公开(公告)号：US08389392B2

公开(公告)日：2013-03-05

申请号：US12866852

申请日：2009-02-09

Applicant: Jan Sonsky ,  Radu Surdeanu

Inventor： Jan Sonsky ,  Radu Surdeanu

IPC: H01L21/3205

CPC classification number: H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7856

Abstract: The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of the fin between its opposite lateral faces. This structure corresponds with a processing method that starts from a covered basic FinFET structure with a continuous first gate layer, and proceeds to remove parts of the first gate layer and of a first gate-isolation layer through a contact opening to the gate layer. Subsequently, a replacement gate-isolation layer that at the same time forms the gate separation layer fabricated, followed by filling the tunnel with a replacement gate layer and a metal filling.

Abstract translation: 本发明涉及具有分离栅极的FinFET及其制造方法。 在第一和第二栅电极之间的电介质栅极分隔层在从第一栅极层到第二栅极层的方向上具有小于翅片在其相对侧面之间的横向延伸的方向上的延伸。 该结构对应于从具有连续的第一栅极层的覆盖的基本FinFET结构开始的处理方法，并且通过到栅极层的接触开口去除第一栅极层和第一栅极隔离层的部分。 随后，替代栅极隔离层同时形成栅极分离层，随后用替换栅极层和金属填充物填充隧道。

公开(公告)号：US20120086335A1

公开(公告)日：2012-04-12

申请号：US13378052

申请日：2010-06-09

Applicant: Viet Hoang Nguyen ,  Pascal Bancken ,  Radu Surdeanu

Inventor： Viet Hoang Nguyen ,  Pascal Bancken ,  Radu Surdeanu

IPC: B60Q1/26 ,  B60Q1/44 ,  B60Q1/30

CPC classification number: B60Q1/2607 ,  B60Q11/002 ,  B60Q2400/20

Abstract: A lighting system for exterior lights of an automobile comprises a first lighting unit (10,12,14,16) primarily for outputting a first automotive light signal and a failure detection system (26) for detecting a failure of the first lighting unit (10,12,14,16). A second lighting unit is primarily for outputting a second automotive light signal. The second lighting unit comprises an LED light unit. A controller (30) is adapted to determine if there is failure of the first lighting unit, and if there is failure of the first lighting unit, to use the second lighting unit to generate the first automotive light signal. This is in response to an output request from the first lighting unit (10,12,14,16).

Abstract translation: 一种用于汽车外部照明的照明系统，包括主要用于输出第一汽车光信号的第一照明单元（10,12,14,16）和用于检测第一照明单元（10）的故障的故障检测系统（26） ，12,14,16）。 第二照明单元主要用于输出第二汽车光信号。 第二照明单元包括LED灯单元。 控制器（30）适于确定第一照明单元是否有故障，并且如果第一照明单元出现故障，则使用第二照明单元产生第一汽车光信号。 这是响应于来自第一照明单元（10,12,14,16）的输出请求。

公开(公告)号：US20100315019A1

公开(公告)日：2010-12-16

申请号：US12864740

申请日：2009-01-27

Applicant: Gian Hoogzaad ,  Hans Schmitz ,  Wilhelmus H. M. Langeslag ,  Radu Surdeanu

Inventor： Gian Hoogzaad ,  Hans Schmitz ,  Wilhelmus H. M. Langeslag ,  Radu Surdeanu

IPC: H05B37/02 ,  G01K7/00

CPC classification number: H05B33/0818 ,  G01K7/01

Abstract: A driver circuit (10) for a light emitting diode comprises a first driver circuit (32, 32′, 32′) for generating a first current output for driving the light emitting diode, wherein the first driver circuit has a control switch for interrupting the supply of the first current output. A second driver circuit (50) is for generating a second current output for driving the light emitting diode, and the second driver circuit also has a control switch for interrupting the supply of the second current output. The overall output of the driver circuit comprises a pulse width modulated output current which alternates between a high current (Ihigh) generated by the first driver circuit and a low current (Ilow) generated by the second driver circuit. By providing separate driver circuits for two different current requirements, the circuits can be optimised for each function. For example the high current value can comprise an LED operation current, and the low current value can comprise a non-zero measurement current.

