as a micropatterning material for the fabrication of VLSI.

摘要翻译： 将Mw为1,000-500,000的羟基苯乙烯/茚/烷氧基异丁氧基苯乙烯共聚物配制成基础树脂，得到抗蚀剂组合物，通常为化学增强的正性抗蚀剂组合物。 该组合物显示出高分辨率，显影后令人满意的抗蚀剂图案轮廓，并且改善了耐蚀刻性，因此适合作为用于制造VLSI的微图案材料。

公开(公告)号：US20070219338A1

公开(公告)日：2007-09-20

申请号：US11717136

申请日：2007-03-13

申请人： Takanobu Takeda ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe

IPC分类号： C08G63/00

CPC分类号： C09D125/18 ,  C08F12/24 ,  C08F293/005 ,  C08F297/00 ,  C08F297/02 ,  C08F297/026 ,  C08L53/00 ,  C08L2666/02

摘要： A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a Mw of up to 20,000 is provided. When a polymer comprising hydroxystyrene units is used in the form of a block copolymer or a blend with another polymer, the material is capable of self-assembling to form a pattern of microdomain structure having a size of up to 20 nm that is difficult to achieve with prior art block copolymers.

摘要翻译： 提供了一种自组装聚合物膜材料，其包含包含重复羟基苯乙烯单元并且具有高达20,000的Mw的聚合物。 当包含羟基苯乙烯单元的聚合物以嵌段共聚物的形式或与另一种聚合物的共混物的形式使用时，该材料能够自组装形成具有高达20nm的尺寸的难以实现的微区结构图案 与现有技术的嵌段共聚物。

公开(公告)号：US07267923B2

公开(公告)日：2007-09-11

申请号：US10852157

申请日：2004-05-25

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

IPC分类号： G03F7/004

CPC分类号： G03F7/0392 ,  G03F7/0397

摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

公开(公告)号：US06861198B2

公开(公告)日：2005-03-01

申请号：US10351097

申请日：2003-01-23

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Wataru Kusaki ,  Ryuji Koitabashi

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Wataru Kusaki ,  Ryuji Koitabashi

IPC分类号： C08F12/22 ,  C08F20/12 ,  C08F32/08 ,  G03F7/004 ,  G03F7/033 ,  G03F7/038 ,  H01L21/027 ,  G03C1/72 ,  C03F7/033

CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/143

摘要： A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.

摘要翻译： 一种负型抗蚀剂材料，其至少包含含有由以下通式（1）表示的重均单元和重均分子量为1,000至500,000的高聚合物。 提供了负的抗蚀剂材料，特别是具有化学放大型的负型抗蚀剂材料，其在曝光后显示出高灵敏度，分辨率，曝光宽容度和工艺适应性以及良好的图案形状，并且还显示出优异的耐蚀刻性。

公开(公告)号：US07977027B2

公开(公告)日：2011-07-12

申请号：US11876298

申请日：2007-10-22

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

IPC分类号： G03F7/039 ,  G03F7/26

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.

摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。

公开(公告)号：US20080090179A1

公开(公告)日：2008-04-17

申请号：US11902760

申请日：2007-09-25

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Tamotsu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Ryuji Koitabashi ,  Keiichi Masunaga ,  Tamotsu Watanabe

IPC分类号： C08G65/34 ,  C08G73/24 ,  G03C1/00 ,  G03C5/00

CPC分类号： G03F7/0397 ,  Y10S430/106

摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.

摘要翻译： 公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。 可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性 抵抗性。

公开(公告)号：US20070148584A1

公开(公告)日：2007-06-28

申请号：US10852157

申请日：2004-05-25

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

IPC分类号： G03C1/00

CPC分类号： G03F7/0392 ,  G03F7/0397

摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

公开(公告)号：US06835804B2

公开(公告)日：2004-12-28

申请号：US10003121

申请日：2001-12-06

申请人： Takanobu Takeda ,  Osamu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe

IPC分类号： C08F606

CPC分类号： G03F7/0392 ,  C08F8/12 ,  C08F2800/20 ,  C08F212/14

摘要： A polymer comprising recurring units of formula (2) is prepared by effecting deblocking reaction on a polymer comprising recurring units of formula (1) in the presence of an acid catalyst. In the formulae, R1 and R4 are H or methyl, R2 and R3 are C1-C10 alkyl, or R2 and R3 may form a ring, R5 is H, hydroxyl, alkyl, alkoxy or halogen, R6 and R7 are H, methyl, alkoxycarbonyl, cyano or halogen, R8 is C4-C20 tertiary alkyl, n is an integer of 0 to 4, p is a positive number, q and r each are 0 or a positive number, exclusive of q=r=0, p1 is a positive number, p2 is 0 or a positive number, and p1+p2=p. The polymer thus produced has a narrower molecular weight distribution than polymers produced by the prior art methods. A resist composition comprising the polymer as a base resin has advantages including a dissolution contrast of resist film, high resolution, exposure latitude, process flexibility, good pattern profile after exposure, and minimized line edge roughness.

摘要翻译： 包含式（2）的重复单元的聚合物通过在酸催化剂存在下对包含式（1）的重复单元的聚合物进行解封反应来制备。在式中，R 1和R 4是H 或甲基，R 2和R 3是C 1 -C 10烷基，或R 2和R 3可以形成环，R 5是H，羟基，烷基，烷氧基或卤素， 6>和R 7是H，甲基，烷氧基羰基，氰基或卤素，R 8是C 4 -C 20叔烷基，n是0至4的整数，p是正数，q和r各自为0 或正数，不包括q = r = 0，p1为正数，p2为0或正数，p1 + p2 = p。 如此制备的聚合物具有比通过现有技术方法制备的聚合物更窄的分子量分布。 包含聚合物作为基础树脂的抗蚀剂组合物具有抗蚀剂膜的溶解对比度，高分辨率，曝光宽容度，工艺柔韧性，曝光后的良好图案轮廓和最小化线边缘粗糙度的优点。

公开(公告)号：US06641975B2

公开(公告)日：2003-11-04

申请号：US09928455

申请日：2001-08-14

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Kazunori Maeda ,  Wataru Kusaki ,  Shigehiro Nagura

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Kazuhiro Hirahara ,  Kazunori Maeda ,  Wataru Kusaki ,  Shigehiro Nagura

IPC分类号： G03C173

CPC分类号： C08F220/30 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

摘要： A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.