公开(公告)号：US20080135779A1

公开(公告)日：2008-06-12

申请号：US12020150

申请日：2008-01-25

申请人： Hiroyasu SHICHI ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

发明人： Hiroyasu SHICHI ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

IPC分类号： G21K5/08

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

摘要： An ion beam system includes a sample stage which holds a sample, an irradiation optical system which irradiates a sample held on the sample stage by an ion beam, and a charged particle beam observation system for observing a cross-section of the sample which is machined by the ion beam. The charged particle beam observation system includes a structure in which an axis along with an ion beam is extracted from the ion source and an axis along which the sample is irradiated are arranged so as to be at least transverse to one another.

摘要翻译： 离子束系统包括保持样品的样品台，通过离子束照射保持在样品台上的样品的照射光学系统和用于观察被加工的样品的横截面的带电粒子束观察系统 通过离子束。 带电粒子束观测系统包括其中从离子源提取轴和离子束的结构，并且将照射样品的轴布置成至少彼此横向。

公开(公告)号：US20080121803A1

公开(公告)日：2008-05-29

申请号：US11882701

申请日：2007-08-03

申请人： Tomoyasu Shojo ,  Muneyuki Fukuda ,  Naomasa Suzuki

发明人： Tomoyasu Shojo ,  Muneyuki Fukuda ,  Naomasa Suzuki

IPC分类号： G01N23/00

CPC分类号： H01J37/244 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24592

摘要： A charged particle beam apparatus for acquiring high-definition and highly contrasted observation images by detecting efficiently secondary signals without increasing aberration of the primary electron beam, detecting defects from observation images and thus increasing the inspection speed and enhancing the sensitivity of inspection. The desired area of the sample is scanned with a primary charged particle beam, and the secondary charged particles generated secondarily from the area by the irradiation of the primary charged particle beam are led to collide with the secondary electron conversing electrode, and then the secondary electrons generated by the first E×B deflector 31 arranged through an insulator on the surface of the secondary electron conversing electrode on the side of the sample is absorbed by the detector. At the same time, the deflection chromatic aberration that had been generated in the primary charged particle beam by the first E×B deflector is reduced by the second E×B deflector arranged on the first E×B deflector, to obtain high-definition and highly contrasted observation images free of shading.

摘要翻译： 一种带电粒子束装置，用于通过高效检测二次信号而不增加一次电子束的像差，从观察图像中检测缺陷，从而提高检查速度，提高检查灵敏度，从而获取高分辨率和高对比度的观察图像。 用初级带电粒子束扫描样品的期望面积，并且通过初级带电粒子束的照射从该区域二次生成的二次带电粒子被引导与二次电子转换电极碰撞，然后二次电子 由通过检测器侧面上的二次电子转换电极的表面上的绝缘体布置的第一ExB偏转器31产生的。 同时，通过布置在第一ExB偏转器上的第二ExB偏转器减少由第一ExB偏转器在一次带电粒子束中产生的偏转色差，以获得高清晰度和高对比度的观察图像， 阴影。

公开(公告)号：US20070181807A1

公开(公告)日：2007-08-09

申请号：US11700838

申请日：2007-02-01

申请人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Atsuko Fukada ,  Noritsugu Takahashi

发明人： Muneyuki Fukuda ,  Tomoyasu Shojo ,  Atsuko Fukada ,  Noritsugu Takahashi

IPC分类号： G21K7/00

CPC分类号： H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/21 ,  H01J2237/2487 ,  H01J2237/2817

摘要： An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships.

摘要翻译： 本发明的目的是能够从任何数量的检查配方中选择适合于样品的容易且快速的检查配方。 计算装置在GUI上显示多个检查配方。 检查配方包括用于控制带有多个特征的样品上照射带电粒子的带电粒子列的设置。 多个检查配方被布置和显示在由具有相互折衷关系的特征值（充电的鲁棒性变量，缺陷检查的吞吐量和缺陷检查的精度）的多个轴指定的坐标系上。

公开(公告)号：US07205554B2

公开(公告)日：2007-04-17

申请号：US11127213

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/256 ,  G21N23/225

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US20060060794A1

公开(公告)日：2006-03-23

申请号：US11258911

申请日：2005-10-27

申请人： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

发明人： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

IPC分类号： A61N5/00

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J37/026 ,  H01J37/3056

摘要： An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.

