公开(公告)号：US20050019697A1

公开(公告)日：2005-01-27

申请号：US10626355

申请日：2003-07-24

申请人： Daniel Tang ,  Jiong Chen

发明人： Daniel Tang ,  Jiong Chen

IPC分类号： G03F7/00 ,  G03F7/40

CPC分类号： G03F7/40

摘要： A photoresist layer is preprocessed by carrying out an ion beam implantation onto a patterned photoresist layer with conductive ions. The conductive ions may comprise ions of carbon, SB, indium, silicon, or other metallic/semiconductor atoms/molecules. The ion implantation is carried out by applying ion beams of energy lower than 1000 ev such that the pre-process implantation would not cause any alterations to the profile or layer structure of the photoresist layer. In order to assure sufficient conductivity is achieved in the photoresist layer, it is desirable that a high dose of implanting ion beam is used, preferable having a ion dosage in a range of 1016/cm2 to 1018/cm2. A large quantity of resist out-gassing would occur during the high dose implants. Wafers with resist patterns can thus be subject to electron beam inspections without the problems of electric charging and photoresist out-gassing.

摘要翻译： 通过将离子束注入到具有导电离子的图案化光致抗蚀剂层上来预处理光致抗蚀剂层。 导电离子可以包括碳，SB，铟，硅或其他金属/半导体原子/分子的离子。 通过施加低于1000ev的能量离子束来进行离子注入，使得预处理注入不会对光致抗蚀剂层的轮廓或层结构造成任何改变。 为了确保在光致抗蚀剂层中获得足够的导电性，期望使用高剂量的注入离子束，优选离子剂量在10 16 / cm 2至10 18范围内 / cm 2。 在大剂量植入物期间会发生大量的抗氧化剂排出气体。 因此，具有抗蚀剂图案的晶片可以进行电子束检查，而没有充电和光致抗蚀剂排气的问题。