公开(公告)号：US10672977B2

公开(公告)日：2020-06-02

申请号：US14063204

申请日：2013-10-25

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/10 ,  H01L43/08

摘要： A perpendicular magnetoresistive element includes a novel recording layer being a multi-layer comprising a first Co-alloy layer including at least one of CoFeB, CoFeB/CoFe and CoFe/CoFeB, a second Co-alloy layer including at least one of CoFeB and CoB, an insertion layer provided between the first Co-alloy layer and the second Co-alloy layer and containing at least one element selected from Zr, Nb, W, Mo, Ru and having a thickness less than 0.5 nm, and a novel buffer layer having rocksalt crystal structure(s) interfacing to the recording layer with lattice parameter mismatch between 3% and 18%. The magnetoresistive element is annealed at an elevated temperature and both the first Co-alloy layer and the second Co-alloy layer are crystallized to form body-center cubic (bcc) CoFe or bcc Co grain having epitaxial growth with (100) plane parallel to substrate and with in-plane expansion and out-of-plane contraction.

公开(公告)号：US20160225982A1

公开(公告)日：2016-08-04

申请号：US14611083

申请日：2015-01-30

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/14 ,  H01L27/22 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08 ,  H01L43/12

摘要： A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

摘要翻译： 自旋转移 - 转矩磁阻存储器包括制造具有高导电性底部电极的三端子磁阻存储元件的装置和方法，其覆盖在MTJ堆叠外的区域中的SHE-金属层的顶部。 存储单元包括位于与多个磁阻存储元件中选定的磁阻存储元件相邻的位线，以在磁阻元件堆叠上提供读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部 并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。 因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

公开(公告)号：US09087983B2

公开(公告)日：2015-07-21

申请号：US14188699

申请日：2014-02-25

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： G11C11/00 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228

摘要： A STT-MRAM comprises apparatus and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of a three-terminal magnetoresistive memory element having a voltage-gated recording. A bit line is coupled to the memory element through an upper electrode provided on the top surface of a reference layer, a select CMOS is coupled to the recording layer of the memory element through a middle second electrode and a VIA and a digital line is coupled to a voltage gate which is insulated from the recording layer by a dielectric layer and is used to adjust the switching write current. The fabrication includes formation of bottom digital line, formation of memory cell & VIA connection, formation of top bit line. Dual photolithography patterning and hard mask etch are used to form a small memory pillar. Ion implantation is used to convert a buried dielectric VIA into an electrical conducting path between middle memory cell and underneath CMOS device.

摘要翻译： STT-MRAM包括制造自旋转矩磁阻存储器的装置和方法以及具有电压门控记录的多个三端子磁阻存储元件。 位线通过设置在参考层的顶表面上的上电极耦合到存储器元件，选择CMOS通过中间第二电极和VIA耦合到存储元件的记录层，数字线耦合 通过电介质层与记录层绝缘的电压门，并用于调节开关写入电流。 该制造包括形成底部数字线，形成存储单元和VIA连接，形成顶部位线。 双光刻图案和硬掩模蚀刻用于形成小的记忆柱。 离子注入用于将埋入的电介质VIA转换成中间存储器单元和CMOS器件之下的导电路径。

公开(公告)号：US09054301B2

公开(公告)日：2015-06-09

申请号：US14251576

申请日：2014-04-12

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  H01L27/222

摘要： A method to make magnetic random access memory (MRAM), or integrated device in general, is provided. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. To confine the oxygen ions within the desired region, heavy metals with large atomic number, such as Hf, Ta, W, Re, Os, Ir, Pt, Au is used as ion mask and bottom ion-stopping layer. An oxygen gettering material, selected from Mg, Zr, Y, Th, Ti, Al, Ba is added above and below the active device region to effectively capture the impinging oxygen. After a high temperature anneal, a buried metal oxide layer with sharp oxygen boundaries across the active device region can be obtained.

