公开(公告)号：US07910405B2

公开(公告)日：2011-03-22

申请号：US11761796

申请日：2007-06-12

申请人： Osamu Okada ,  Hiroyasu Jobetto

发明人： Osamu Okada ,  Hiroyasu Jobetto

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor constructing body provided on one side of a base member, and having a semiconductor substrate and a plurality of external connecting electrodes provided on the semiconductor substrate. An insulating layer is provided on the one side of the base member around the semiconductor constructing body. An adhesion increasing film is formed between the insulating layer, and at least one of the semiconductor constructing body and the base member around the semiconductor constructing body, for preventing peeling between the insulating layer and the at least one of the semiconductor constructing body and base member.

摘要翻译： 一种半导体器件包括至少一个半导体构造体，其设置在基底构件的一侧，并且具有半导体衬底和设置在半导体衬底上的多个外部连接电极。 绝缘层设置在半导体构造体周围的基底构件的一侧。 在绝缘层和半导体构造体周围的半导体构造体和基体构件中的至少一个之间形成粘合增加膜，用于防止绝缘层与半导体构造体和基底构件中的至少一个之间的剥离 。

公开(公告)号：US07820037B2

公开(公告)日：2010-10-26

申请号：US12274082

申请日：2008-11-19

申请人： Masataka Masuda ,  Shin-ichi Nagase ,  Susumu Takami ,  Osamu Okada

发明人： Masataka Masuda ,  Shin-ichi Nagase ,  Susumu Takami ,  Osamu Okada

IPC分类号： C10G45/06 ,  C07C5/02

CPC分类号： C07H19/06 ,  B01J20/0225 ,  B01J20/0229 ,  B01J20/0237 ,  B01J20/0244 ,  B01J20/06 ,  B01J20/3007 ,  B01J20/3078 ,  B01J20/3085 ,  C10G25/003 ,  C10L3/10

摘要： A desulfurizing agent is produced by mixing a copper compound, a zinc compound and an ammonium compound with an aqueous solution of an alkali substance to prepare or precipitate followed by calcitrating the resulting precipitate to form a calcined precipitate into a shape form of a copper oxide-zinc oxide-aluminum oxide mixture. The shaped form is impregnated with iron or nickel and calcined to produce a calcined oxide and reduced with hydrogen to form a sulfur-absorption desulfurizing agent.

摘要翻译： 通过将铜化合物，锌化合物和铵化合物与碱性物质的水溶液混合以制备或沉淀，然后将所得沉淀物煅烧，形成煅烧沉淀物形成氧化铜 - 氧化物形式，制备脱硫剂， 氧化锌 - 氧化铝混合物。 成形形式用铁或镍浸渍并煅烧以产生煅烧氧化物并用氢还原形成硫吸收脱硫剂。

公开(公告)号：US20100144095A1

公开(公告)日：2010-06-10

申请号：US12632006

申请日：2009-12-07

申请人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L21/50

CPC分类号： H01L21/6836 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03

摘要： First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

摘要翻译： 首先，形成在半导体晶片的一部分中的沟槽，密封膜等与切割街道及其两侧对应的沟槽。 在这种状态下，通过形成沟槽将半导体晶片分离成硅衬底。 然后，在包括沟槽的内部的每个硅衬底的底表面上形成树脂保护膜。 在这种情况下，将半导体晶片分离成硅基板。 然而，支撑板通过粘合剂层固定在柱状电极和密封膜的上表面上。 因此，当形成树脂保护膜时，可以防止包含分离的硅衬底的整体容易翘曲。

公开(公告)号：US20090308307A1

公开(公告)日：2009-12-17

申请号：US12373182

申请日：2007-07-09

申请人： Yoshiaki Hirose ,  Tetsuya Yuki ,  Teruhisa Kondo ,  Osamu Okada

发明人： Yoshiaki Hirose ,  Tetsuya Yuki ,  Teruhisa Kondo ,  Osamu Okada

IPC分类号： C30B15/12 ,  B32B9/00

CPC分类号： F27B14/10 ,  C30B15/10 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1024 ,  Y10T117/1052

摘要： A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly.In a crucible having an inner crucible 2 and an outer crucible 3, the crucible protection sheet is arranged between the two crucibles and is made of expanded graphite. The planar thermal conductivity is 120 W/(m·K) or higher, the gas permeability is less than 1.0×10−4 cm2/s, and the compression ratio is 20% or higher when the sheet is compressed in a thickness direction at a pressure of 34.3 MPa. Since the compression ratio is high, the effect of preventing breakage is great when inserting the inner crucible, improving workability and preventing the inner crucible from tilting inside the outer crucible. In addition, even though the compression ratio is high, the thermal conductivity is kept to such a degree that the inner crucible can be heated uniformly, and the gas shielding capability is also ensured. As a result, the outer crucible is prevented from silicon-carbidization and thickness decrease.