Abstract translation: 用于发光二极管的驱动电路（10）包括用于产生用于驱动发光二极管的第一电流输出的第一驱动电路（32,32'，32'），其中第一驱动电路具有用于中断 提供第一个电流输出。 第二驱动电路（50）用于产生用于驱动发光二极管的第二电流输出，并且第二驱动电路还具有用于中断第二电流输出的供给的控制开关。 驱动电路的总体输出包括在由第一驱动电路产生的高电流（Ihigh）和由第二驱动电路产生的低电流（I low）之间交替的脉宽调制输出电流。 通过为两种不同的电流要求提供单独的驱动电路，可以针对每个功能优化电路。 例如，高电流值可以包括LED操作电流，并且低电流值可以包括非零测量电流。

公开(公告)号：US20100264492A1

公开(公告)日：2010-10-21

申请号：US11629419

申请日：2006-06-06

Applicant: Radu Surdeanu ,  Gerben Doornbos ,  Youri Ponomarev ,  Josine Loo

Inventor： Radu Surdeanu ,  Gerben Doornbos ,  Youri Ponomarev ,  Josine Loo

IPC: H01L29/786 ,  H01L21/86

CPC classification number: H01L29/78648 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78681

Abstract: A semiconductor on insulator semiconductor device has metal or silicide source and drain contact regions (38, 40), activated source and drain regions (30, 32) and a body region (34). The structure may be a double gated SOI structure or a fully depleted (FD) SOI structure. A sharp intergace and low resistance are achieved with a process that uses spacers (28) and which fully replaces the full thickness of a semiconductor layer with the contact regions.

Abstract translation: 半导体绝缘体上半导体器件具有金属或硅化物源极和漏极接触区域（38,40），激活的源极和漏极区域（30,32）和体区域（34）。 该结构可以是双门控SOI结构或完全耗尽（FD）SOI结构。 通过使用间隔物（28）并且完全用接触区域完全替代半导体层的全部厚度的工艺，实现了锐利的间隙和低电阻。

公开(公告)号：US20100041186A1

公开(公告)日：2010-02-18

申请号：US12521963

申请日：2007-12-12

Applicant: Radu Surdeanu

Inventor： Radu Surdeanu

IPC: H01L21/336

CPC classification number: H01L29/6653 ,  H01L29/66356 ,  H01L29/66659 ,  H01L29/7391

Abstract: A method of manufacturing an I-MOS device includes forming a semiconductor layer (2) on a buried insulating layer (4). A gate structure (23) including a gate stack (14) is formed on the semiconductor layer, and used to (5) self align the formation of a source region (28) by implantation. Then, an etch step is used to selectively etch the gate structure (23) and this is followed by forming a drain region (36) by implantation. The method can precisely control the i-region length (38) between source region (28) and gate stack (14).

Abstract translation: 一种制造I-MOS器件的方法包括在掩埋绝缘层（4）上形成半导体层（2）。 在半导体层上形成包括栅叠层（14）的栅结构（23），用于（5）通过注入自对准源极区（28）的形成。 然后，使用蚀刻步骤来选择性地蚀刻栅极结构（23），然后通过注入形成漏极区域（36）。 该方法可以精确控制源极区域（28）和栅极叠层（14）之间的i区域长度（38）。

公开(公告)号：US20080258186A1

公开(公告)日：2008-10-23

申请号：US12158104

申请日：2006-12-12

Applicant: Radu Surdeanu ,  Mark Van Dal

Inventor： Radu Surdeanu ,  Mark Van Dal

IPC: H01L29/00 ,  H01L21/8236

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28518 ,  H01L29/41775 ,  H01L29/66636 ,  H01L29/78654

Abstract: A silicon on insulator device has a silicon layer (10) over a buried insulating layer (12). A nickel layer is deposited over a gate (16), on sidewall spacers (22) on the sides of the gate (16), and in a cavity on both sides of the gate (16) in the silicon layer (10). A doped amorphous silicon layer fills the cavity. Annealing then takes place which forms polysilicon (40) over the sidewall spacers (22) and gate (16), but where the nickel is adjacent to single crystal silicon (10) a layer of NiSi (44) migrates to the surface leaving doped single crystal silicon (42) behind, forming in one step a source, drain, and source and drain contacts.