摘要翻译： 提供了一种制造磁性随机存取存储器（MRAM）或一般的集成器件的方法。 氧离子注入用于将光刻曝光区域转换为金属氧化物介质基质。 为了将氧离子限制在所需区域内，使用原子序数大的重金属如Hf，Ta，W，Re，Os，Ir，Pt，Au作为离子掩模和底部离子停止层。 选自Mg，Zr，Y，Th，Ti，Al，Ba的吸氧材料加入到有源器件区域上方和下方，以有效捕获入射氧。 在高温退火之后，可以获得在有源器件区域上具有尖锐氧边界的掩埋金属氧化物层。

公开(公告)号：US20140339661A1

公开(公告)日：2014-11-20

申请号：US14273501

申请日：2014-05-08

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/10 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L29/82 ,  H01L43/10

摘要： A method to make magnetic random access memory (MRAM), in particular, perpendicular spin transfer torque MRAM or p-STT-MRAM is provided. Electrically isolated memory cell is formed by ion implantation instead of etching and dielectric refill. Oxygen ion implantation is used to convert the photolithography exposed areas into metal oxide dielectric matrix. An ultra thin single-layer or multiple-layer of oxygen-getter, selected from Mg, Zr, Y, Th, Ti, Al, Ba is inserted into the active magnetic memory layer in addition to putting a thicker such material above and below the memory layer to effectively capture the impinged oxygen ions. Oxygen is further confined within the core device layer by adding oxygen stopping layer below the bottom oxygen-getter. After a high temperature anneal, a uniformly distributed and electrically insulated metal oxide dielectric is formed across the middle device layer outside the photolithography protected device area, thus forming MRAM cell without any physical deformation and damage at the device boundary.

摘要翻译： 提供了一种制造磁性随机存取存储器（MRAM）的方法，特别是垂直自旋转移转矩MRAM或p-STT-MRAM。 通过离子注入形成电隔离的存储单元，而不是蚀刻和介电填充。 氧离子注入用于将光刻曝光区域转换为金属氧化物介质基质。 从Mg，Zr，Y，Th，Ti，Al，Ba中选出的超薄单层或多层吸氧剂除了在上述和下方 记忆层，以有效捕获撞击的氧离子。 通过在底部吸氧剂下方加入氧气停止层，氧进一步局限在核心装置层内。 在高温退火之后，在光刻保护器件区域外的中间器件层上形成均匀分布且电绝缘的金属氧化物电介质，从而形成MRAM电池，在器件边界处没有任何物理变形和损伤。

公开(公告)号：US20140246741A1

公开(公告)日：2014-09-04

申请号：US14194742

申请日：2014-03-02

申请人： Yimin Guo

发明人： Yimin Guo

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A STT-MRAM comprises apparatus and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of a three-terminal magnetoresistive memory element having a voltage-gated recording. The first terminal, a bit line, is connected to the top magnetic reference layer, and the second terminal is located at the middle recording layer which is connected to the underneath select CMOS transistor through a VIA and the third one, a digital line, is a voltage gate with a narrow pillar underneath the memory layer across an insulating functional layer which is used to reduce the write current by manipulating the perpendicular anisotropy of the recording layer. The fabrication includes formation of a bottom electrode, formation of digital line, formation of memory cell & VIA connection and formation of the top bit line. Photolithography patterning and hard mask etch are used to form the digital line pillar and small memory pillar. Ion implantation is used to convert a buried dielectric layer outside the center memory pillar into an electric conductive path between middle recording layer and underneath CMOS transistor.

摘要翻译： STT-MRAM包括制造自旋转矩磁阻存储器的装置和方法以及具有电压门控记录的多个三端子磁阻存储元件。 第一端子，位线连接到顶部磁性参考层，并且第二端子位于通过VIA连接到下面的选择CMOS晶体管的中间记录层，第三端子是数字线路 在存储器层下方的具有窄柱的电压门，跨越绝缘功能层，其用于通过操纵记录层的垂直各向异性来减小写入电流。 该制造包括形成底部电极，形成数字线，存储单元的形成和VIA连接以及顶部位线的形成。 使用光刻图案和硬掩模蚀刻来形成数字线柱和小存储柱。 离子注入用于将中心存储柱外部的埋置介质层转换为中间记录层和CMOS晶体管之下的导电路径。