摘要翻译： 带电粒子束的装置具有带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 和其上安装有样品的样品架。 该装置具有用于防止充电的电极，其被设置为能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制施加到用于防止充电的电极的电压，以及 运动。 通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来进行充电。

公开(公告)号：US06927391B2

公开(公告)日：2005-08-09

申请号：US10878528

申请日：2004-06-29

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G01N1/32 ,  G01N1/28 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/16 ,  G01Q30/20 ,  H01J37/20 ,  H01J37/256 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H04L29/06 ,  H04L29/08

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

摘要翻译： 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US06894287B2

公开(公告)日：2005-05-17

申请号：US10603720

申请日：2003-06-26

申请人： Muneyuki Fukuda ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Osamu Watanabe

发明人： Muneyuki Fukuda ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Osamu Watanabe

IPC分类号： G01N23/04 ,  G01N1/28 ,  G01Q20/00 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/20 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01J37/3056 ,  H01J37/20

摘要： A microfabrication apparatus and a microfabrication method that, using a mechanical probe formed at its tip with a microscopic rod in sample preparation, can improve the life of the probe to 10 to 300 times from conventional 3 to 5 times in terms of the number of sample preparation enabling times.

摘要翻译： 微细加工装置和微细加工方法，使用在其尖端形成的机械探针与样品制备中的微小杆，可以将探针的寿命从样品数量的常规3至5倍提高10至300倍 准备启用时间。

公开(公告)号：US20050066899A1

公开(公告)日：2005-03-31

申请号：US10873170

申请日：2004-06-23

申请人： Muneyuki Fukuda ,  Hiroyasu Shichi

发明人： Muneyuki Fukuda ,  Hiroyasu Shichi

IPC分类号： C23C14/32 ,  C23C16/00 ,  C23C16/04 ,  C23C16/52 ,  H01J37/30 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/302

CPC分类号： C23C16/047 ,  C23C16/52 ,  H01J37/3023 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31745

摘要： Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

摘要翻译： 某些薄膜沉积和选择性蚀刻技术可能包括分别与沉积气体和蚀刻气体一起扫描带电粒子束。 在常规方法中，不幸的是，沉积速率或选择比通常根据光学系统设置，扫描间隔，停留时间，循环时间，衬底等​​而降低。因此，提供了一种用于找到光学系统设置，驻留 时间和扫描间距。 发现这些参数是根据沉积速率或蚀刻速率的循环时间依赖性来实现带电粒子束的最佳扫描方法。 该沉积速率或蚀刻速率是预先存储于应进行成膜或选择性蚀刻的期望的照射区域的测量值。 该装置在显示装置上显示其判断结果。

公开(公告)号：US06627889B2

公开(公告)日：2003-09-30

申请号：US10152000

申请日：2002-05-22

申请人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

发明人： Isao Ochiai ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Muneyuki Fukuda ,  Mitsugu Sato ,  Tohru Ishitani

IPC分类号： G01N2300

CPC分类号： H01J37/256 ,  H01J2237/2561 ,  H01J2237/31745

摘要： An apparatus and method for observing a sample that is capable of making observations by irradiating an electron beam to a sample in the form of a thin film, and making elemental analysis accurately and with increased resolution while reducing background noise. A particular portion of the sample is observed by the electron beam by disposing a light element piece having a hole provided immediately behind the thin film sample. According to the present invention, it is possible to reduce the x-rays generated from portions other than the sample and electron beam incident on the sample after being scattered to portions other than the sample when observing the thin film sample by irradiating the electron beam. It is therefore possible to make secondary electron observation and elemental analysis with increased accuracy and sensitivity. Thus, an apparatus and a method for observing samples is provided that allows for the accurate and high-resolution internal observation of LSI devices.

摘要翻译： 一种用于观察能够通过以薄膜形式向样品照射电子束而进行观察的样品的装置和方法，并且在降低背景噪声的同时精确地并且以更高的分辨率进行元素分析。 通过设置具有设置在薄膜样品后面的孔的光元件片，通过电子束观察样品的特定部分。 根据本发明，通过照射电子束来观察薄膜样品时，可以减少在样品和入射到样品上的部分之后产生的X射线在散射到除了样品之外的部分之外的部分。 因此，可以以更高的精度和灵敏度进行二次电子观察和元素分析。 因此，提供了用于观察样本的装置和方法，其允许LSI器件的精确和高分辨率的内部观察。

公开(公告)号：US08618520B2

公开(公告)日：2013-12-31

申请号：US13547942

申请日：2012-07-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.