Abstract translation: 硅绝缘体器件在掩埋绝缘层（12）上方具有硅层（10）。 镍层沉积在栅极（16）上，位于栅极（16）侧面上的侧壁间隔物（22）上，并沉积在硅层（10）中的栅极（16）两侧的空腔中。 掺杂的非晶硅层填充空腔。 然后发生在侧壁间隔物（22）和栅极（16）上形成多晶硅（40）的退火，但是当镍与单晶硅（10）相邻时，一层NiSi（44）迁移到表面，离开掺杂单 晶体硅（42）后面，形成一个源极，漏极以及源极和漏极触点。

公开(公告)号：US20070082450A1

公开(公告)日：2007-04-12

申请号：US10575288

申请日：2004-10-07

Applicant: Marcus Van Dal ,  Radu Surdeanu

Inventor： Marcus Van Dal ,  Radu Surdeanu

IPC: H01L21/336 ,  H01L29/788

CPC classification number: H01L29/6659 ,  H01L21/26586 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/7833

Abstract: The invention relates to a semiconductor device (10) with a substrate and a semiconductor body (1) comprising a first FET (3) with a source (2) and a drain (3) that are provided with connection regions (2B, 3B) of a metal silicide, and that are connected to source and drain extensions (2A, 3A) bordering a channel region (4) below a gate (6) and having a smaller thickness and a lower doping concentration than the source (2) and the drain (3). The source (2) and drain (3) and the source and drain extensions (2A, 3A) are connected to each other by means of an intermediate region (2C, 3C) of the first conductivity type having a thickness and a doping concentration ranging between the thickness and doping concentration of the source (2) and drain (3) and the extensions (2A, 3A) thereof. In this way, the occurrence of leakage currents and the risk of a short circuit between the connection regions (2B, 3B) and the substrate is limited, while the advantages of the use of source and drain extensions (2A, 3A) are preserved. Preferably, the intermediate regions (2C, 3C) are positioned below spacers (7) next to the gate (6), and they are preferably formed using a, preferably tilted, ion implantation.

Abstract translation: 本发明涉及具有衬底和半导体本体（1）的半导体器件（10），该半导体器件（1）包括具有源极（2）和漏极（3）的第一FET（3），所述第一FET（3）设置有连接区域 B），并且连接到与栅极（6）下方的沟道区域（4）接近并且具有比源极更小的厚度和更低的掺杂浓度的源极和漏极延伸部（2A，3A） 2）和排水管（3）。 源极（2）和漏极（3）以及源极和漏极延伸部分（2A，3A）通过具有厚度的第一导电类型的中间区域（2C，3C）彼此连接，并且 源极（2）和漏极（3）的厚度和掺杂浓度之间的掺杂浓度以及其延伸部（2A，3A）之间的掺杂浓度。 以这种方式，漏电流的发生和连接区域（2B，3B）与衬底之间的短路的风险受到限制，而使用源极和漏极延伸部分（2A，3A） ）被保留。 优选地，中间区域（2C，3C）位于靠近栅极（6）的隔板（7）的下方，并且它们优选地使用优选倾斜的离子注入形成。

公开(公告)号：US09939141B2

公开(公告)日：2018-04-10

申请号：US13424848

申请日：2012-03-20

Applicant: Radu Surdeanu ,  Damien Lenoble

Inventor： Radu Surdeanu ,  Damien Lenoble

IPC: F28D17/00 ,  F24D11/00 ,  F28D20/00 ,  F21V29/54 ,  F21S2/00 ,  F21V29/00 ,  H01L23/427 ,  F28D20/02 ,  H01L33/62 ,  F28F13/00 ,  F28D21/00 ,  F21V29/50 ,  F21V29/51 ,  F21V29/71 ,  F21Y115/10