公开(公告)号：US08760819B1

公开(公告)日：2014-06-24

申请号：US12978145

申请日：2010-12-23

申请人： Feng Liu ,  Dehua Han ,  Ming Sun ,  Yimin Guo

发明人： Feng Liu ,  Dehua Han ,  Ming Sun ,  Yimin Guo

IPC分类号： G11B5/11 ,  G11B5/33

CPC分类号： G11B5/3912

摘要： A magnetic recording sensor for use in a data storage device is described. The sensor has a magnetoresistive sensing element and magnetic shields shielding the magnetoresistive sensing element. The magnetic shields include a first plated soft ferromagnetic layer, a second plated soft ferromagnetic layer, and an antiferromagnetic coupling (AFC) trilayer between the first plated soft ferromagnetic layer and the second plated soft ferromagnetic layer. The AFC trilayer includes a first AFC layer of sputtered ferromagnetic material; a second AFC layer of a nonmagnetic antiferromagnetic exchange material, and a third AFC layer of sputtered ferromagnetic material. Shields with AFC trilayers in bottom, side, and/or top shields, and well as between shields are provided. A method of fabricating is also provided.

摘要翻译： 描述了用于数据存储装置的磁记录传感器。 传感器具有磁阻感测元件和屏蔽磁阻感测元件的磁屏蔽。 磁屏蔽包括第一镀层软铁磁层，第二电镀软铁磁层和第一镀层软铁磁层与第二电镀软铁磁层之间的反铁磁耦合（AFC）三层。 AFC三层包括溅射铁磁材料的第一AFC层; 非磁性反铁磁交换材料的第二AFC层和溅射的铁磁材料的第三AFC层。 提供了在底部，侧面和/或顶部屏蔽以及屏蔽之间的AFC三层玻璃的屏蔽。 还提供了一种制造方法。

公开(公告)号：US08194366B1

公开(公告)日：2012-06-05

申请号：US12579315

申请日：2009-10-14

申请人： Shaoping Li ,  Yimin Guo ,  Feng Liu ,  Wei Zhang ,  Sining Mao

发明人： Shaoping Li ,  Yimin Guo ,  Feng Liu ,  Wei Zhang ,  Sining Mao

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  G01R33/098 ,  G11B5/3909 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.

摘要翻译： 公开了一种隧道磁阻（TMR）读头及其制造方法。 提供具有自由层条纹高度的自由层，自由层具有第一侧和第二侧。 隧道势垒层邻近自由层的第一侧形成，隧道势垒层具有第一侧和第二侧，隧道势垒层的第二面面向自由层的第一侧。 在隧道势垒层的第一侧附近形成钉扎层。 钉扎堆叠包括至少一个具有小于自由层条纹高度的电流路径条纹高度的磁性层。

公开(公告)号：US07619407B2

公开(公告)日：2009-11-17

申请号：US12082257

申请日：2008-04-10

申请人： Yimin Guo ,  Grace Gorman

发明人： Yimin Guo ,  Grace Gorman

IPC分类号： G01B7/30 ,  G01R33/09

CPC分类号： G01B7/30 ,  G01D5/147 ,  G01P3/488

摘要： The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. The sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.

摘要翻译： 本发明公开了一种适用于齿轮的旋转传感器。 MR（磁阻）传感器被放置在由至少两个永磁体产生的零场区域内。 传感器被分为浸没在不同的本地产生的磁环境中的两组。 在两组之间拍摄的差分信号然后感测到车轮的齿的运动。 还简要描述了用于制造该器件的单晶片方法。

公开(公告)号：US20090256552A1

公开(公告)日：2009-10-15

申请号：US12082257

申请日：2008-04-10

申请人： Yimin Guo ,  Grace Gorman

发明人： Yimin Guo ,  Grace Gorman

IPC分类号： G01B7/30

CPC分类号： G01B7/30 ,  G01D5/147 ,  G01P3/488

摘要： The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. Said sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.

摘要翻译： 本发明公开了一种适用于齿轮的旋转传感器。 MR（磁阻）传感器被放置在由至少两个永磁体产生的零场区域内。 所述传感器被分成浸没在不同的局部产生的磁环境中的两组。 在两组之间拍摄的差分信号然后感测到车轮的齿的运动。 还简要描述了用于制造该器件的单晶片方法。