摘要翻译： 提供了可以防止内坩埚损坏的坩埚保护片，阻止外坩埚从硅碳化，并将热量从外坩埚均匀地传递到内坩埚。 在具有内坩埚2和外坩埚3的坩埚中，坩埚保护片布置在两个坩埚之间并且由膨胀石墨制成。 平面导热率为120W /（mK）以上，气体透过率小于1.0×10 -4 cm 2 / s，压缩比为20％以上时，在厚度方向压缩片材的压力为 34.3MPa。 由于压缩比高，所以在插入内坩埚时，防止破损的效果大，提高加工性，防止内坩埚在外坩埚内部倾斜。 此外，即使压缩比高，导热率也保持在内坩埚能均匀加热的程度，并且也保证了气体屏蔽能力。 结果，防止了外坩埚的硅 - 碳化和厚度的减小。

公开(公告)号：US20070232061A1

公开(公告)日：2007-10-04

申请号：US11761796

申请日：2007-06-12

申请人： Osamu Okada ,  Hiriyasu Jobetto

发明人： Osamu Okada ,  Hiriyasu Jobetto

IPC分类号： H01L21/4763

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes at least one semiconductor constructing body provided on one side of a base member, and having a semiconductor substrate and a plurality of external connecting electrodes provided on the semiconductor substrate. An insulating layer is provided on the one side of the base member around the semiconductor constructing body. An adhesion increasing film is formed between the insulating layer, and at least one of the semiconductor constructing body and the base member around the semiconductor constructing body, for preventing peeling between the insulating layer and the at least one of the semiconductor constructing body and base member.

摘要翻译： 一种半导体器件包括至少一个半导体构造体，其设置在基底构件的一侧，并且具有半导体衬底和设置在半导体衬底上的多个外部连接电极。 绝缘层设置在半导体构造体周围的基底构件的一侧。 在绝缘层和半导体构造体周围的半导体构造体和基体构件中的至少一个之间形成粘合增加膜，用于防止绝缘层与半导体构造体和基底构件中的至少一个之间的剥离 。

公开(公告)号：US20070228468A1

公开(公告)日：2007-10-04

申请号：US11729650

申请日：2007-03-29

申请人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

发明人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

IPC分类号： H01L27/12

CPC分类号： H01L29/78639 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/492 ,  H01L23/50 ,  H01L24/16 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/16225 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/10156 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599

摘要： A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a semiconductor substrate having one side face and the other side face opposite thereto, an insulating film formed thereon, an SOI integrated circuit provided thereon and including a plurality of connection pads, and electrodes for external connection each of which is connected to the corresponding connection pad. The semiconductor device has the external connection electrodes connected to the respective connection pads of the circuit substrate by a face-down bonding scheme. An under-filling material is provided between the semiconductor device and the circuit substrate, and there is provided a connection member which connects the other side face of the semiconductor device with the grounding wiring of the circuit substrate, and is made of a conductive material.

摘要翻译： 根据本发明的半导体器件的接地结构的电路基板具有多个连接焊盘和接地布线。 半导体器件具有一个半导体衬底，其具有一个侧面，另一个侧面与其相对，形成在其上的绝缘膜，设置在其上的SOI集成电路，并且包括多个连接焊盘，以及用于外部连接的电极， 相应的连接板。 半导体器件具有通过面向下接合方案连接到电路衬底的各个连接焊盘的外部连接电极。 在半导体器件和电路基板之间设置有填充不足的材料，并且设置有将半导体器件的另一个侧面与电路基板的接地布线连接的连接部件，并且由导电材料制成。

公开(公告)号：US06844292B1

公开(公告)日：2005-01-18

申请号：US10258094

申请日：2000-04-19

申请人： Osamu Okada ,  Mitsuaki Echigo

发明人： Osamu Okada ,  Mitsuaki Echigo

IPC分类号： B01J21/04 ,  B01J23/00 ,  B01J23/80 ,  B01J37/03 ,  B01J37/08 ,  B01J37/18 ,  C01B3/32 ,  B01J23/02

CPC分类号： C01B3/326 ,  B01J21/04 ,  B01J23/002 ,  B01J23/80 ,  B01J37/03 ,  B01J37/08 ,  B01J37/18 ,  B01J2523/00 ,  C01B2203/0233 ,  C01B2203/1076 ,  C01B2203/1223 ,  Y02P20/52 ,  B01J2523/17 ,  B01J2523/27 ,  B01J2523/31

摘要： In a method of manufacturing a copper-zinc-aluminum-based methanol reforming catalyst by coprecipitation, the methanol reforming catalyst is obtained by using a copper compound, a zinc compound and aluminum hydroxide, mixing them with an alkaline substance to produce a precipitate, calcining the precipitate obtained, and reducing the calcined product. Thus, a method is provided for manufacturing a highly active, highly heat resistant and durable methanol reforming catalyst which can be used for a long time even under reaction conditions of 300° C. and higher.