CPC classification number: F21V29/54 ,  F21S2/005 ,  F21V29/00 ,  F21V29/50 ,  F21V29/51 ,  F21V29/71 ,  F21Y2115/10 ,  F28D20/02 ,  F28D2021/0029 ,  F28F2013/008 ,  H01L23/427 ,  H01L23/4275 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An active thermal management device and method, in which a phase change material unit, comprising at least one phase change material arranged in series or parallel, is connectable to a source of thermal energy, such as LEDs at a first operating condition. Thermal energy from the source of thermal energy is stored in the phase change material unit. The phase change material unit is connectable to a sink of thermal energy, such as second LEDs at a second operating condition. The thermal energy stored in the phase change material unit may be re-used. The first operating condition can include a 15V supply voltage, and the second operating condition can include either no supply voltage, or a lower 9V supply voltage of 9V, such that heat from the first LEDs, which may be over-temperature, can pre-heat the second LEDs, improving thermal and optical matching.

公开(公告)号：US20170032367A1

公开(公告)日：2017-02-02

申请号：US14324203

申请日：2014-07-06

Applicant: Joost van Beek ,  Radu Surdeanu ,  Franciscus Widdershoven ,  Patrice Gamand ,  Rik Jos ,  Gerardo Daalderop ,  Hans Rijns

Inventor： Joost van Beek ,  Radu Surdeanu ,  Franciscus Widdershoven ,  Patrice Gamand ,  Rik Jos ,  Gerardo Daalderop ,  Hans Rijns

IPC: G06Q20/40 ,  G06Q20/38 ,  G06Q20/32 ,  G06K7/10 ,  G01S3/802 ,  G01S11/14

CPC classification number: G06Q20/401 ,  G01S3/802 ,  G01S11/14 ,  G06K7/10297 ,  G06Q20/3278 ,  G06Q20/382 ,  H04B11/00

Abstract: A device is disclosed. The device includes a plurality of microphones to receive ultra-sound signals, wherein the ultra-sound signals include an encoded data. The device also includes a microcontroller coupled to the plurality of microphones. The microcontroller is configured to detect the ultra-sound signals through the plurality of microphones. The detection of the ultra-sound signals includes calculating an angle of arrival of the ultra-sound signals at a microphone in the plurality of microphones. The microcontroller is configured to perform a transaction based on the encoded data received via a microphone in the plurality of microphones.

Abstract translation: 公开了一种设备。 该装置包括用于接收超声信号的多个麦克风，其中超声信号包括编码数据。 该装置还包括耦合到多个麦克风的微控制器。 微控制器被配置为通过多个麦克风来检测超声信号。 超声信号的检测包括计算多个麦克风中的麦克风处的超声信号的到达角度。 微控制器被配置为基于经由多个麦克风中的麦克风接收的编码数据来执行事务。

公开(公告)号：US08749142B2

公开(公告)日：2014-06-10

申请号：US13378052

申请日：2010-06-09

Applicant: Viet Hoang Nguyen ,  Pascal Bancken ,  Radu Surdeanu

Inventor： Viet Hoang Nguyen ,  Pascal Bancken ,  Radu Surdeanu

IPC: B60Q1/26 ,  B60Q1/44 ,  B60Q1/30

CPC classification number: B60Q1/2607 ,  B60Q11/002 ,  B60Q2400/20

Abstract: A lighting system for exterior lights of an automobile comprises a first lighting unit (10,12,14,16) primarily for outputting a first automotive light signal and a failure detection system (26) for detecting a failure of the first lighting unit (10,12,14,16). A second lighting unit is primarily for outputting a second automotive light signal. The second lighting unit comprises an LED light unit. A controller (30) is adapted to determine if there is failure of the first lighting unit, and if there is failure of the first lighting unit, to use the second lighting unit to generate the first automotive light signal. This is in response to an output request from the first lighting unit (10,12,14,16).

Abstract translation: 一种用于汽车外部照明的照明系统，包括主要用于输出第一汽车光信号的第一照明单元（10,12,14,16）和用于检测第一照明单元（10）的故障的故障检测系统（26） ，12,14,16）。 第二照明单元主要用于输出第二汽车光信号。 第二照明单元包括LED灯单元。 控制器（30）适于确定第一照明单元是否有故障，并且如果第一照明单元出现故障，则使用第二照明单元产生第一汽车光信号。 这是响应于来自第一照明单元（10,12,14,16）的输出请求。