摘要翻译： 在通过共沉淀制造铜 - 锌 - 铝基甲醇重整催化剂的方法中，通过使用铜化合物，锌化合物和氢氧化铝获得甲醇重整催化剂，将其与碱性物质混合以产生沉淀，煅烧 得到沉淀物，还原煅烧产物。 因此，提供一种用于制造高活性，高耐热且耐用的甲醇重整催化剂的方法，即使在300℃以上的反应条件下也可长时间使用。

公开(公告)号：US5993764A

公开(公告)日：1999-11-30

申请号：US765151

申请日：1996-12-11

申请人： Takeshi Tabata ,  Mikako Kokitsu ,  Osamu Okada ,  Hirofumi Ohtsuka ,  Giuseppe Bellussi ,  Luigina Maria Flora Sabatino

发明人： Takeshi Tabata ,  Mikako Kokitsu ,  Osamu Okada ,  Hirofumi Ohtsuka ,  Giuseppe Bellussi ,  Luigina Maria Flora Sabatino

IPC分类号： B01D53/86 ,  B01D53/94 ,  B01J29/70 ,  B01J29/76 ,  B01D53/56

CPC分类号： B01J29/76 ,  B01D53/9418 ,  B01D2255/104 ,  B01D2255/2042 ,  B01D2255/2045 ,  B01D2255/2063 ,  B01D2255/2073 ,  B01D2255/20746 ,  B01D2255/20753 ,  B01D2255/50

摘要： The present invention provides a NOx reducing catalyst comprising BEA zeolite which is ion-exchanged with Co to have a Co/Al ratio between 0.2 and 0.6 and is loaded with at least one metal selected from among Ca, Sr, Ba, La, Mn, Ag, In, and Ni. The present invention also provides a NOx reduction process comprising the use of the catalyst of the present invention. The catalyst of this invention provides high activity, high NOx reduction selectivity and durability at low temperature in an actual exhaust gas containing water vapor and other substances disturbing catalytic activity even at low temperature and at low NOx and hydrocarbon concentration.

摘要翻译： PCT No.PCT / JP96 / 00978 Sec。 371日期1996年12月11日第 102（e）日期1996年12月11日PCT提交1996年4月10日PCT公布。 公开号WO96 / 33004 PCT 日本特开1996年10月24日本发明提供了含有与Co进行离子交换的BEA沸石的NO x还原催化剂，Co / Al比为0.2〜0.6，并加载了选自Ca，Sr，Ba ，La，Mn，Ag，In和Ni。 本发明还提供了使用本发明的催化剂的NOx还原方法。 本发明的催化剂在含有水蒸气和其它物质的实际排气中在低温下提供高活性，高NOx还原选择性和耐久性，即使在低温和低NOx和烃浓度下也能干扰催化活性。

公开(公告)号：US5980833A

公开(公告)日：1999-11-09

申请号：US883785

申请日：1997-06-27

申请人： Katsuki Higaki ,  Shuzo Kudo ,  Hisao Ohnishi ,  Soichi Tabata ,  Osamu Okada ,  Yosuke Nagasawa

发明人： Katsuki Higaki ,  Shuzo Kudo ,  Hisao Ohnishi ,  Soichi Tabata ,  Osamu Okada ,  Yosuke Nagasawa

IPC分类号： G01N27/12 ,  G01N33/00 ,  G01N29/00

CPC分类号： G01N27/12 ,  G01N33/004 ,  G01N2291/02863 ,  Y10S428/902 ,  Y10T436/205831 ,  Y10T436/208339 ,  Y10T436/23

摘要： A carbon monoxide sensor including a gas detecting portion and at least a pair of electrodes, wherein the gas detecting portion includes a metal oxide represented by a following formula;Cu.sub.1-x Bi.sub.x O.sub.y(0

摘要翻译： 一种一氧化碳传感器，包括气体检测部分和至少一对电极，其中气体检测部分包括由下式表示的金属氧化物; Cu1-xBixOy（0

公开(公告)号：US5618496A

公开(公告)日：1997-04-08

申请号：US406097

申请日：1995-03-16

申请人： Kazuhisa Hasumi ,  Kentaro Nagano ,  Shuuichi Kamiyama ,  Hiroaki Yanagida ,  Osamu Okada

发明人： Kazuhisa Hasumi ,  Kentaro Nagano ,  Shuuichi Kamiyama ,  Hiroaki Yanagida ,  Osamu Okada

IPC分类号： G01N27/00 ,  G01N27/12

CPC分类号： G01N27/12

摘要： P-type semiconductor 15 and n-type semiconductor 16 are formed as thick films or spray-coated onto electrodes 13 and 14 on top of substrates 11 and 12, with films of p-type semiconductor 15 and n-type semiconductor 16 being formed in such manner that they are in mutual contact. If a gas to be detected is introduced to the contact region while a bias voltage is being applied between the two electrodes, an output will be obtained in accordance with the concentration of flammable gas components in the gas being detected. In addition, if a film is formed from a material comprising a mixture of particles of p-type semiconductor and particles of n-type semiconductor, the bias voltage can be an AC voltage.

摘要翻译： P型半导体15和n型半导体16形成为厚膜或喷涂在基板11和12的顶部上的电极13和14上，其中p型半导体15和n型半导体16的膜形成在 使他们相互接触。 如果在两个电极之间施加偏置电压时将要检测的气体引入接触区域，则将根据被检测气体中的可燃气体成分的浓度获得输出。 此外，如果由包含p型半导体颗粒和n型半导体颗粒的混合物的材料形成膜，偏压可以是AC电压。